AAT8641-S5 [AAT]
ONE-CELL LI-ION BATTERY PROTECTION IC; 单节锂离子电池保护IC
| 型号： | AAT8641-S5 |
| 厂家： | 
ADVANCED ANALOG TECHNOLOGY, INC. |
| 描述： | ONE-CELL LI-ION BATTERY PROTECTION IC |
| 文件： | 总25页 (文件大小：626K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Analog Technology, Inc.
Product information presented is current as of publication date. Details are subject to change without notice
ONE-CELL LI-ION BATTERY PROTECTION IC
FEATURES
GENERAL DESCRIPTION
z Ideal for One-Cell Rechargeable Li-Ion
The AAT8641 series are designed for the
protection of one-cell rechargeable Li-Ion battery
pack against over charge, over discharge, over
current and short circuit. They use CMOS
process to provide high accuracy voltage
detection while consuming relatively low amount
of current.
Battery Packs
z High Accuracy Voltage Detection
z Low Current Consumption:
3μA Supply Current (Typical)
0.1μA Shutdown Current
z 3-Level Over Current Detection:
Over-Current Level 1 /Over Current Level 2
/ Short Circuit
Each of the AAT8641 devices incorporates
voltage comparators, bandgap reference voltage
generator, signal delay circuit, short circuit
detector, and digital control circuit.
z Wide Operating Temperature Range:
o
− 40 C to +85 oC
z Small SOT25 Package
During the charge process, when the battery
voltage is charged to a value higher than VC1
(Over Charge Threshold Voltage), the output of
Cout pin switches to low level, i.e., the VN pin
PIN CONFIGURATION
level. The output of Cout pin will switch to high
level when the battery voltage is at a level lower
than VC2 (Over Charge Release Voltage), or
TOP VIEW
when the charger is disconnected from the battery
pack and the battery voltage level is in between
VC1 and VC2 .
COUT
VN
During the discharge process, when the battery
voltage drops to a value lower than VD1 (Over
Discharge Threshold Voltage), the output of
Dout pin switches to low level immediately after
GND
DOUT
the internal delay time elapses. The output of
Dout pin will switch to high level when the
battery voltage is at a level higher than VD2
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Advanced Analog Technology, Inc.
(Over-Discharge Release Voltage).
exactly the same as discharge current. If the short
Over Current Level 1 Voltage ( VOC1 ) is used to
circuit current is high enough to cause VN pin
voltage to be greater thanV
, the output of
short
monitor the amount of discharge current. If the
Dout pin would fall to low level after a delay
time t , and the output of Dout level will
discharge current is high enough to cause VN pin
voltage to be greater than VOC1 , the output of
short
Dout pin will switch to low level after a delay
change to high when the load is removed from
battery pack.
time tOC1. If the load is removed from battery
pack, the output of Dout will change to high
again.
The mechanism of short circuit protection is
BLOCK DIAGRAM:
Dout
Cout
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PIN DESCRIPTION
PIN NO NAME I/O
DESCRIPTION
1
2
VN
VDD
I
I
Voltage Detection Pin Between VN and GND
Power Supply Input Pin
3
4
GND
Dout
Ground
O
O
Discharge Control Pin which Connects to External MOSFET Gate
5
Charge Control Pin which Connects to External MOSFET Gate.
Cout
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
SYMBOL
VALUE
UNIT
VDD
−0.3 to 8.0
Supply Voltage
V
VDD − 20.0 to VDD + 0.3
VN Pin Input Voltage
V
VVN
VDout
VCout
Pd
Dout Pin Output Voltage
Cout Pin Output Voltage
Power Dissipation
−0.3 to VDD + 0.3
VVN − 0.3 to VDD + 0.3
150
V
V
mW
oC
oC
TC
−40 to +85
Operating Temperature Range
Storage Temperature Range
Tstorage
−40 to +125
RECOMMENDED OPERATING CONDITIONS
Test condition
Min
Max
Unit
Voltage Defined as VDD
Supply Voltage, VDD
1.5
7.0
V
to GND
VDD
VDD
Dout Output Voltage
GND
VN
V
V
C
out Output Voltage
OPERATION VOLTAGE AND OPERATION CURRENT
Parameter
Supply Current at Normal Operation
Mode
Test Condition
Min
Typ
3.0
-
Max
5.0
Unit
μA
VDD =3.3V; VN=0V; GND=0V
μA
Standby Current at Power Down Mode
-
0.1
Operation Voltage between VDD and
VN
1.5
20.0
V
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AAT8641A DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Min
Typ
Max
Unit
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.300
4.325
4.350
V
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC2
VD1
VC1 − 0.30 VC1 − 0.25 VC1 − 0.20
2.420 2.500 2.580
VD1+0.3 VD1+0.4 VD1+0.5
Over Charge Release Voltage
V
V
Over Discharge Threshold
Voltage
VD2
tC1
Over Discharge Release Voltage
Over Charge Delay Time
V
s
VDD = 3.6V to 4.5V
0.700
87.5
1.000
125.0
1.300
162.5
tD1
VDD = 3.6V to 2.4V
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with
Over Current Level 1 Detection
Voltage
VOC1
130
400
150
500
170
600
mV
tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
mV
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay
Time)
VDD −1.3
VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage (when VD1＜VDD
＜
VD2)
Cout High Level Resistance
Cout Low Level Resistance
RCOH
RCOL
R DOH
VDD =3.5V; Cout =3.0V;VN=0V
VDD =4.5V;
1
2
10
kΩ
kΩ
kΩ
150
2.5
602
5.0
2,380
10.0
High Level Resistance
Dout
VDD =3.5V;
VDD =1.8V;
=3.0V;VN=0V
Dout
Dout Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
=0.5V;VN=1.8V
Dout
Internal Resistance between VN
and VDD
RVND
RVNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
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– Advanced Analog Technology, Inc. –
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AAT8641B DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN TYP MAX
UNIT
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.325
VC1-0.25 VC1-0.20 VC1-0.15
2.220 2.300 2.380
VD1+0.6 VD1+0.7 VD1+0.8
4.350
4.375
V
VC2
VD1
VD2
Over Charge Release Voltage
V
V
V
Over Discharge Threshold
Voltage
Over Discharge Release Voltage
VDD = 3.6V to 4.5V
tC1
tD1
Over Charge Delay Time
0.088
22.4
0.125
32.0
0.163
41.6
s
VDD = 3.6V to 2.2V
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with
Over Current Level 1 Detection
Voltage
VOC1
130
400
150
500
170
600
mV
mV
tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage
( Dout Response with tshort Delay
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Time)
Over Current Level 1 Detection
Delay Time
VDD = 3.0V
tOC1
tOC2
tshort
VCHR
2.8
4.0
5.2
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage (when VD1＜VDD
＜
VD2)
Cout High Level Resistance
Cout Low Level Resistance
RCOH
RCOL
R DOH
VDD =3.5V; Cout =3.0V;VN=0V
VDD =4.5V; Cout =0.5V;VN=0V
VDD 3.5V; Dout =3.0V;VN=0V
1
2
10
kΩ
kΩ
kΩ
150
2.5
602
5.0
2,380
10.0
High Level Resistance
Dout
VDD =1.8V;
Low Level Resistance
Dout
R DOL
2.5
5.0
10.0
kΩ
Dout =0.5V;VN=1.8V
Internal Resistance between VN
and VDD
RVND
RVNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
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– Advanced Analog Technology, Inc. –
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AAT8641C DETECTION VOLTAGE AND DEALY TIME(25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN TYP MAX
UNIT
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.275
4.300
4.325
V
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.25 VC1-0.20 VC1-0.15
V
V
V
Over Discharge Threshold
Voltage
2.220
2.300
VD1
2.380
Over Discharge Release Voltage
VD1-0.08
VD1+0.08
VDD = 3.6V to 4.5V
tC1
tD1
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
VDD = 3.6V to 2.2V
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with
Over Current Level 1 Detection
Voltage
VOC1
80
100
480
120
600
mV
mV
tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
400
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage
( Dout Response with tshort Delay
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Time)
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage (when VD1＜VDD
＜
VD2)
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
RCOH
RCOL
R DOH
VDD =3.5V; Cout =3.0V;VN=0V
VDD =4.5V; Cout =0.5V;VN=0V
VDD =3.5V; Dout =3.0V;VN=0V
1
2
10
kΩ
kΩ
kΩ
150
2.5
602
5.0
2,380
10.0
VDD =1.8V;
Dout Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Dout =0.5V;VN=1.8V
Internal Resistance between VN
and VDD
RVND
RVNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
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AAT8641D DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX UNIT
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.255
4.280
4.305
V
V
V
V
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.25 VC1-0.20 VC1-0.15
Over Discharge Threshold
Voltage
2.201
2.281
VD1
2.361
Over Discharge Release Voltage
VD1-0.08
VD1+0.08
VDD = 3.6V to 4.5V
tC1
tD1
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
VDD = 3.6V to 2.2V
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with
Over Current Level 1 Detection
Voltage
VOC1
110
400
130
490
150
600
mV
mV
tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response with
Over Current Level 2 Detection
Voltage
VOC2
tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay Time)
VDD −1.3
VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
10
50
μs
VDD = 3.0V
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage (when VD1＜VDD
＜
VD2)
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
RCOH
RCOL
R DOH
VDD =3.5V; Cout =3.0V;VN=0V
VDD =4.5V; Cout =0.5V;VN=0V
VDD =3.5V; Dout =3.0V;VN=0V
1
2
10
kΩ
kΩ
kΩ
150
2.5
602
5.0
2,380
10.0
VDD =1.8V;
Dout Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Dout =0.5V;VN=1.8V
Internal Resistance between VN
and VDD
RVND
RVNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 7 of 25
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Advanced Analog Technology, Inc.
AAT8641E DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
TEST CONDITION
SYMBOL
MIN
TYP MAX
UNIT
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.255
4.280
4.305
V
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.25 VC1-0.20 VC1-0.15
2.201 2.281 2.361
VD1+0.5 VD1+0.6 VD1+0.7
V
V
V
Over Discharge Threshold
Voltage
Over Discharge Release Voltage
VDD = 3.6V to 4.5V
tC1
tD1
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
VDD = 3.6V to 2.2V
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response
Over Current Level 1 Detection
Voltage
VOC1
80
100
480
120
600
mV
mV
with tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response with
Over Current Level 2 Detection
Voltage
VOC2
400
tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay Time)
VDD −1.3
VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
tOC2
Short Circuit Detection Delay
Time
μs
tshort
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout ” Pin
Voltage (when VD1＜VDD＜VD2)
VDD =3.5V; Cout =3.0V;VN=0V
VCHR
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
RCOH
RCOL
R DOH
1
2
10
kΩ
kΩ
kΩ
VDD =4.5V; Cout =0.5V;VN=0V
VDD =3.5V; Dout =3.0V;VN=0V
150
2.5
602
5.0
2,380
10.0
VDD =1.8V;
Dout Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Dout =0.5V;VN=1.8V
Internal Resistance between VN
and VDD
RVND
RVNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 8 of 25
V2.0
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AAT8641F DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP MAX
UNIT
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.300
4.325
4.350
V
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.30 VC1-0.25 VC1-0.20
2.420 2.500 2.580
VD1+0.3 VD1+0.4 VD1+0.5
V
V
V
Over Discharge Threshold
Voltage
Over Discharge Release Voltage
VDD = 3.6V to 4.5V
tC1
tD1
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
VDD = 3.6V to 2.4V
Over Discharge Delay Time
ms
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 1 Detection
Voltage
VOC1
80
100
480
120
600
mV
mV
with tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
400
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising
Edge of “VN” Pin Voltage
( Dout Response with tshort
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Delay Time)
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage (when VD1＜VDD
＜VD2)
VDD =3.5V;
VDD =4.5V;
VDD =3.5V;
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
RCOH
RCOL
R DOH
1
2
10
kΩ
kΩ
kΩ
150
2.5
602
5.0
2,380
10.0
VDD =1.8V;
Dout Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Dout =0.5V;VN=1.8V
Internal Resistance between VN
and VDD
RVND
RVNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
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V2.0
Advanced Analog Technology, Inc.
AAT8641G DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP MAX
UNIT
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.325
4.350
4.375
V
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.25 VC1-0.20 VC1-0.15
2.220 2.300 2.380
VD1+0.6 VD1+0.7 VD1+0.8
V
V
V
Over Discharge Threshold
Voltage
Over Discharge Release Voltage
VDD = 3.6V to 4.5V
tC1
tD1
Over Charge Delay Time
0.088
22.4
0.125
32.0
0.163
41.6
s
VDD = 3.6V to 2.2V
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with
Over Current Level 1 Detection
Voltage
VOC1
180
400
200
510
220
600
mV
mV
tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay Time)
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
2.8
4.0
5.2
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage (when VD1＜VDD
＜
VD2)
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
RCOH
RCOL
R DOH
VDD =3.5V; Cout =3.0V;VN=0V
VDD =4.5V; Cout =0.5V;VN=0V
VDD =3.5V; Dout =3.0V;VN=0V
1
2
10
kΩ
kΩ
kΩ
150
2.5
602
5.0
2,380
10.0
VDD =1.8V;
Dout Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Dout =0.5V;VN=1.8V
Internal Resistance between VN
and VDD
RVND
RVNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 10 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641H DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP MAX
UNIT
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.275
4.300
4.325
V
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.25 VC1-0.20 VC1-0.15
V
V
V
Over Discharge Threshold
Voltage
2.220
2.300
VD1
2.380
Over Discharge Release Voltage
VD1-0.08
VD1+0.08
VDD = 3.6V to 4.5V
tC1
tD1
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
VDD = 3.6V to 2.2V
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with
Over Current Level 1 Detection
Voltage
VOC1
130
400
150
500
170
600
mV
mV
tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay Time)
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage (when VD1＜VDD
VD2)
＜
VDD =3.5V; Cout =3.0V;
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
RCOH
RCOL
R DOH
1
2
10
kΩ
kΩ
kΩ
VDD =4.5V; Cout =0.5V;
VDD =3.5V; Dout =3.0V;
150
2.5
602
5.0
2,380
10.0
VDD =1.8V; Dout =0.5V;
VN=1.8V
Dout Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
RVND
RVNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 11 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641I DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP MAX
UNIT
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.275
4.300
4.325
V
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1 − 0.20 VC1 − 0.15
VC2
VD1
VD2
VC1 − 0.25
Over Charge Release Voltage
V
V
V
Over Discharge Threshold
Voltage
2.220
2.300
VD1
2.380
VD1 − 0.08
Over Discharge Release Voltage
VD1+0.08
tC1
tD1
VDD = 3.6V to 4.5V
VDD = 3.6V to 2.2V
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with
Over Current Level 1 Detection
Voltage
VOC1
110
400
130
490
150
600
mV
mV
tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay Time)
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage (when VD1＜VDD
＜
VD2)
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
RCOH
RCOL
R DOH
VDD =3.5V; Cout =3.0V;VN=0V
VDD =4.5V; Cout =0.5V;VN=0V
VDD =3.5V; Dout =3.0V;VN=0V
1
2
10
kΩ
kΩ
kΩ
150
2.5
602
5.0
2,380
10.0
VDD =1.8V;
Dout Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Dout =0.5V;VN=1.8V
Internal Resistance between VN
and VDD
RVND
RVNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 12 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641J DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP MAX
UNIT
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.255
4.280
4.305
V
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1 − 0.20 VC1 − 0.15
VC2
VD1
VD2
VC1 − 0.25
Over Charge Release Voltage
V
V
V
Over Discharge Threshold
Voltage
2.201
2.281
VD1
2.361
VD1 − 0.08
Over Discharge Release Voltage
VD1+0.08
VDD = 3.6V to 4.5V
tC1
tD1
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
VDD = 3.6V to 2.2V
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with
Over Current Level 1 Detection
Voltage
VOC1
180
400
200
510
220
600
mV
mV
tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay Time)
VDD = 3.0V
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage (when VD1＜VDD
＜
VD2)
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
RCOH
RCOL
R DOH
VDD =3.5V; Cout =3.0V;VN=0V
VDD =4.5V; Cout =0.5V;VN=0V
VDD =3.5V; Dout =3.0V;VN=0V
1
2
10
kΩ
kΩ
kΩ
150
2.5
602
5.0
2,380
10.0
VDD =1.8V;
Dout Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Dout =0.5V;VN=1.8V
Internal Resistance between VN
and VDD
RVND
RVNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 13 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8641K DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.225
4.250
4.275
V
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC2
VD1
VD2
Over Charge Release Voltage
Over Discharge Threshold Voltage
Over Discharge Release Voltage
VC1-0.25 VC1-0.20 VC1-0.15
2.201 2.281 2.361
VD1+0.5 VD1+0.6 VD1+0.7
V
V
V
VDD = 3.6V to 4.5V
tC1
tD1
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
to 2.2V
VDD = 2.8V
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response
Over Current Level 1 Detection
Voltage
VOC1
80
100
480
120
600
mV
mV
with tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
400
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay Time)
VDD −1.3
VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage (when VD1＜VDD
＜
VD2)
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
RCOH
RCOL
R DOH
VDD =3.5V; Cout =3.0V;VN=0V
VDD =4.5V; Cout =0.5V;VN=0V
VDD =3.5V; Dout =3.0V;VN=0V
1
2
10
kΩ
kΩ
kΩ
150
2.5
602
5.0
2,380
10.0
VDD =1.8V;
Dout Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Dout =0.5V;VN=1.8V
Internal Resistance between VN
and VDD
RVND
R VNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 14 of 25
V2.0
Advanced Analog Technology, Inc.
SUMARY OF AAT8641 DETECTION VOLTAGE AND DELAY TIME (25℃)
SYMBOL
PARAMETER
DEVICE
AAT8641A
AAT8641B
AAT8641C
AAT8641D
AAT8641E
AAT8641F
AAT8641G
AAT8641H
AAT8641I
AAT8641J
AAT8641K
AAT8641A
AAT8641B
AAT8641C
AAT8641D
AAT8641E
AAT8641F
AAT8641G
AAT8641H
AAT8641I
AAT8641J
AAT8641K
AAT8641A
MIN
4.300
4.325
4.275
4.255
4.255
4.300
4.325
4.275
4.275
4.255
4.225
TYP
4.325
4.350
4.300
4.280
4.280
4.325
4.350
4.30
MAX
4.350
4.375
4.325
4.305
4.305
4.350
4.375
4.325
4.325
4.305
4.275
UNIT
V
VC1
V
V
V
V
Over Charge Threshold Voltage
V
V
V
4.30
V
4.280
4.250
V
V
VC2
VC1 − 0.30 VC1 − 0.25 VC1 − 0.20
VC1 − 0.25 VC1 − 0.20 VC1 − 0.15
VC1 − 0.25 VC1 − 0.20 VC1 − 0.15
VC1 − 0.25 VC1 − 0.20 VC1 − 0.15
VC1 − 0.25 VC1 − 0.20 VC1 − 0.15
V
V
V
V
V
VC1 − 0.30
VC1 − 0.20
Over Charge Release Voltage
VC1-0.25
V
VC1 − 0.25 VC1 − 0.20 VC1 − 0.15
VC1 − 0.25 VC1 − 0.20 VC1 − 0.15
VC1 − 0.25 VC1 − 0.20 VC1 − 0.15
VC1 − 0.25 VC1 − 0.20 VC1 − 0.15
VC1 − 0.25 VC1 − 0.20 VC1 − 0.15
V
V
V
V
V
VD1
2.420
2.220
2.220
2.201
2.201
2.420
2.220
2.220
2.220
2.201
2.201
2.500
2.300
2.300
2.281
2.281
2.500
2.300
2.300
2.300
2.281
2.281
2.580
2.380
2.380
2.361
2.361
2.580
2.380
2.380
2.380
2.361
2.361
V
AAT8641B
AAT8641C
AAT8641D
AAT8641E
AAT8641F
AAT8641G
AAT8641H
AAT8641I
AAT8641J
AAT8641K
V
V
V
V
V
V
V
V
V
V
Over Discharge Threshold
Voltage
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 15 of 25
V2.0
Advanced Analog Technology, Inc.
SUMMARY OF AAT8641 DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
DEVICE
AAT8641A
AAT8641B
AAT8641C
AAT8641D
AAT8641E
AAT8641F
AAT8641G
AAT8641H
AAT8641I
AAT8641J
AAT8641K
AAT8641A
AAT8641B
AAT8641C
AAT8641D
AAT8641E
AAT8641F
AAT8641G
AAT8641H
AAT8641I
AAT8641J
AAT8641K
AAT8641A
MIN
TYP
VD1+0.4
VD1+0.7
VD1
MAX
VD1+0.5
VD1+0.8
VD1+0.08
VD1+0.08
VD1+0.7
VD1+0.5
VD1+0.8
VD1+0.08
VD1+0.08
VD1+0.08
VD1+0.7
1.300
UNIT
VD2
VD1+0.3
VD1+0.6
VD1 − 0.08
VD1 − 0.08
V
V
V
V
V
V
V
V
V
V
V
s
VD1
VD1+0.5
VD1+0.3
VD1+0.6
VD1 − 0.08
VD1 − 0.08
VD1 − 0.08
VD1+0.6
VD1+0.4
VD1+0.7
VD1
Over Discharge Release Voltage
VD1
VD1
VD1+0.5
0.700
0.088
0.700
0.700
0.700
0.700
0.088
0.700
0.700
0.700
0.700
87.5
VD1+0.6
1.000
tC1
0.125
0.163
s
1.000
1.300
s
1.000
1.300
s
1.000
1.300
s
Over Charge Delay Time
1.000
1.300
s
0.125
0.163
s
1.000
1.300
s
1.000
1.300
s
1.000
1.300
s
1.000
1.300
s
tD1
125.0
162.5
ms
AAT8641B
AAT8641C
AAT8641D
AAT8641E
AAT8641F
AAT8641G
AAT8641H
AAT8641I
AAT8641J
AAT8641K
22.4
32.0
125.0
125.0
125.0
125.0
32.0
41.6
162.5
162.5
162.5
162.5
41.6
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
87.5
87.5
87.5
Over Discharge Delay Time
87.5
22.4
87.5
125.0
125.0
125.0
125.0
162.5
162.5
162.5
162.5
87.5
87.5
87.5
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 16 of 25
V2.0
Advanced Analog Technology, Inc.
SUMMARY OF AAT8641 DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL DEVICE MIN
TYP
150
150
100
130
100
100
200
150
130
200
100
500
500
480
490
480
480
510
500
490
510
480
8.0
MAX
170
170
120
150
120
120
220
170
150
220
120
600
600
600
600
600
600
600
600
600
600
600
10.4
UNIT
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
ms
VOC1
VOC2
tOC1
AAT8641A
AAT8641B
AAT8641C
AAT8641D
AAT8641E
AAT8641F
AAT8641G
AAT8641H
AAT8641I
AAT8641J
AAT8641K
AAT8641A
AAT8641B
AAT8641C
AAT8641D
AAT8641E
AAT8641F
AAT8641G
AAT8641H
AAT8641I
AAT8641J
AAT8641K
AAT8641A
AAT8641B
AAT8641C
AAT8641D
AAT8641E
AAT8641F
AAT8641G
AAT8641H
AAT8641I
AAT8641J
AAT8641K
130
130
80
110
80
Over Current Level 1 Detection Voltage
80
180
130
110
180
80
400
400
400
400
400
400
400
400
400
400
400
5.6
2.8
5.6
5.6
5.6
5.6
2.8
5.6
5.6
5.6
5.6
Over Current Level 2 Detection Voltage
4.0
8.0
8.0
8.0
8.0
4.0
8.0
8.0
8.0
8.0
5.2
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
10.4
10.4
10.4
10.4
5.2
Over Current Level 1 Detection Delay
Time
10.4
10.4
10.4
10.4
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 17 of 25
V2.0
Advanced Analog Technology, Inc.
TIMING CHART
AAT8641 (CHARGE AND DISCHARGE)
VC1
V
C2
VD2
V
D1
D
out
C
out
V
CHR
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 18 of 25
V2.0
Advanced Analog Technology, Inc.
TIMING CHART
AAT8641 (UNUSUAL CHARGE CURRENT, OVER CURRENT, AND SHORT
CIRCUIT)
D
out
C
out
Time
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 19 of 25
V2.0
Advanced Analog Technology, Inc.
TYPICAL APPLICATION
+
R1
100Ω
C1
0.1μF
VDD
Li
Battery
VN
GND
DOUT
COUT
R 2
1kΩ
−
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 20 of 25
V2.0
Advanced Analog Technology, Inc.
PACKAGE DIMENSION
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 21 of 25
V2.0
Advanced Analog Technology, Inc.
PACKAGE DIMENSION (CONT.)
DIMENSIONS IN MILLIMETERS DEMINSIONS IN INCHES
SYMBOLS
MIN
1.05
0.05
1.00
0.25
0.25
0.08
0.08
2.70
2.60
1.50
0.35
TYP
1.20
MAX
1.35
0.15
1.20
0.50
0.45
0.20
0.15
3.00
3.00
1.70
0.55
MIN
0.041
0.002
0.039
0.010
0.010
0.003
0.003
0.106
0.102
0.059
0.014
TYP
0.047
0.004
0.043
------
MAX
0.053
0.006
0.047
0.020
0.018
0.008
0.006
0.118
0.118
0.067
0.022
A
A1
A2
b
0.10
1.10
------
0.40
b1
c
0.016
------
------
0.11
c1
D
0.004
0.114
0.110
0.063
0.018
0.024 REF
0.037 BSC
0.075 BSC
5ο
2.90
E
2.80
E1
L
1.60
0.45
L1
e
0.60 REF
0.95 BSC
1.90 BSC
5ο
e1
0ο
3ο
6ο
10ο
7ο
0ο
3ο
6ο
10ο
7ο
θ
θ1
θ2
5ο
5ο
8ο
10ο
8ο
10ο
NOTE:
1. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.20 MILLIMETERS PER SIDE.
2. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.20MILLIMETERS PER SIDE.
3. THE PACKAGE TOP MAY BE SAMLLER THAN PACKAGE BOTTOM.
DIMENSION D AND E1 ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, INTERLEAD FLASH AND GATE BURRS, BUT
INCLUDING ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE MOLDED BODY.
4. THE SECTION B-B APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 MILLIMETERES AND
0.15 MILLIMETERS FROM THE LEAD TIP
5. LEAD FRAME MATERIAL: EFTEC-64T 1/2H OR H.
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 22 of 25
V2.0
Advanced Analog Technology, Inc.
TAPE AND REEL
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 23 of 25
V2.0
Advanced Analog Technology, Inc.
TAPE AND REEL (CONT.)
X.XXX X ± 0.0025
X.XXX
X.XX
X.X
± 0.006
± 0.025
± 0.10
± 0.25
X
UNIT: MILLIMETERS
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 24 of 25
V2.0
Advanced Analog Technology, Inc.
ORDERING INFORMATION
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 25 of 25
V2.0
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