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AWT6280RM11P8 [ANADIGICS]

Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control; 四频GSM / GPRS /极性EDGE功率放大器模块集成功率控制
AWT6280RM11P8
型号： AWT6280RM11P8
厂家： ANADIGICS, INC    ANADIGICS, INC
描述：

Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
四频GSM / GPRS /极性EDGE功率放大器模块集成功率控制

放大器 射频 微波 功率控制 功率放大器 GSM 高功率电源
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ꢁWt6280  
Quad-band GsM/GPꢃs/Polar ꢀDGꢀ  
Power Amplifier Module  
wiꢄh Inꢄegraꢄed Power Conꢄrol  
Data Sheet - Rev 2.1  
Fꢀꢁtꢂꢃꢀs  
•ꢀ Internal Reference Voltage  
•ꢀ Integrated Power Control  
•ꢀ InGaP HBT Technology  
•ꢀ ESD Protection on All Pins (2.5 kV)  
•ꢀ Low profile 1.0 mm  
•ꢀ Small Package Outline 7 mm x 7 mm  
•ꢀ EGPRS Capable (class 12)  
•ꢀ RoHS Compliant Package, 250 oC MSL-3  
A
W
T6280R  
GMsK MODꢀ  
•ꢀ +35 dBm GSM850/900 Output Power  
•
+33 dBm DCS/PCS Output Power  
•ꢀ 55 % GSM850/900 PAE  
52 % DCS/PCS PAE  
•
•ꢀ Power control range > 50 dB  
ꢀDGꢀ MODꢀ  
•
•
+29 dBm GSM850/900 Output Power  
+28.5 dBm DCS/PCS Output Power  
M11 Package  
18 Pin 7 mm x 7 mm x 1.0 mm  
surface Mounꢄ Module  
•ꢀ 29 % GSM850/900 PAE  
•ꢀ 30 % DCS/PCS PAE  
•ꢀ -64 dBc Typical ACPR (400 kHz)  
•ꢀ -74 dBc Typical ACPR (600 kHz)  
ꢁPPLICꢁtIONs  
•
Dual/Tri/Quad Band Handsets, PDAs, and  
Data Devices  
PꢃODꢂCt DꢀsCꢃIPtION  
This power amplifier module supports dual, tri and  
quad band applications for GMSK and 8-PSK modu-  
lation schemes using an open loop polar architec-  
ture. There are two amplifier chains, one to support  
GSM850/900 bands, the other for DCS/PCS bands.  
Each amplification chain is optimized for excellent  
EDGE efficiency, power, and linearity in a Polar loop  
environment while maintaining high efficiency in the  
GSM/GPRS mode.  
The amplifier’s power control range is typically 55 dB,  
with the output power set by applying an analog volt-  
age to VRAMP. All of the RF ports for this device are DC  
blocked and internally matched to 50ꢀ.  
DCS/PCS  
DCS/PCS_IN  
DCS/PCS_OUT  
BS  
TX_EN  
The module includes an internal reference voltage  
and integrated power control scheme for use in both  
GMSK and 8-PSK operation. This facilitates fast and  
easy production calibration and reduces the number  
of external components required to complete a power  
control function.  
Bias/Power  
Control  
VBATT  
CEXT  
VRAMP  
GSM850/900_IN  
GSM850/900_OUT  
GSM850/900  
Figure 1: Block Diagram  
11/2008  
ꢁWt6280  
1
2
3
18  
17  
16  
15  
14  
DCS/PCS_IN  
DCS/PCS_OUT  
GND  
BS  
TX_EN  
GND  
VBATT  
4
13  
12  
11  
10  
N/C  
CEXT  
5
6
GND  
GND  
VRAMP  
7
8
9
GSM850/900_IN  
GSM850/900_OUT  
Figure 2: Pinouꢄ (X - ray top View)  
table 1: Pin Deꢅcripꢄion  
PIN  
NꢁMꢀ  
DꢀsCꢃIPtION  
PIN  
NꢁMꢀ  
DꢀsCꢃIPtION  
1
2
3
DCS/PCS_IN DCS/PCS RF Input  
10 GSM850/900_OUT GSM850/900 RF Output  
BS  
Band Select Logic Input  
TX Enable Logic Input  
11  
12  
GND  
GND  
Ground  
Ground  
TX_EN  
Battery Supply  
Connection  
No Connection. Do not  
ground  
4
5
6
V
BATT  
13  
14  
15  
N/C  
GND  
GND  
C
EXT  
Bypass  
Ground  
Ground  
Analog Signal used to  
control the output power  
V
RAMP  
7
8
9
GSM850/900_IN GSM850/900 RF Input  
16  
17  
18  
DCS/PCS_OUT DCS/PCS RF Output  
GND  
GND  
Ground  
Ground  
GND  
GND  
Ground  
Ground  
2
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
ꢀLꢀCtꢃICꢁL CHꢁꢃꢁCtꢀꢃIstICs  
table 2: ꢁbꢅoluꢄe Maximum ꢃaꢄingꢅ  
PꢁꢃꢁMꢀtꢀꢃ  
Supply Voltage (VBATT  
RF Input Power (RFIN  
Control Voltage (VRAMP  
Storage Temperature (TSTG  
MIN  
-
MꢁX  
+7  
ꢂNIts  
V
)
)
-
11  
dBm  
V
)
-0.3  
-55  
1.8  
150  
)
°C  
sꢄreꢅꢅeꢅ in exceꢅꢅ of ꢄhe abꢅoluꢄe raꢄingꢅ may cauꢅe permanenꢄ  
damage. Funcꢄional operaꢄion iꢅ noꢄ implied under ꢄheꢅe  
condiꢄionꢅ. ꢀxpoꢅure ꢄo abꢅoluꢄe raꢄingꢅ for exꢄended periodꢅ  
of ꢄime may adverꢅely affecꢄ reliabiliꢄy.  
GND  
GND  
DCS/PCS_IN  
>+2500 V <-2500 V  
DCS/PCS_OUT  
>+2500 V <-2500 V  
16  
15  
14  
13  
1
2
3
4
17  
18  
BS  
GND  
>+2500 V <-2500 V  
TX_EN  
>+2500 V <-2500 V  
GND  
N/C  
VBATT  
>+2500 V <-2500 V  
GND  
CEXT  
GND  
GND  
5
6
7
12  
11  
>+2500 V <-2500 V  
VRAMP  
>+2500 V <-2500 V  
GSM850/900_OUT  
>+2500 V <-2500 V  
GSM850/900_IN  
>+2500 V <-2500 V  
9
10  
8
GND  
GND  
Figure 3: ꢀsD Pin ꢃaꢄing  
ꢀLꢀCtꢃOstꢁtIC DIsCHꢁꢃGꢀ sꢀNsItIVItY  
The AWT6280 part was tested to determine the ESD  
sensitivity of each package pin with respect to ground.  
All the package pins were subjected to an ESD  
pulse event using the Human Body Model outlined  
in JESD22-A114C.01 in either polarity with respect  
to ground. The pre and post test I-V characteristics  
of each pin are recorded. The ratings on each pin  
require that it sustain the ESD event and show no  
degradation.  
3
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
table 3: Operaꢄing Condiꢄionꢅ  
MIN tYP MꢁX ꢂNIts  
PꢁꢃꢁMꢀtꢀꢃ  
COMMꢀNts  
Case temperature (T  
C
)
-20  
3.0  
-
85  
°C  
V
Supply voltage (VBATT  
)
3.5  
4.8  
V
BATT = 4.8 V, VRAMP = 0 V,  
A  
Power supply leakage current  
-
1
10  
TX_EN = LOW  
No RF applied  
Control Voltage Range  
0.2  
-
-
1.6  
1
V
V
P
RAMP = 0.2 V, TX_EN = LOW YHIGH  
IN = 5 dB  
s  
Turn on Time (TON  
)
-
V
P
RAMP = 0.2 V, TX_EN = LOW YHIGH  
IN = 5 dB  
s  
Turn Off Time (TOFF  
)
-
-
1
s  
s  
Rise Time (TRISE  
Fall Time (TFALL  
)
-
-
-
-
-
-
-
1
1
P
OUT = -10 dBm YPMAX (within 0.2 dB)  
)
POUT = PMAX Y-10 dBm (within 0.2 dB)  
V
V
RAMP Input Capacitance  
RAMP Input Current  
3
-
-
pF  
A  
10  
50  
Duty Cycle  
-
%
the device may be operaꢄed ꢅafely over ꢄheꢅe condiꢄionꢅ; however, parameꢄric performance iꢅ guaranꢄeed only  
over the conditions defined in the electrical specifications.  
table 4: Digiꢄal Inpuꢄꢅ  
PꢁꢃꢁMꢀtꢀꢃ  
sYMBOL  
MIN tYP MꢁX ꢂNIts  
Logic High Voltage  
Logic Low Voltage  
Logic High Current  
Logic Low Current  
V
IH  
1.2  
-
-
-
-
3.0  
0.5  
30  
V
V
IL  
-
-
-
V
A  
A  
|IIH  
|
|IIL  
|
30  
table 5: Logic Conꢄrol table  
OPꢀꢃꢁtIONꢁL MODꢀ  
GSM850/900  
Bs  
LOW  
HIGH  
-
tX_ꢀN  
HIGH  
DCS/PCS  
HIGH  
PA DISABLED  
LOW  
4
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
table 6: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for GsM850 GMsK mode  
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulꢅe Widꢄh =1154 µꢅ, Duꢄy = 25%,  
ZIN = ZOUT = 50 Ω, tC = 25 °C, VRAMP = 1.6 V, Bs = LOW, tX_ꢀN = HIGH  
PꢁꢃꢁMꢀtꢀꢃ  
MIN  
824  
0
tYP  
-
MꢁX  
849  
5
ꢂNIt  
MHz  
dBm  
dBm  
COMMꢀNts  
Operating Frequency  
(
F
IN )  
Input Power (PIN  
)
3
Output Power (PMAX  
)
34.5  
35.3  
-
Freq = 824 to 849 MHz  
Degraded Output Power  
(POUT  
V
P
BATT = 3.0 V, T  
IN = 0 dBm  
C
= 85 °C  
32.5  
33.5  
-
dBm  
)
PAE @ PMAX  
48  
53  
-
%
Freq = 824 to 849 MHz  
Forward Isolation 1  
-
-42  
-30  
dBm  
TX_EN = 0 V, PIN = 5 dBm  
TX_EN = HIGH ,VRAMP = 0.2 V  
Forward Isolation 2  
Cross Isolation  
-
-
-26  
-33  
-20  
-20  
dBm  
dBm  
P
IN = 5 dBm  
P
OUT < 34.5 dBm  
(2Fo, 3Fo @ DCS/PCS port)  
Second Harmonic  
Third Harmonic  
-
-
-23  
-42  
-15  
-20  
dBm  
dBm  
P
P
OUT < 34.5 dBm  
OUT < 34.5 dBm  
n * fo (n > 4), Fo 12.75  
GHz  
-
-30  
-10  
dBm  
P
OUT < 34.5 dBm  
VSWR = 6:1 All Phases , POUT < 34.5 dBm  
Stability  
-
-
-
-
-36  
dBm  
dBm  
F
F
OUT < 1 GHz  
OUT > 1 GHz  
-30  
No Permanent Degradation  
VSWR 10:1, All Phase Angles  
Ruggedness  
POUT < 34.5 dBm  
F
F
TX = 849 MHz, RBW = 100 kHz,  
RX = 869 to 894 MHz, POUT < 34.5 dBm  
RX Noise Power  
Input Return Loss  
-
-
-86  
-84  
dBm  
1.5:1 2.5:1 VSWR  
POUT < 34.5 dBm  
5
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
table 7: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for GsM850 8PsK mode  
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulꢅe Widꢄh =1154 µꢅ, Duꢄy = 25%  
ZIN = ZOUT = 50 Ω, tC = 25 °C, Bs = LOW, tX_ꢀN = HIGH  
PꢁꢃꢁMꢀtꢀꢃ  
Operating Frequency  
Input Power  
MIN  
824  
0
tYP  
MꢁX  
849  
5
ꢂNIt  
MHz  
dBm  
COMMꢀNts  
(
F
IN )  
-
3
F
P
IN = 824 to 849 MHz  
OUT set = +29 dBm  
PAE  
20  
28  
-
%
ACPR  
200 kHz  
400 kHz  
600 kHz  
1800 kHz  
-
-
-
-
-38  
-62  
-72  
-77  
-34  
-58  
-64  
-68  
dBc/30 kHz  
dBc/30 kHz All conditions under Polar operation  
dBc/30 kHz  
dBc/100 kHz  
POUT = +29 dBm  
All Conditions under Polar operation  
OUT = +29 dBm  
EVM  
-
1
5
%
P
6
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
table 8: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for GsM900 GMsK mode  
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulꢅe Widꢄh =1154 µꢅ, Duꢄy = 25%,  
ZIN = ZOUT = 50 Ω, tC = 25 °C, VRAMP = 1.6 V, Bs = HIGH, tX_ꢀN = HIGH  
PꢁꢃꢁMꢀtꢀꢃ  
MIN  
880  
0
tYP  
-
MꢁX  
915  
5
ꢂNIt  
MHz  
dBm  
dBm  
COMMꢀNts  
Operating Frequency  
(
F
IN )  
Input Power (PIN  
)
3
Output Power (PMAX  
)
34.5  
35.0  
-
Freq = 880 to 915 MHz  
Degraded Output Power  
(POUT  
V
P
BATT = 3.0 V, T  
IN = 0 dBm  
C
= 85 °C  
32.5  
33.0  
-
dBm  
)
PAE @ PMAX  
50  
55  
-
%
Freq = 880 to 915 MHz  
Forward Isolation 1  
-
-39  
-30  
dBm  
TX_EN = 0 V, PIN = 5 dBm  
TX_EN = HIGH ,VRAMP = 0.2 V  
Forward Isolation 2  
Cross Isolation  
-
-
-26  
-20  
-20  
dBm  
dBm  
P
IN = 5 dBm  
-31  
P
OUT < 34.5 dBm  
(2Fo, 3Fo @ DCS/PCS port)  
Second Harmonic  
Third Harmonic  
-
-
-29  
-39  
-15  
-20  
dBm  
dBm  
P
P
OUT < 34.5 dBm  
OUT < 34.5 dBm  
n * fo (n > 4), Fo 12.75  
GHz  
-
-29  
-8  
dBm  
P
OUT < 34.5 dBm  
VSWR = 6:1 All Phases , POUT < 34.5 dBm  
Stability  
-
-
-
-
-36  
dBm  
dBm  
F
F
OUT < 1 GHz  
OUT > 1 GHz  
-30  
No Permanent Degradation  
VSWR 10:1, All Phase Angles  
Ruggedness  
POUT < 34.5 dBm  
F
F
TX = 915 MHz, RBW = 100 kHz,  
RX = 925 to 935 MHz, POUT < 34.5 dBm  
-
-85  
-86  
-80  
-85  
dBm  
dBm  
RX Noise Power  
F
F
TX = 915 MHz, RBW = 100 kHz,  
RX = 935 to 960 MHz, POUT < 34.5 dBm  
-
-
Input Return Loss  
1.5:1 2.5:1 VSWR  
POUT < 34.5 dBm  
7
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
table 9: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for GsM900 8PsK mode  
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulꢅe Widꢄh =1154 µꢅ, Duꢄy = 25%,  
ZIN = ZOUT = 50 Ω, tC = 25 °C , Bs =HIGH, tX_ꢀN = HIGH  
PꢁꢃꢁMꢀtꢀꢃ  
Operating Frequency  
Input Power  
MIN  
880  
0
tYP  
MꢁX  
915  
5
ꢂNIt  
MHz  
dBm  
COMMꢀNts  
(
F
IN )  
-
3
F
P
IN = 880 to 915 MHz  
OUT set = +29 dBm  
PAE  
20  
29  
-
%
ACPR  
200 kHz  
400 kHz  
600 kHz  
1800 kHz  
-
-
-
-
-38  
-64  
-74  
-77  
-34  
-58  
-64  
-68  
dBc/30 kHz  
dBc/30 kHz All conditions under Polar operation  
dBc/30 kHz  
dBc/100 kHz  
POUT = +29 dBm  
All Conditions under Polar operation  
OUT = +29 dBm  
EVM  
-
1
5
%
P
8
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
table 10: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for DCs GMsK mode  
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulꢅe Widꢄh =1154 µꢅ,  
Duꢄy = 25%, ZIN = ZOUT = 50 Ω, tC = 25 °C , Bs =HIGH, tX_ꢀN = HIGH  
PꢁꢃꢁMꢀtꢀꢃ  
MIN  
1710  
0
tYP  
-
MꢁX  
ꢂNIt  
MHz  
dBm  
dBm  
COMMꢀNts  
Operating Frequency  
(
F
IN  
)
1785  
Input Power (PIN  
)
3
5
-
Output Power (PMAX  
)
32.0  
33.2  
Freq = 1710 to1785 MHz  
Degraded Output Power  
(POUT  
V
P
BATT = 3.0 V, T  
IN = 0 dBm  
C
= 85 °C  
30.0  
31.0  
-
dBm  
)
PAE @ PMAX  
45  
-
52  
-
%
Freq = 1710 to1785 MHz  
Forward Isolation 1  
-37  
-31  
dBm  
TX_EN = 0 V, PIN = 5 dBm  
TX_EN = HIGH ,VRAMP = 0.2 V  
Forward Isolation 2  
-
-22  
-17  
dBm  
P
P
P
IN = 5 dBm  
Second Harmonic  
Third Harmonic  
-
-
-19  
-27  
-10  
-20  
dBm  
dBm  
OUT < 32.0 dBm  
OUT < 32.0 dBm  
n * fo (n > 4), Fo 12.75  
GHz  
-
-34  
-10  
dBm  
P
OUT < 32.0 dBm  
VSWR = 6:1 All Phases , POUT < 32.0 dBm  
Stability  
-
-
-
-
-36  
dBm  
dBm  
F
F
OUT < 1 GHz  
OUT > 1 GHz  
-30  
No Permanent Degradation  
VSWR 10:1, All Phase Angles  
Ruggedness  
POUT < 32.0 dBm  
F
F
TX = 1785 MHz, RBW = 100 kHz,  
RX = 1805 to1880 MHz, POUT < 32.0 dBm  
RX Noise Power  
Input Return Loss  
-
-
-86  
-81  
dBm  
1.5:1 2.5:1 VSWR  
POUT < 32.0 dBm  
9
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
table 11: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for DCs 8PsK mode  
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulꢅe Widꢄh =1154 µꢅ, Duꢄy = 25%,  
ZIN = ZOUT = 50 Ω, tC = 25 °C , Bs =HIGH, tX_ꢀN = HIGH  
PꢁꢃꢁMꢀtꢀꢃ  
Operating Frequency  
Input Power  
MIN  
IN ) 1710  
0
tYP  
MꢁX  
1785  
5
ꢂNIt  
MHz  
dBm  
COMMꢀNts  
(
F
-
3
F
P
IN = 1710 to 1785 MHz  
OUT set = +28.5 dBm  
PAE  
25  
30  
-
%
ACPR  
200 kHz  
400 kHz  
600 kHz  
1800 kHz  
-
-
-
-
-38  
-62  
-73  
-76  
-34  
-58  
-64  
-68  
dBc/30 kHz  
dBc/30 kHz All conditions under Polar operation  
dBc/30 kHz  
dBc/100 kHz  
POUT = +28.5 dBm  
All Conditions under Polar operation  
OUT = +28.5 dBm  
EVM  
-
1
5
%
P
10  
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
table 12: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for PCs GMsK mode  
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulꢅe Widꢄh =1154 µꢅ,  
Duꢄy = 25%, ZIN = ZOUT = 50 Ω, tC = 25 °C , Bs =HIGH, tX_ꢀN = HIGH  
PꢁꢃꢁMꢀtꢀꢃ  
MIN  
1850  
0
tYP  
-
MꢁX  
ꢂNIt  
MHz  
dBm  
dBm  
COMMꢀNts  
Operating Frequency  
(
F
IN  
)
1910  
Input Power (PIN  
)
3
5
-
Output Power (PMAX  
)
32.0  
32.8  
Freq = 1850 to1910 MHz  
Degraded Output Power  
(POUT  
V
P
BATT = 3.0 V, T  
IN = 0 dBm  
C
= 85 °C  
30.0  
30.5  
-
dBm  
)
PAE @ PMAX  
45  
-
52  
-
%
Freq = 1850 to1910 MHz  
Forward Isolation 1  
-39  
-33  
dBm  
TX_EN = 0 V, PIN = 5 dBm  
TX_EN = HIGH ,VRAMP = 0.2 V  
Forward Isolation 2  
-
-23  
-17  
dBm  
P
P
P
IN = 5 dBm  
Second Harmonic  
Third Harmonic  
-
-
-21  
-12  
-20  
dBm  
dBm  
OUT < 32.0 dBm  
OUT < 32.0 dBm  
-35  
n * fo (n > 4), Fo 12.75  
GHz  
-
-33  
-10  
dBm  
P
OUT < 32.0 dBm  
VSWR = 6:1 All Phases , POUT < 32.0 dBm  
Stability  
-
-
-
-
-36  
dBm  
dBm  
F
F
OUT < 1 GHz  
OUT > 1 GHz  
-30  
No Permanent Degradation  
VSWR 10:1, All Phase Angles  
Ruggedness  
POUT < 32.0 dBm  
F
F
TX = 1910 MHz, RBW = 100 kHz,  
RX = 1930 to1990 MHz, POUT < 32.0 dBm  
RX Noise Power  
Input Return Loss  
-
-
-87  
-82  
dBm  
1.5:1 2.5:1 VSWR  
POUT < 32.0 dBm  
11  
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
table 13: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for PCs 8PsK mode  
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulꢅe Widꢄh =1154 µꢅ, Duꢄy = 25%,  
ZIN = ZOUT = 50 Ω, tC = 25 °C , Bs =HIGH, tX_ꢀN = HIGH  
PꢁꢃꢁMꢀtꢀꢃ  
Operating Frequency  
Input Power  
MIN  
IN ) 1850  
0
tYP  
MꢁX  
1910  
5
ꢂNIt  
MHz  
dBm  
COMMꢀNts  
(
F
-
3
F
P
IN = 1850 to 1910 MHz  
OUT set = +28.5 dBm  
PAE  
25  
32  
-
%
ACPR  
200 kHz  
400 kHz  
600 kHz  
1800 kHz  
-
-
-
-
-37  
-63  
-72  
-75  
-34  
-58  
-64  
-68  
dBc/30 kHz  
dBc/30 kHz All conditions under Polar operation  
dBc/30 kHz  
dBc/100 kHz  
POUT = +28.5 dBm  
All Conditions under Polar operation  
OUT = +28.5 dBm  
EVM  
-
1
5
%
P
12  
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
ꢁPPLICꢁtION INFOꢃMꢁtION  
18  
17  
DCS/PCS RF INPUT  
1
16  
15  
14  
13  
12  
11  
10  
DCS/PCS_IN  
DCS/PCS_OUT  
2
3
4
5
6
7
BAND SELECT  
BS  
GND  
GND  
1nF++  
1nF++  
TX_EN  
VBATT  
CEXT  
TX ENABLE  
ꢁsM  
or  
BATTERY  
VOLTAGE  
N/C  
47uF++ 2.7pF**  
22nF**  
ꢁWt6280  
GND  
FꢀM  
DAC OUTPUT  
VRAMP  
GSM_IN  
GND  
68pF*  
2.2k*  
GSM_OUT  
GSM850/900 RF INPUT  
8
9
*
Component values depends on baseband chipset used.  
** This component should be placed as close to the device pin as possible.  
++ These components are recommended as good design practice for improving noise  
rejection characteristics. The values specified are not critical as they may not be required in the  
final application.  
Figure 4: ꢃecommended ꢁpplicaꢄion Circuiꢄ  
13  
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
PꢁCKꢁGꢀ OꢂtLINꢀ  
Figure 5: M11 Package Ouꢄline - 18 Pin 7 mm x 7 mm x 1.0 mm surface Mounꢄ Module  
Figure 6: Branding Specification  
14  
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
Figure 7: ꢃecommended PCB Layouꢄ Informaꢄion  
15  
Data Sheet - Rev 2.1  
11/2008  
ꢁWt6280  
OꢃDꢀꢃING INFOꢃMꢁtION  
OꢃDꢀꢃ  
NꢂMBꢀꢃ  
tꢀMPꢀꢃꢁtꢂꢃꢀ  
PꢁCKꢁGꢀ  
DꢀsCꢃIPtION  
COMPONꢀNt PꢁCKꢁGING  
ꢃꢁNGꢀ  
RoHS-compliant 18 Pin  
AWT6280RM11P8  
AWT6280RM11P9  
-20 °C to +85°C  
7 mm x 7 mm x 1.0 mm Tape and Reel, 2500 pieces per reel  
Surface Mount Module  
RoHS-compliant 18 Pin  
-20 °C to +85°C  
7 mm x 7 mm x 1.0 mm  
Surface Mount Module  
Partial Tape and Reel  
ꢁNꢁDIGICs, Inc.  
141 Mount Bethel Road  
Warren, New Jersey 07059, U.S.A.  
Tel: +1 (908) 668-5000  
Fax: +1 (908) 668-5132  
URL: http://www.anadigics.com  
E-mail: Mktg@anadigics.com  
IMPOꢃtꢁNt NOtICꢀ  
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.  
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to  
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed  
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers  
to verify that the information they are using is current before placing orders.  
WꢁꢃNING  
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of anANADIGICS product  
in any such application without written consent is prohibited.  
16  
Data Sheet - Rev 2.1  
11/2008  

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