AF8510C [ANACHIP]

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET; N和P沟道增强型功率MOSFET


型号：	AF8510C
厂家：	ANACHIP CORP
描述：	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N和P沟道增强型功率MOSFET
文件：	总8页 (文件大小：317K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AF8510C

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

General Description

- Lower On-Resistance

The advanced power MOSFET provides the designer

with the best combination of fast switching,

ruggedized device design, low on-resistance and

costeffectiveness.

- Simple Drive Requirement

- Fast Switching Performance

- Pb Free Plating Product

The SO-8 package is universally preferred for all

commercial-industrial surface mount applications and

suited for low voltage applicat ions such as DC/DC

converters.

Product Summary

BV_DSS(V)

R_DS(ON)(mΩ)

I_D(A)

6.9

-5.3

-30

Pin Descriptions

Pin Assignments

Pin Name

Description

Source (NMOS)

Gate (NMOS)

Drain (NMOS)

Source (PMOS)

Gate (PMOS)

Drain (PMOS)

SO-8

Ordering information

A X 8510C X X

Package

Feature

Packing

F :MOSFET

S: SOP-8

Blank : Tube or Bulk

A : Tape & Reel

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of

this product. No rights under any patent accompany the sale of the product.

Rev. 1.0 Nov 14, 2005

1/8

AF8510C

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Absolute Maximum Ratings

Symbol

V_DS

V_GS

Parameter

N-Channel P-Channel

Units

Drain-Source Voltage

Gate-Source Voltage

±20

6.9

5.5

-30

±20

-5.3

-4.2

-30

T_A=25ºC

T_A=70ºC

I_D

Continuous Drain Current (Note 1)

I_DM

P_D

Pulsed Drain Current (Note 2)

Total Power Dissipation

Linear Deratomg Factor

W/ ºC

ºC

T_A=25ºC

2.0

0.016

T_J, T_STGOperating Junction and Storage Temperature Range

-55 to 150

Thermal Data

Symbol

Rthj-amb

Parameter

Maximum

62.5

Units

ºC/W

Thermal Resistance Junction-ambient (Note 1)

Max.

N-CH Electrical Characteristics at T_J=25ºC unless otherwise specified

Symbol

BV_DSS

Parameter

Test Conditions

Min.

Typ.

Max. Units

Drain-Source Breakdown Voltage V_GS=0V, I_D=250uA

V/^oC

Breakdown Voltage Temperature Reference to 25^oC,

ꢀBV_DSS/ T_J

0.02

Coefficient

I_D=1mA

Static Drain-Source

V_GS=10V, I_D=5A

R_DS(ON)

mΩ

On-Resistance (Note 3)

_GS=4.5V, I_D=3A

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

Drain-Source Leakage Current

(T_J=25^oC)

V_DS=V_GS, I_D=250uA

V_DS=10V, I_D=5A

4.6

V_DS=30V, V_GS=0V

I_DSS

Drain-Source Leakage Current

V_DS=24V, V_GS=0V

(T_J=70^oC)

I_GSS

Q_g

Gate-Source Leakage

Total Gate Charge (Note 3)

Gate-Source Charge

Gate-Drain (“Miller”) Charge

Turn-On Delay Time (Note 3)

Rise Time

V_GS=±20V

I_D=6.9A,

±100

V_DS=24V,

Q_gs

Q_gd

t_d(on)

t_r

_GS=4.5V

V_DS=15V,

I_D=1A,

R_G=3.3Ω, V_GS=10V

t_d(off)

Turn-Off Delay Time

Fall-Time

R_D=15Ω

t_f

C_iss

C_oss

C_rss

Input Capacitance

540

160

120

870

_GS=0V,

V_DS=25V,

f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

Symbol

V_SD

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Forward On Voltage (Note 3)

Reverse Recovery Time

Reverse Recovery Charge

I_S=1.7A, V_GS=0V

I_S=6.9A, V_GS=0V

dl/dt=100A/µs

1.2

t_rr

Q_rr

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Nov 14, 2005

2/8

AF8510C

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

P-CH Electrical Characteristics at T_J=25ºC unless otherwise specified

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

BV_DSS

Drain-Source Breakdown Voltage V_GS=0V, I_D=250uA

-30

ꢀBV_DSS

ꢀT_J

Breakdown Voltage Temperature Reference to 25^oC,

-0.023

V/^oC

Coefficient

I_D=1mA

V_GS=-10V, I_D=-5A

-3

mΩ

_GS=-4.5V, I_D=-3A

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

Drain-Source Leakage Current

(T_J=25^oC)

V_DS=V_GS, I_D=-250uA

V_DS=-10V, I_D=-5A

4.9

V_DS=-30V, V_GS=0V

-1

I_DSS

Drain-Source Leakage Current

V_DS=-24V, V_GS=0V

-25

(T_J=70^oC)

I_GSS

Q_g

Gate-Source Leakage

Total Gate Charge (Note 3)

Gate-Source Charge

Gate-Drain (“Miller”) Charge

Turn-On Delay Time (Note 3)

Rise Time

V_GS=±20V

I_D=-5.3A,

V_DS=-24V,

±100

Q_gs

Q_gd

t_d(on)

t_r

_GS=-4.5V

V_DS=-15V,

I_D=1A,

R_G=3.3Ω, V_GS=-10V

t_d(off)

Turn-Off Delay Time

Fall-Time

Input Capacitance

580

180

120

R_D=15Ω

t_f

C_iss

C_oss

C_rss

930

V_GS=0V,

V_DS=25V,

f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

Symbol

V_SD

Parameter

Test Conditions

I_S=1.7A, V_GS=0V

I_S=-5.3A, V_GS=0V,

dl/dt=100A/µs

Min.

Typ.

Max.

Unit

Forward On Voltage (Note 3)

Reverse Recovery Time)

Reverse Recovery Charge

-1.2

t_rr

Q_rr

Note 1: Surface mounted on 1 in²copper pad of FR4 board; 135^oC/W when mounted on Min. copper pad.

Note 2: Pulse width limited by Max. junction temperature.

Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.

Anachip Corp.

www.anachip.com.tw

3/8

Rev. 1.0 Nov 14, 2005

AF8510C

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Typical Performance Characteristics (N-Channel)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction

Temperature

Fig 5. Forward Characteristic of Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction

Temperature

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Nov 14, 2005

4/8

AF8510C

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Typical Performance Characteristics (N-Channel) (Continued)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operation Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Nov 14, 2005

5/8

AF8510C

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Typical Performance Characteristics (P-Channel) (Continued)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction

Temperature

Fig 5. Forward Characteristic of Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction

Temperature

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Nov 14, 2005

6/8

AF8510C

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Typical Performance Characteristics (P-Channel) (Continued)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operation Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Nov 14, 2005

7/8

AF8510C

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Marking Information

SO-8L

( Top View )

Logo

Part Number

8 5 1 0 C

AA Y W

Week code:

"A~Z": 01~26;

"A~Z": 27~52

Year code:

"4" =2004

Factory code

Package Information

Package Type: SO-8L

VIEW "A"

0.015x45

VIEW "A"

(4X

)

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min.

1.40

0.10

1.30

0.33

0.19

4.80

3.70

Nom.

1.60

Max.

1.75

0.25

1.50

0.51

0.25

5.30

4.10

Min.

Nom.

0.063

Max.

ꢀ

0.055

0.040

0.051

0.013

0.0075

0.189

0.146

0.069

0.100

0.059

0.020

0.010

0.209

0.161

0.244

0.050

0.004

8^O

1.45

0.41

0.20

5.05

3.90

1.27

5.99

0.71

0.057

0.016

0.008

0.199

0.154

0.050

0.236

0.028

5.79

0.38

6.20

1.27

0.10

0.228

0.015

0^O

8^O

0^O

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Nov 14, 2005

8/8

AF8510C [ANACHIP]

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