AAT8640-S5-T [AAT]
ONE-CELL LI-ION BATTERY PROTECTION IC; 单节锂离子电池保护IC
| 型号： | AAT8640-S5-T |
| 厂家： | 
ADVANCED ANALOG TECHNOLOGY, INC. |
| 描述： | ONE-CELL LI-ION BATTERY PROTECTION IC |
| 文件： | 总25页 (文件大小：608K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Analog Technology, Inc.
Product information presented is current as of publication date. Details are subject to change without notice.
ONE-CELL LI-ION BATTERY PROTECTION IC
FEATURES
GENERAL DESCRIPTION
z Ideal for One-Cell Rechargeable Li-Ion
The AAT8640 series are designed to protect
one-cell rechargeable Li-Ion battery pack against
over-charge, over-discharge, over-current and
short circuit. They use CMOS process to provide
high accuracy voltage detection and low current
consumption.
Battery Packs
z High Accuracy Voltage Detection
z Low Current Consumption:
3μA Supply Current (Typical)
0.1μA Shutdown Current
Each of the AAT8640 devices incorporates
voltage comparators, bandgap reference voltage
generator, signal delay circuit, short circuit
detector, and digital control circuit.
z 3-Level Over Current Detection:
Over-Current Level 1 /Over Current Level 2
/ Short Circuit
z Wide Operating Temperature Range:
− 40οC to 85οC
In the charge process, when the battery voltage is
charged to a value greater than VC1(Over-Charge
z Small SOT25 Package
Threshold Voltage), the output of Cout pin
switches to the low level, i.e., the VN pin level.
The output of Cout pin will switch to high level
PIN CONFIGURATION
when the battery voltage falls lower than VC2
(Over-Charge Release Voltage), or when the
charger is disconnected from the battery pack and
the battery voltage level ranges between VC1 and
VC2.
TOP VIEW
COUT
VN
VDD
GND
During the discharge process, when the battery
voltage drops to a value lower than VD1
(Over-Discharge Threshold Voltage), the output
of Dout pin switches to low level immediately
DOUT
after the internal delay time elapses. The output
of Dout pin will switch to high level when the
(SOT25)
battery voltage is at a level higher than VD2
(Over-Discharge Release Voltage).
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Over current level 1 voltage (VOC1 ) is used to
monitor the amount of discharge current. If the
identical to a discharge current. If the short
circuit current is high enough to cause VN pin
voltage increase to greater thanVshort , the output
discharge current is high enough to cause VN pin
voltage increase to a value greater thanVOC1 , the
of Dout pin will move to the low level after a
output of Dout pin will switch to a low level
after a delay time tOC1 . If the load is removed
from battery pack, the output of Dout will
delay time t
, and the output of Dout level
short
will change to high when the load is removed
from battery pack.
change to a high level again.
The mechanism of short circuit protection is
BLOCK DIAGRAM:
VDD
Dout
Cout
GND
VN
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PIN DESCRIPTION
PIN NO. NAME I/O
DESCRIPTION
1
2
3
4
VN
VDD
GND
Dout
I
I
Voltage Detection Pin Between VN and GND
Power Supply Input Pin
Ground
O
O
Discharge Control Pin which Connects to External MOSFET Gate
5
Charge Control Pin which Connects to External MOSFET Gate.
Cout
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
SYMBOL
VALUE
UNIT
VDD
−0.3 to 8.0
Supply Voltage
V
VDD − 20 to VDD + 0.3
VN Pin Input Voltage
V
V
VVN
VDout
VCout
Pd
Dout Pin Output Voltage
Cout Pin Output Voltage
Power Dissipation
−0.3 to VDD + 0.3
VVN − 0.3 to VDD + 0.3
150
V
mW
οC
οC
TC
−40 to +85
Operating Temperature Range
Storage Temperature Range
Tstorage
−40 to +125
RECOMMENDED OPERATING CONDITIONS
TEST CONDITION
MIN
MAX
UNIT
Voltage Defined as VDD
Supply Voltage, VDD
1.5
7.0
V
to GND
Dout Output Voltage
VDD
VDD
GND
VN
V
V
Cout Output Voltage
OPERATION VOLTAGE AND OPERATION CURRENT
PARAMETER
TEST CONDITION
MIN
TYP MAX UNIT
Supply Current at Normal Operation
Mode
Standby Current at Power Down Mode
VDD =3.3V; VN=0V; GND=0V
μA
μA
3.0
-
6.0
0.1
-
Operation Voltage between VDD and
VN
1.5
20.0
V
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AAT8640A DETECTION VOLTAGE AND DELAY TIME (25οC )
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX UNIT
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.275
4.325
4.375
V
V
V
V
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.35 VC1-0.25 VC1-0.15
2.420 2.500 2.580
VD1+0.3 VD1+0.4 VD1+0.5
Over Discharge Threshold
Voltage
Over Discharge Release Voltage
tC1
tD1
VDD = 3.6V to 4.5V
VDD = 3.6V to 2.4V
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with tOC1
Over Current Level 1 Detection
Voltage
VOC1
130
400
150
500
170
600
mV
mV
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay
Time)
Vshort
V −1.7
VDD −1.3
VDD −0.9
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
Cout High Level Resistance
V
Pin Voltage (when VD1＜VDD
VD2)
VDD = 3.5V ; Cout = 3.0V ;
VN = 0V
＜
RCOH
RCOL
RDOH
RDOL
1
2
10
kΩ
kΩ
kΩ
kΩ
VDD = 4.5V ;
Cout
Low Level Resistance
150
2.5
2.5
602
5.0
5.0
2,380
10.0
10.0
Cout = 0.5V ; VN = 0V
VDD = 3.5V ; Dout = 3.0V ;
VN = 0V
VDD =1.8V ;
Dout High Level Resistance
Dout Low Level Resistance
Dout = 0.5V ; VN =1.8V
Internal Resistance between VN
and VDD
R VND
R VNG
VDD =1.8V ; VN = 0V
VDD = 3.5V ; VN = 3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
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AAT8640B DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX UNIT
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.300
4.350
4.400
V
V
V
V
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.30 VC1-0.20 VC1-0.10
2.220 2.300 2.380
VD1+0.6 VD1+0.7 VD1+0.8
Over Discharge Threshold
Voltage
Over Discharge Release Voltage
tC1
tD1
VDD = 3.6V to 4.5V
VDD = 3.6V to 2.2V
Over Charge Delay Time
0.088
22.4
0.125
32.0
0.163
41.6
s
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with tOC1
Over Current Level 1 Detection
Voltage
VOC1
130
400
150
500
170
600
mV
mV
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay
Time)
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
2.8
4.0
5.2
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage
(when VD1＜VDD＜VD2)
VDD = 3.5V ; COUT = 3.0V ;
VN = 0V
VDD = 4.5V ;
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
Dout Low Level Resistance
RCOH
RCOL
RDOH
RDOL
1
2
10
kΩ
kΩ
kΩ
kΩ
150
2.5
2.5
602
5.0
5.0
2,380
10.0
10.0
COUT = 0.5V ; VN = 0V
VDD = 3.5V ; Dout = 3.0V ;
VN = 0V
VDD =1.8V ;
Dout = 0.5V ; VN =1.8V
Internal Resistance between VN
and VDD
R VND
R VNG
VDD =1.8V ; VN = 0V
VDD = 3.5V ; VN = 3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
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Page 5 of 25
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AAT8640C DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN TYP
MAX UNIT
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.250
4.300
4.350
V
V
V
V
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.30 VC1-0.20 VC1-0.10
Over Discharge Threshold
Voltage
2.220
2.300
VD1
2.380
Over Discharge Release Voltage
VD1-0.08
VD1+0.08
tC1
tD1
VDD = 3.6V to 4.5V
VDD = 3.6V to 2.2V
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with tOC1
Over Current Level 1 Detection
Voltage
VOC1
80
100
480
120
600
mV
mV
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
400
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay
Time)
VDD −1.3
VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage
(when VD1＜VDD＜VD2)
VDD = 3.5V ;
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
RCOH
RCOL
RDOH
1
2
10
kΩ
kΩ
Cout = 3.0V ; VN = 0V
VDD = 4.5V ;
150
2.5
602
5.0
2,380
10.0
Cout = 0.5V ; VN = 0V
VDD = 3.5V ;
kΩ
kΩ
Dout = 3.0V ; VN = 0V
VDD =1.8V ;
Dout Low Level Resistance
RDOL
2.5
5.0
10.0
Dout = 0.5V ; VN =1.8V
Internal Resistance between VN
and VDD
R VND
R VNG
VDD =1.8V ; VN = 0V
VDD = 3.5V ; VN = 3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
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Page 6 of 25
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AAT8640D DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX UNIT
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.230
4.280
4.330
V
V
V
V
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.30 VC1-0.20 VC1-0.10
Over Discharge Threshold
Voltage
2.201
2.281
VD1
2.361
Over Discharge Release Voltage
VD1-0.08
VD1+0.08
tC1
tD1
VDD = 3.6V to 4.5V
VDD = 3.6V to 2.2V
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with tOC1
Over Current Level 1 Detection
Voltage
VOC1
110
400
130
490
150
600
mV
mV
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay
Time)
VDD −1.3
VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
VDD = 3.0V
μs
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage
(when VD1＜VDD＜VD2)
VDD = 3.5V ;
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
Dout Low Level Resistance
RCOH
1
2
10
kΩ
kΩ
Cout = 3.0V ; VN = 0V
VDD = 4.5V ;
RCOL
150
2.5
2.5
602
5.0
5.0
2,380
10.0
10.0
Cout = 0.5V ; VN = 0V
VDD = 3.5V ;
RDOH
RDOL
R VND
R VNG
kΩ
kΩ
Dout = 3.0V ; VN = 0V
VDD =1.8V ; Dout = 0.5V ;
VN =1.8V
Internal Resistance between VN
and VDD
VDD =1.8V ; VN=0V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
VDD = 3.5V ; VN = 3.5V
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Page 7 of 25
V2.0
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AAT8640E DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX UNIT
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.230
4.280
4.330
V
V
V
V
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.30 VC1-0.20 VC1-0.10
Over Discharge Threshold
Voltage
2.201
2.281
2.361
Over Discharge Release Voltage
VD1+0.5 VD1+0.6 VD1+0.7
tC1
tD1
VDD = 3.6V to 4.5V
VDD = 3.6V to 2.2V
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with tOC1
Over Current Level 1 Detection
Voltage
VOC1
80
100
480
120
600
mV
mV
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
400
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay
Time)
VDD −1.3
VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
tOC2
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
t
10
50
short
Detect Rising Edge of “ Dout
”
VCHR
Charger Detection Voltage
Cout High Level Resistance
-2.0
1
-1.3
-0.6
V
Pin Voltage
(when VD1＜VDD＜VD2)
VDD = 3.5V ;
RCOH
2
10
kΩ
kΩ
Cout = 3.0V ; VN = 0V
VDD = 4.5V ;
Cout Low Level Resistance
Dout High Level Resistance
Dout Low Level Resistance
RCOL
RDOH
RDOL
R VND
R VNG
150
2.5
2.5
602
5.0
5.0
2,380
10.0
10.0
Cout = 0.5V ; VN = 0V
VDD = 3.5V ; Dout = 3.0V ;
VN = 0V
VDD =1.8V ; Dout = 0.5V ;
VN =1.8V
kΩ
kΩ
Internal Resistance between VN
and VDD
VDD =1.8V ; VN = 0V
VDD = 3.5V ; VN = 3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
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Page 8 of 25
V2.0
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AAT8640F DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP MAX UNIT
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.275
4.325
4.375
V
V
V
V
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.35 VC1-0.25 VC1-0.15
2.420 2.500 2.580
VD1+0.3 VD1+0.4 VD1+0.5
Over Discharge Threshold
Voltage
Over Discharge Release Voltage
tC1
tD1
VDD = 3.6V to 4.5V
VDD = 3.6V to 2.4V
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with tOC1
Over Current Level 1 Detection
Voltage
VOC1
80
100
480
120
600
mV
mV
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
400
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay
Time)
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
VDD = 3.0V
5.6
8.0
2.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
2.0
tOC2
tshort
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
VCHR
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage
(When VD1＜VDD＜VD2)
VDD = 3.5V ;
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
Dout Low Level Resistance
RCOH
RCOL
RDOH
1
2
10
kΩ
kΩ
kΩ
Cout = 3.0V ; VN = 0V
VDD = 4.5V ; Cout = 0.5V ;
VN = 0V
VDD = 3.5V ;
150
2.5
2.5
602
5.0
5.0
2,380
10.0
10.0
Dout = 3.0V ;VN=0V
VDD =1.8V ;
RDOL
kΩ
Dout = 0.5V ;VN=1.8V
Internal Resistance between VN
and VDD
R VND
R VNG
VDD =1.8V ; VN = 0V
VDD = 3.5V ; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 9 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8640G DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP MAX UNIT
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.300
4.350
4.400
V
V
V
V
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.30 VC1-0.20 VC1-0.10
2.220 2.300 2.380
VD1+0.6 VD1+0.7 VD1+0.8
Over Discharge Threshold
Voltage
Over Discharge Release Voltage
tC1
tD1
VDD = 3.6V to 4.5V
VDD = 3.6V to 2.2V
Over Charge Delay Time
0.088
22.4
0.125
32.0
0.163
41.6
s
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with tOC1
Over Current Level 1 Detection
Voltage
VOC1
180
400
200
510
220
600
mV
mV
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay
Time)
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
2.8
4
5.2
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage(when VD1＜VDD
＜
VD2)
VDD = 3.5V ;
Cout High Resistance Level
Cout Low Resistance Level
Dout High Resistance Level
Dout Low Resistance Level
RCOH
RCOL
RDOH
RDOL
1
2
10
kΩ
kΩ
kΩ
kΩ
Cout = 3.0V ;VN=0V
VDD = 4.5V ;
150
2.5
2.5
602
5.0
5.0
2,380
10.0
10.0
Cout = 0.5V ;VN=0V
VDD = 3.5V ;
Dout = 3.0V ;VN=0V
VDD =1.8V ;
Dout = 0.5V ;VN=1.8V
Internal Resistance between VN
and VDD
R VND
RVNG
VDD =1.8V ; VN=0V
VDD = 3.5V ; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 10 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8640H DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN TYP MAX UNIT
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.250
4.300
4.350
V
V
V
V
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.30 VC1-0.20 VC1-0.10
Over Discharge Threshold
Voltage
2.220
2.300
VD1
2.380
Over Discharge Release Voltage
VD1-0.08
VD1+0.08
tC1
tD1
VDD = 3.6V to 4.5V
VDD = 3.6V to 2.2V
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with tOC1
Over Current Level 1 Detection
Voltage
VOC1
130
400
150
500
170
600
mV
mV
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Response with tshort Delay
Time)
Over Current Level 1 Detection
Delay Time
VDD = 3.0V
tOC1
tOC2
tshort
VCHR
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
Charger Detection Voltage
-2.0
-1.3
-0.6
V
Pin Voltage
(when VD1＜VDD＜VD2)
VDD = 3.5V ;
Cout High Resistance Level
Cout Low Resistance Level
Dout High Resistance Level
Dout Low Resistance Level
RCOH
RCOL
RDOH
RDOL
1
2
10
kΩ
kΩ
kΩ
kΩ
Cout = 3.0V ;VN=0V
VDD = 4.5V ;
150
2.5
2.5
602
5.0
5.0
2,380
10.0
10.0
Cout = 0.5V ;VN=0V
VDD = 3.5V ;
Dout = 3.0V ;VN=0V
VDD =1.8V ;
Dout = 0.5V ;VN=1.8V
Internal Resistance between VN
and VDD
R VND
R VNG
VDD =1.8V ; VN=0V
VDD = 3.5V ; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 11 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8640I DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN TYP MAX UNIT
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.250
4.300
4.350
V
V
V
V
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.30 VC1-0.20 VC1-0.10
Over Discharge Threshold
Voltage
2.220
2.300
VD1
2.380
Over Discharge Release Voltage
VD1-0.08
VD1+0.08
tC1
tD1
VDD = 3.6V to 4.5V
VDD = 3.6V to 2.2V
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with tOC1
Over Current Level 1 Detection
Voltage
VOC1
110
400
130
490
150
600
mV
mV
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Response with tshort Delay
Time)
Over Current Level 1 Detection
Delay Time
VDD = 3.0V
tOC1
tOC2
tshort
VCHR
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
VDD = 3.0V
μs
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage
(when VD1＜VDD＜VD2)
VDD = 3.5V ;
Cout High Resistance Level
Cout Low Resistance Level
Dout High Resistance Level
Dout Low Resistance Level
RCOH
RCOL
RDOH
RDOL
1
2
10
kΩ
kΩ
kΩ
kΩ
Cout = 3.0V ;VN=0V
VDD = 4.5V ;
150
2.5
2.5
602
5.0
5.0
2,380
10.0
10.0
Cout = 0.5V ;VN=0V
VDD = 3.5V ;
Dout = 3.0V ;VN=0V
VDD =1.8V ;
Dout = 0.5V ;VN=1.8V
Internal Resistance between VN
and VDD
R VND
R VNG
VDD =1.8V ; VN=0V
VDD = 3.5V ; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 12 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8640J DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX UNIT
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.230
4.280
4.330
V
V
V
V
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.30 VC1-0.20 VC1-0.10
Over Discharge Threshold
Voltage
2.201
2.281
VD1
2.361
Over Discharge Release Voltage
VD1-0.08
VD1+0.08
tC1
tD1
VDD = 3.6V to 4.5V
VDD = 3.6V to 2.2V
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with tOC1
Over Current Level 1 Detection
Voltage
VOC1
180
400
200
510
220
600
mV
mV
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
VDD −1.3 VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Response with tshort Delay
Time)
Over Current Level 1 Detection
Delay Time
VDD = 3.0V
tOC1
tOC2
tshort
VCHR
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
VDD = 3.0V
μs
10
50
Detect Rising Edge of “ Dout
”
Charger Detection Voltage
-2.0
-1.3
-0.6
V
Pin Voltage (when VD1＜VDD
＜
VD2)
VDD = 3.5V ;
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
Dout Low Level Resistance
RCOH
RCOL
RDOH
RDOL
1
2
10
kΩ
kΩ
kΩ
kΩ
Cout = 3.0V ;VN=0V
VDD = 4.5V ;
150
2.5
2.5
602
5.0
5.0
2,380
10.0
10.0
Cout = 0.5V ;VN=0V
VDD = 3.5V ;
Dout = 3.0V ;VN=0V
VDD =1.8V ;
Dout = 0.5V ;VN=1.8V
Internal Resistance between VN
and VDD
R VND
R VNG
VDD =1.8V ; VN=0V
VDD = 3.5V ; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 13 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8640K DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX UNIT
Detect rising edge of supply
voltage
Detect falling edge of supply
voltage
Detect falling edge of supply
voltage
Detect rising edge of supply
voltage
Over Charge Threshold Voltage
VC1
4.20
4.25
4.30
V
V
V
V
Over Charge Release Voltage
VC2
VD1
VD2
VC1-0.3
2.201
VC1-0.2 VC1-0.1
2.281 2.361
Over Discharge Threshold
Voltage
Over Discharge Release Voltage
VD1+0.5 VD1+0.6 VD1+0.7
0.700
87.5
80
1.000
125
1.300
162.5
120
s
VDD = 3.6V to 4.5V
VDD = 2.8V to 2.2V
Over Charge Delay Time
tC1
ms
mV
tD1
Over Discharge Delay Time
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with tOC1
100
Over Current Level 1 Detection
Voltage
VOC1
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
400
480
600
mV
V
Over Current Level 2 Detection
Voltage
VOC2
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge V −1.7
VDD −1.3 VDD −0.9
DD
of “VN” Pin Voltage ( Dout
Response with tshort Delay
Time)
Vshort
Short Circuit Detection Voltage
Over Current Level 1 Detection
Delay Time
5.6
8.0
10.4
ms
VDD = 3.0V
tOC1
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
tOC2
Short Circuit Detection Delay
Time
10
50
μs
VDD = 3.0V
tshort
Detect rising edge of “ Dout ” pin
voltage(when VD1＜VDD＜VD2)
VDD = 3.5V ;
VCHR
Charger Detection Voltage
Cout High Level Resistance
-2.0
1
-1.3
2
-0.6
10
V
RCOH
RCOL
RDOH
RDOL
kΩ
kΩ
kΩ
kΩ
Cout =3.0V;VN=0V
VDD = 4.5V ;
Cout Low Level Resistance
Dout High Level Resistance
Dout Low Level Resistance
150
2.5
2.5
602
5.0
5.0
2,380
10.0
10.0
Cout =0.5V;VN=0V
VDD = 3.5V ;
Dout =3.0V;VN=0V
VDD =1.8V ;
Dout =0.5V;VN=1.8V
Internal Resistance Between VN
and VDD
R VND
R VNG
VDD =1.8V ; VN=0V
VDD = 3.5V ; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance Between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 14 of 25
V2.0
Advanced Analog Technology, Inc.
SUMMARY OF AAT8640 DETECTION VOLTAGE AND DELAY TIME (25οC)
PARAMETER
SYMBOL
DEVICE
AAT8640A
AAT8640B
AAT8640C
AAT8640D
AAT8640E
AAT8640F
AAT8640G
AAT8640H
AAT8640I
AAT8640J
AAT8640K
AAT8640A
AAT8640B
AAT8640C
AAT8640D
AAT8640E
AAT8640F
AAT8640G
AAT8640H
AAT8640I
AAT8640J
AAT8640K
AAT8640A
AAT8640B
AAT8640C
AAT8640D
AAT8640E
AAT8640F
AAT8640G
AAT8640H
AAT8640I
AAT8640J
AAT8640K
MIN
4.275
4.30
TYP
4.325
4.35
MAX
4.375
4.40
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
VC1
4.25
4.3
4.35
4.23
4.28
4.33
4.23
4.28
4.33
4.275
4.3
4.325
4.35
4.375
4.4
Over Charge Threshold Voltage
4.25
4.3
4.35
4.25
4.3
4.35
4.23
4.28
4.33
4.20
4.25
4.30
VC2
VC1-0.35
VC1-0.3
VC1-0.3
VC1-0.3
VC1-0.3
VC1-0.35
VC1-0.3
VC1-0.3
VC1-0.3
VC1-0.3
VC1-0.3
2.420
2.220
2.220
2.201
2.201
2.420
2.220
2.220
2.220
2.201
2.201
VC1-0.25
VC1-0.2
VC1-0.2
VC1-0.2
VC1-0.2
VC1-0.25
VC1-0.2
VC1-0.2
VC1-0.2
VC1-0.2
VC1-0.2
2.5
VC1-0.15
VC1-0.1
VC1-0.1
VC1-0.1
VC1-0.1
VC1-0.15
VC1-0.1
VC1-0.1
VC1-0.1
VC1-0.1
VC1-0.1
2.580
2.380
2.380
2.361
2.361
2.580
2.380
2.380
2.380
2.361
2.361
Over Charge Release Voltage
VD1
2.3
2.3
2.281
2.281
2.5
Over Discharge Threshold
Voltage
2.3
2.3
2.3
2.281
2.281
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 15 of 25
V2.0
Advanced Analog Technology, Inc.
SUMMARY OF AAT8640 DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
DEVICE
AAT8640A
AAT8640B
AAT8640C
AAT8640D
AAT8640E
AAT8640F
AAT8640G
AAT8640H
AAT8640I
AAT8640J
AAT8640K
AAT8640A
AAT8640B
AAT8640C
AAT8640D
AAT8640E
AAT8640F
AAT8640G
AAT8640H
AAT8640I
AAT8640J
AAT8640K
AAT8640A
AAT8640B
AAT8640C
AAT8640D
AAT8640E
AAT8640F
AAT8640G
AAT8640H
AAT8640I
AAT8640J
AAT8640K
MIN
VD1+0.3
VD1+0.6
VD1-0.08
VD1-0.08
VD1+0.5
VD1+0.3
VD1+0.6
VD1-0.08
VD1-0.08
VD1-0.08
VD1+0.5
0.700
TYP
VD1+0.4
VD1+0.7
VD1
VD1
VD1+0.6
VD1+0.4
VD1+0.7
VD1
VD1
VD1
VD1+0.6
1
MAX
VD1+0.5
VD1+0.8
VD1+0.08
VD1+0.08
VD1+0.7
VD1+0.5
VD1+0.8
VD1+0.08
VD1+0.08
VD1+0.08
VD1+0.7
1.300
UNIT
V
VD2
V
V
V
V
V
Over Discharge Release Voltage
V
V
V
V
V
s
tC1
s
0.088
0.125
1
0.163
s
0.700
1.300
s
0.700
1
1.300
s
0.700
1
1.300
s
Over Charge Delay Time
0.700
1
1.300
s
0.088
0.125
1
0.163
s
0.700
1.300
s
0.700
1
1.300
s
0.700
1
1.300
s
0.700
1
1.300
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
tD1
87.5
125
32
162.5
22.4
41.6
87.5
125
125
125
125
32
162.5
87.5
162.5
87.5
162.5
Over Discharge Delay Time
87.5
162.5
22.4
41.6
87.5
125
125
125
125
162.5
87.5
162.5
87.5
162.5
87.5
162.5
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 16 of 25
V2.0
Advanced Analog Technology, Inc.
SUMMARY OF AAT8640 DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
DEVICE
AAT8640A
AAT8640B
AAT8640C
AAT8640D
AAT8640E
AAT8640F
AAT8640G
AAT8640H
AAT8640I
AAT8640J
AAT8640K
AAT8640A
AAT8640B
AAT8640C
AAT8640D
AAT8640E
AAT8640F
AAT8640G
AAT8640H
AAT8640I
AAT8640J
AAT8640K
AAT8640A
AAT8640B
AAT8640C
AAT8640D
AAT8640E
AAT8640F
AAT8640G
AAT8640H
AAT8640I
AAT8640J
AAT8640K
MIN
130
130
80
TYP
150
150
100
130
100
100
200
150
130
200
100
500
500
480
490
480
480
510
500
490
510
480
8
MAX
170
170
120
150
120
120
220
170
150
220
120
600
600
600
600
600
600
600
600
600
600
600
10.4
5.2
UNIT
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
ms
VOC1
110
80
Over Current Level 1
Detection Voltage
80
180
130
110
180
80
VOC2
400
400
400
400
400
400
400
400
400
400
400
5.6
Over Current Level 2
Detection Voltage
tOC1
ms
2.8
4
ms
5.6
8
10.4
10.4
10.4
10.4
5.2
ms
5.6
8
ms
5.6
8
Over Current Level 1
Detection Delay Time
ms
5.6
8
ms
2.8
4
ms
5.6
8
10.4
10.4
10.4
10.4
ms
5.6
8
ms
5.6
8
ms
5.6
8
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 17 of 25
V2.0
Advanced Analog Technology, Inc.
TIMING CHART
AAT8640 (CHARGE AND DISCHARGE)
VC1
V
C2
V
DD
VD2
V
D1
t
t
V
D
1
D
1
DD
D
out
GND
VDD
t
t
C 1
C 1
C
out
VN
V
DD
GND
VCHR
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 18 of 25
V2.0
Advanced Analog Technology, Inc.
TIMING CHART
AAT8640 (UNUSUAL CHARGE CURRENT, OVER CURRENT, SHORT
CIRCUIT)
V
C 1
V
C 2
V
DD
VD 2
VD1
t OC 2
t OC 1
t OC 2
t short
t OC
1
V
DD
D
C
out
V
V
DD
DD
t
C 1
out
V
DD
Vshort
VOC 2
VOC 1
VCHR
Time
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 19 of 25
V2.0
Advanced Analog Technology, Inc.
TYPICAL APPLICATION
+
R1
100Ω
C1
0.1μF
VDD
Li
Battery
VN
GND
DOUT
COUT
R2
1kΩ
−
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 20 of 25
V2.0
Advanced Analog Technology, Inc.
PACKAGE DIMENSION
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 21 of 25
V2.0
Advanced Analog Technology, Inc.
PACKAGE DIMENSION (CONT.)
DIMENSIONS IN MILLIMETERS DEMINSIONS IN INCHES
SYMBOLS
MIN
1.05
0.05
1.00
0.25
0.25
0.08
0.08
2.70
2.60
1.50
0.35
TYP
1.20
MAX
1.35
0.15
1.20
0.50
0.45
0.20
0.15
3.00
3.00
1.70
0.55
MIN
0.041
0.002
0.039
0.010
0.010
0.003
0.003
0.106
0.102
0.059
0.014
TYP
0.047
0.004
0.043
------
MAX
0.053
0.006
0.047
0.020
0.018
0.008
0.006
0.118
0.118
0.067
0.022
A
A1
A2
b
0.10
1.10
------
0.40
b1
c
0.016
------
------
0.11
c1
D
0.004
0.114
0.110
0.063
0.018
0.024 REF
0.037 BSC
0.075 BSC
5ο
2.90
E
2.80
E1
L
1.60
0.45
L1
e
0.60 REF
0.95 BSC
1.90 BSC
5ο
e1
0ο
3ο
6ο
10ο
7ο
0ο
3ο
6ο
10ο
7ο
θ
θ1
θ2
5ο
5ο
8ο
10ο
8ο
10ο
NOTE:
1. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.20 MILLIMETERS PER SIDE.
2. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.20MILLIMETERS PER SIDE.
3. THE PACKAGE TOP MAY BE SAMLLER THAN PACKAGE BOTTOM.
DIMENSION D AND E1 ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, INTERLEAD FLASH AND GATE BURRS, BUT
INCLUDING ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE MOLDED BODY.
4. THE SECTION B-B APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 MILLIMETERES AND
0.15 MILLIMETERS FROM THE LEAD TIP
5. LEAD FRAME MATERIAL: EFTEC-64T 1/2H OR H.
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 22 of 25
V2.0
Advanced Analog Technology, Inc.
TAPE AND REEL
PACKING METHOD: 3,000PCS/REEL, 5 REELS/BOX
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 23 of 25
V2.0
Advanced Analog Technology, Inc.
TAPE AND REEL (CONT.)
X.XXX X ± 0.0025
X.XXX
X.XX
X.X
± 0.006
± 0.025
± 0.10
± 0.25
X
UNIT: MILLIMETERS
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 24 of 25
V2.0
Advanced Analog Technology, Inc.
ORDERING INFORMATION
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 25 of 25
V2.0
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