AAT8543 [ANALOGICTECH]
20V P-Channel Power MOSFET; 20V P沟道功率MOSFET
| 型号： | AAT8543 |
| 厂家： | 
ADVANCED ANALOGIC TECHNOLOGIES |
| 描述： | 20V P-Channel Power MOSFET |
| 文件： | 总6页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AAT8543
20V P-Channel Power MOSFET
General Description
Features
The AAT8543 is a low threshold P-channel MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTech's ultra-high-density MOS-
FET process and space-saving, small-outline, J-lead
package, performance superior to that normally
found in a TSOP-6 footprint has been squeezed into
the footprint of an SC70JW-8 package.
•
•
Drain-Source Voltage (max): -20V
Continuous Drain Current1 (max):
-4.2A @ 25°C
Low On-Resistance:
— 57mΩ @ VGS = -4.5V
— 104mΩ @ VGS = -2.5V
•
SC70JW-8 Package
Applications
Top View
•
•
•
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
D
8
D
D
D
5
7
6
Absolute Maximum Ratings
TA = 25°C, unless otherwise noted.
1
2
3
4
S
S
S
G
Symbol
Description
Value
Units
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
-20
±12
V
TA = 25°C
TA = 70°C
±4.2
ID
Continuous Drain Current @ TJ = 150°C1
±3.3
A
IDM
IS
Pulsed Drain Current2
±20
Continuous Source Current (Source-Drain Diode)1
Operating Junction Temperature Range
Storage Temperature Range
-1.2
TJ
-55 to 150
-55 to 150
°C
°C
TSTG
Thermal Characteristics1
Symbol
Description
Typ
Max
Units
RθJA
RθJA2
RθJF
Typical Junction-to-Ambient Steady State
Maximum Junction-to-Ambient t<5 Seconds
Typical Junction-to-Foot
100
62
124
76
°C/W
°C/W
°C/W
35
42
TA = 25°C
Maximum Power Dissipation
TA = 70°C
1.6
1.0
PD
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; howev-
er, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
8543.2005.04.1.0
1
AAT8543
20V P-Channel Power MOSFET
Electrical Characteristics
TJ = 25°C, unless otherwise noted.
Symbol Description
DC Characteristics
Conditions
Min Typ Max Units
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0V, ID = -250µA
-20
V
VGS = -4.5V, ID = -4.2A
VGS = -2.5V, ID = -3.1A
VGS = -4.5V, VDS = -5V (pulsed)
VGS = VDS, ID = -250µA
VGS = ±12V, VDS = 0V
45
80
57
RDS(ON) Drain-Source On-Resistance1
mΩ
104
ID(ON)
VGS(th)
IGSS
On-State Drain Current1
Gate Threshold Voltage
Gate-Body Leakage Current
-20
A
V
-0.6
±100
-1
nA
V
GS = 0V, VDS = -20V
IDSS
Drain Source Leakage Current
Forward Transconductance1
µA
S
VGS = 0V, VDS = -16V, TJ = 70°C2
-5
gfs
VDS = -5V, ID = -4.2A
7
Dynamic Characteristics2
QG
QGS
QGD
tD(ON)
tR
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay
VDS = -10V, RD = 2.4Ω, VGS = -4.5V
VDS = -10V, RD = 2.4Ω, VGS = -4.5V
VDS = -10V, RD = 2.4Ω, VGS = -4.5V
VDS = -10V, RD = 2.4Ω, VGS = -4.5V, RG = 6Ω
VDS = -10V, RD = 2.4Ω, VGS = -4.5V, RG = 6Ω
VDS = -10V, RD = 2.4Ω, VGS = -4.5V, RG = 6Ω
VDS = -10V, RD = 2.4Ω, VGS = -4.5V, RG = 6Ω
8.5
1.5
2.8
10
nC
ns
Turn-On Rise Time
Turn-Off Delay
32
tD(OFF)
tF
61
Turn-Off Fall Time
38
Source-Drain Diode Characteristics
VSD
Source-Drain Forward
Voltage1
Continuous Diode Current3
VGS = 0, IS = -4.2A
-1.3
-1.2
V
A
IS
1. Pulse test: Pulse Width = 300µs.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2
8543.2005.04.1.0
AAT8543
20V P-Channel Power MOSFET
Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Output Characteristics
Transfer Characteristics
20
15
10
5
5V
4.5V
4V
20
3.5V
VD = VG
-55°C
25°C
3V
15
10
5
125°C
2.5V
2V
1.5V
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
VGS (V)
VDS (V)
On-Resistance vs. Drain Current
On-Resistance vs. Gate-to-Source Voltage
0.25
0.4
0.32
0.24
0.16
0.08
0
ID = 4.2A
0.2
0.15
0.1
VGS = 2.5V
0.05
0
VGS = 4.5V
0
5
10
15
20
0
1
2
3
4
5
ID (A)
VGS (V)
On-Resistance vs. Junction Temperature
Threshold Voltage
1.6
0.5
0.4
0.3
0.2
0.1
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGS = 4.5V
ID = 4.2A
ID = 250µA
-0.1
-0.2
-0.3
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
TJ (°°C)
TJ (ºC)
8543.2005.04.1.0
3
AAT8543
20V P-Channel Power MOSFET
Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Source-Drain Diode Forward Voltage
Gate Charge
100
5
VD = 10V
ID = 4.2A
4
10
3
2
1
0
TJ = 150°C
TJ = 25°C
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
2
4
6
8
10
VSD (V)
QG, Charge (nC)
Capacitance
Single Pulse Power, Junction to Ambient
50
45
40
35
30
25
20
15
10
5
1000
800
600
400
200
0
Ciss
Coss
Crss
0
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
VDS (V)
Time (s)
Transient Thermal Response, Junction to Ambient
10
1
.5
.2
0.1
.1
.05
.02
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Time (s)
4
8543.2005.04.1.0
AAT8543
20V P-Channel Power MOSFET
Ordering Information
Package
Marking1
Part Number (Tape and Reel)2
AAT8543IJS-T1
SC70JW-8
JTXYY
Package Information
SC70JW-8
0.50 BSC 0.50 BSC 0.50 BSC
0.225 0.075
2.00 0.20
0.048REF
0.100
0.45 0.10
4° 4°
7° 3°
2.10 0.30
All dimensions in millimeters.
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in BOLD.
8543.2005.04.1.0
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AAT8543
20V P-Channel Power MOSFET
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
6
8543.2005.04.1.0
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