AF9903MSA [ANACHIP]

Transistor,;


型号：	AF9903MSA
厂家：	ANACHIP CORP
描述：	Transistor,
文件：	总8页 (文件大小：800K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AF9903M

2N and 2P-Channel Enhancement Mode Power MOSFET

Features

General Description

- Simple Drive Requirement

The advanced power MOSFET provides the designer

with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

- Low On-Resistance

- Full Bridge Application on LCD Monitor Inverter

- Pb Free Plating Product

The SO-8 package is universally preferred for all

commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC

converters.

Product Summary

BV_DSS(V)

R_DS(ON)(mΩ)

I_D(A)

4.3

-3.6

-35

Pin Descriptions

Pin Assignments

Pin Name

N1G

N1D/P1D

Description

Gate (NMOS1)

Drain(NMOS1) / Drain(PMOS1)

N1G

P1G

N1D/P1D

N1S/N2S

P1S/P2S

N2D/P2D

N1S/N2S Source(NMOS1) / Source(NMOS2)

N2G

P2G

N2D/P2D

Gate (NMOS2)

Gate (PMOS2)

Drain(NMOS2) / Drain(PMOS2)

N2G

P2G

P1S/P2S Source(PMOS1) / Source(PMOS2)

SO-8

P1G

Gate (PMOS1)

Ordering information

A X 9903M X

Packing

Package

S: SO-8

Feature

F :MOSFET

Blank : Tube or Bulk

A : Tape & Reel

Block Diagram

P1S

P2S

P1G

N1G

P2G

P1N1D

P2N2D

N2G

N2S

N1S

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of

this product. No rights under any patent accompany the sale of the product.

Rev. 1.0 Sep 22, 2005

1/8

AF9903M

2N and 2P-Channel Enhancement Mode Power MOSFET

Absolute Maximum Ratings

Symbol

V_DS

V_GS

Parameter

N-Channel P-Channel

Units

Drain-Source Voltage

Gate-Source Voltage

±20

4.3

3.4

-35

±20

-3.6

-2.8

-20

T_A=25ºC

T_A=70ºC

I_D

Continuous Drain Current (Note 1)

I_DM

P_D

Pulsed Drain Current (Note 2)

Total Power Dissipation

T_A=25ºC

1.38

0.01

Linear Derating Factor

W/ºC

ºC

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

ºC

Thermal Data

Symbol

R_θJA

Parameter

Thermal Resistance Junction-Ambient (Note 1)

Value

Units

ºC/W

Max.

Electrical Characteristics (T_J=25ºC unless otherwise specified)

Limits

Symbol

Parameter

Test Conditions

Unit

Min.

Typ. Max.

V_GS=0V, I_D=250uA

V_GS=0V, I_D=-250uA

Reference to 25 ºC,

I_D=1mA

Reference to 25 ºC,

I_D=-1mA

-35

BV_DSSDrain-Source breakdown Voltage

0.03

∆BV_DSS/∆ Breakdown Voltage Temperature

V/ºC

Coefficient

T_J

-0.02

V_GS=10V, I_D=4A

V_GS=4.5V, I_D=3A

V_GS=-10V, I_D=-3A

V_GS=-4.5V, I_D=-2A

V_DS= V_GS, I_D=250uA

V_DS= V_GS, I_D=-250uA

V_DS=10V, I_D=4A

V_DS=-10V, I_D=-3A

100

Static Drain-Source

R_DS(ON)

mΩ

On-Resistance (Note 3)

-1

V_GS(th)

g_fs

Gate-Threshold Voltage

-3

Forward Transconductance

T_J=25ºC V_DS=30V, V_GS=0V

Drain-Source Leakage T_J=70ºC V_DS=24V, V_GS=0V

-1

I_DSS

Current

T_J=25ºC V_DS=-30V, V_GS=0V

T_J=70ºC V_DS=-24V, V_GS=0V

-25

±100

I_GSS

Q_g

Gate-Source Leakage

V_GS=±20V

N-Channel

Total Gate Charge (Note 3)

Gate-Source Charge

V_DS=28V, V_GS=4.5V

I_D=4A

Q_gs

Q_gd

P-Channel

V_DS=-28V, V_GS=-4.5V

I_D=-3A

Gate-Drain (“Miller”) Charge

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Seo 22, 2005

2/8

AF9903M

2N and 2P-Channel Enhancement Mode Power MOSFET

Electrical Characteristics (T_J=25ºC unless otherwise specified)

Limits

Symbol

t_d(on)

t_r

Parameter

Turn-On Delay Time (Note 3)

Rise Time

Test Conditions

Unit

Min.

Typ. Max.

N-Channel

V_DS=15V, V_GS=10V

I_D=1A, R_G=3.3Ω,

R_D=15Ω

P-Channel

t_d(off)

t_f

Turn-Off Delay Time

Fall-Time

V_DS=-15V, V_GS=-10V

I_D=-1A, R_G=3.3Ω,

R_D=15Ω

490

420

130

140

780

N-Channel

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

1100

V_GS=0V, V_DS=25V

f=1.0MHz

P-Channel

_GS=0V, V_DS=-25V

f=1.0MHz

Source-Drain Diode

Limits

Symbol

Parameter

Test Conditions

Unit

Min.

Typ. Max.

I_S=1.2A, V_GS=0V

I_S=-1.2A, V_GS=0V

N-Channel

1.2

V_SD

Forward On Voltage (Note 3)

-1.2

t_rr

Reverse Recovery Time

Reverse Recovery Charge

I_S=4A, V_GS=0V

dl/dt=100A/µs

P-Channel

Q_rr

I_S=-3A, V_GS=0V

dl/dt=-100A/µs

Note 1: Surface Mounted on 1 in²copper pad of FR4 board; t ≤10sec; 186ºC/W when mounted on Min. copper pad.

Note 2: Pulse width limited by Max. junction temperature

Note 3: Pulse width < 300us, duty cycle < 2%.

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Seo 22, 2005

3/8

AF9903M

2N and 2P-Channel Enhancement Mode Power MOSFET

Typical Performance Characteristics (N-Channel)

Anachip Corp.

www.anachip.com.tw

4/8

Rev. 1.0 Seo 22, 2005

AF9903M

2N and 2P-Channel Enhancement Mode Power MOSFET

Typical Performance Characteristics (N-Channel) (Continued)

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Seo 22, 2005

5/8

AF9903M

2N and 2P-Channel Enhancement Mode Power MOSFET

Typical Performance Characteristics (P-Channel)

Anachip Corp.

www.anachip.com.tw

6/8

Rev. 1.0 Seo 22, 2005

AF9903M

2N and 2P-Channel Enhancement Mode Power MOSFET

Typical Performance Characteristics (P-Channel) (Continued)

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Seo 22, 2005

7/8

AF9903M

2N and 2P-Channel Enhancement Mode Power MOSFET

Marking Information

SO-8L

( Top View )

Lot code:

Logo

Part Number

"A~Z": 01~26;

"A~Z": 27~52

9 9 03 M

AA Y W X

Week code:

"A~Z": 01~26;

"A~Z": 27~52

Year code:

"4" =2004

Factory code

Package Information

Package Type: SO-8L

DETAIL A

1. All Dimensions Are in Millimeters.

2. Dimension Does Not Include Mold Protrusions.

Dimensions In Millimeters

Symbol

Min.

1.35

0.10

0.33

0.19

4.80

5.80

3.80

0.38

0^o

Nom.

1.55

Max.

1.75

0.25

0.51

0.25

5.00

6.50

4.00

1.27

8^o

0.18

0.41

0.22

4.90

6.15

3.90

0.71

4^o

1.27 TYP.

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Seo 22, 2005

8/8

AF9903MSA [ANACHIP]

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