AO4614 [AOS]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AO4614 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4614
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
VDS (V) = 40V
ID = 6A (VGS=10V)
RDS(ON)
The AO4614 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard Product AO4614
is Pb-free (meets ROHS & Sony 259
specifications). AO4614L is a Green
Product ordering option. AO4614 and
AO4614L are electrically identical.
p-channel
-40V
-5A (VGS = -10V)
RDS(ON)
< 31mΩ (VGS=10V)
< 45mΩ (VGS=4.5V)
< 45mΩ (VGS = -10V)
< 63mΩ (VGS = -4.5V)
D1
D2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
S1
S2
SOIC-8
p-channel
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
40
-40
V
V
VGS
±20
±20
TA=25°C
TA=70°C
6
-5
Continuous Drain
Current A
Pulsed Drain Current B
A
ID
5
20
-4
-20
IDM
TA=25°C
TA=70°C
2
2
PD
W
Power Dissipation
1.28
-55 to 150
1.28
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Typ
48
74
35
48
74
35
Max Units
62.5 °C/W
110 °C/W
50 °C/W
62.5 °C/W
110 °C/W
50 °C/W
Maximum Junction-to-Ambient A
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
RθJL
RθJA
RθJL
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Alpha & Omega Semiconductor, Ltd.
AO4614
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
VDS=32V, VGS=0V
40
V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS= ±20V
DS=VGS ID=250µA
GS=10V, VDS=5V
GS=10V, ID=6A
±100
3
nA
V
VGS(th)
ID(ON)
1
2.3
20
A
23.2
36
31
48
45
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
DS=5V, ID=6A
IS=1A,VGS=0V
32.6
22
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
S
V
A
0.77
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
404
95
pF
pF
pF
Ω
V
GS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
37
VGS=0V, VDS=0V, f=1MHz
2.7
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.3
4.2
1.3
2.3
4.2
3.3
15.6
3
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=10V, VDS=20V, ID=6A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=20V, RL=3.3Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=6A, dI/dt=100A/µs
IF=6A, dI/dt=100A/µs
20.5
14.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4614
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
25
20
15
10
5
20
15
10
5
10V
5V
VDS=5V
4.5V
4V
125°C
VGS=3.5V
25°C
0
0
0
1
2
3
DS (Volts)
4
5
2
2.5
3
3.5
GS(Volts)
4
4.5
V
V
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
50
40
30
20
1.8
1.6
1.4
1.2
1
VGS=10V
ID=6A
VGS=4.5V
VGS=4.5V
ID=5A
VGS=10V
0
5
10
15
20
0.8
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=6A
70
60
50
40
30
20
10
125°C
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4614
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
8
800
600
400
200
0
VDS=20V
ID= 6A
Ciss
6
4
Coss
Crss
2
0
0
10
20
DS (Volts)
30
40
0
2
4
6
8
10
V
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10µs
30
20
10
0
100µs
10ms
1ms
1s
10s
0.1s
10
TJ(Max)=150°C
TA=25°C
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4614
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-10mA, VGS=0V
VDS=-32V, VGS=0V
-40
V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS=±20V
DS=VGS ID=-250µA
GS=-10V, VDS=-5V
GS=-10V, ID=-5A
±100
-3
nA
V
VGS(th)
ID(ON)
-1
-1.9
-20
A
34.7
52
45
65
63
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2A
50.6
12
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-4.8A
IS=-1A,VGS=0V
S
V
A
-0.75
-1
Maximum Body-Diode Continuous Current
-3.2
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
657
143
63
pF
pF
pF
Ω
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
6.5
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
13.6
6.8
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=-10V, VDS=-20V, ID=-5A
Qgs
Qgd
tD(on)
tr
1.8
3.9
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.5
VGS=-10V, VDS=-20V, RL=4Ω,
6.7
ns
RGEN=3Ω
tD(off)
tf
26
ns
11.2
22.3
15.2
ns
trr
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any givenapplicationdependsontheuser'sspecificboarddesign.Thecurrentratingisbasedonthet≤10sthermal resistancerating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4614
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
25
20
15
10
5
30
25
20
15
10
5
-5V
-6V
-10V
VDS=-5V
-4.5V
-4V
-3.5V
125°C
25°C
VGS=-3V
0
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
4.5
5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
60
55
50
45
40
35
30
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-5A
VGS=-4.5V
VGS=-4.5V
ID=-4A
VGS=-10V
0.8
0
2
4
6
8
10
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
160
140
120
100
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-5
125°C
125°C
60
25°C
0.6
40
25°C
20
2
3
4
5
6
7
8
9
10
-VGS (Volts)
0.0
0.2
0.4
0.8
1.0
Figure 5: On-Resistance vs. Gate-Source Voltage
-VSD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4614
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1000
800
600
400
200
0
VDS=-20V
ID=-5A
8
Ciss
6
4
Coss
Crss
2
0
0
5
10
15
0
10
20
-VDS (Volts)
30
40
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C, TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1s
DC
1s
10s
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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