AF8510CSA [ANACHIP]
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET; N和P沟道增强型功率MOSFET型号: | AF8510CSA |
厂家: | ANACHIP CORP |
描述: | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总8页 (文件大小:317K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Features
General Description
- Lower On-Resistance
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
costeffectiveness.
- Simple Drive Requirement
- Fast Switching Performance
- Pb Free Plating Product
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applicat ions such as DC/DC
converters.
Product Summary
CH
N
BVDSS (V)
30
RDS(ON) (mΩ)
ID (A)
6.9
-5.3
28
55
P
-30
Pin Descriptions
Pin Assignments
Pin Name
Description
Source (NMOS)
Gate (NMOS)
Drain (NMOS)
Source (PMOS)
Gate (PMOS)
Drain (PMOS)
1
2
3
4
8
7
6
5
S1
D1
S1
G1
D1
S2
G2
D2
G1
S2
D1
D2
G2
D2
SO-8
Ordering information
A X 8510C X X
Package
PN
Feature
Packing
F :MOSFET
S: SOP-8
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Nov 14, 2005
1/8
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Absolute Maximum Ratings
Symbol
VDS
VGS
Parameter
N-Channel P-Channel
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
6.9
5.5
30
-30
±20
-5.3
-4.2
-30
V
TA=25ºC
TA=70ºC
ID
Continuous Drain Current (Note 1)
V
IDM
PD
Pulsed Drain Current (Note 2)
Total Power Dissipation
Linear Deratomg Factor
A
W
W/ ºC
ºC
TA=25ºC
2.0
0.016
TJ, TSTG Operating Junction and Storage Temperature Range
-55 to 150
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum
62.5
Units
ºC/W
Thermal Resistance Junction-ambient (Note 1)
Max.
N-CH Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
BVDSS
Parameter
Test Conditions
Min.
30
Typ.
-
Max. Units
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
-
V
V/oC
Breakdown Voltage Temperature Reference to 25oC,
ꢀBVDSS / TJ
-
0.02
-
Coefficient
ID=1mA
Static Drain-Source
VGS=10V, ID=5A
-
-
1
-
-
-
-
28
40
3
RDS(ON)
mΩ
On-Resistance (Note 3)
V
GS=4.5V, ID=3A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(TJ=25oC)
VDS=VGS, ID=250uA
VDS=10V, ID=5A
V
S
4.6
-
VDS=30V, VGS=0V
-
-
1
IDSS
uA
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
25
(TJ=70oC)
IGSS
Qg
Gate-Source Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
Rise Time
VGS=±20V
ID=6.9A,
-
-
-
-
-
-
-
-
-
-
-
-
10
2
±100
nA
nC
16
VDS=24V,
Qgs
Qgd
td(on)
tr
-
V
GS=4.5V
6
-
8
-
VDS=15V,
ID=1A,
7
-
ns
pF
RG=3.3Ω, VGS=10V
td(off)
Turn-Off Delay Time
Fall-Time
20
6
-
RD=15Ω
tf
-
Ciss
Coss
Crss
Input Capacitance
540
160
120
870
V
GS=0V,
VDS=25V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
Min.
Typ.
-
20
11
Max.
Unit
V
Forward On Voltage (Note 3)
Reverse Recovery Time
Reverse Recovery Charge
IS=1.7A, VGS=0V
IS=6.9A, VGS=0V
dl/dt=100A/µs
-
-
-
1.2
trr
Qrr
-
-
ns
nC
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 14, 2005
2/8
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
P-CH Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
-30
-
-
V
ꢀBVDSS
ꢀTJ
/
Breakdown Voltage Temperature Reference to 25oC,
-
-0.023
-
V/oC
Coefficient
ID=1mA
VGS=-10V, ID=-5A
-
-
1
-
-
-
-
55
90
-3
-
mΩ
V
GS=-4.5V, ID=-3A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(TJ=25oC)
VDS=VGS, ID=-250uA
VDS=-10V, ID=-5A
V
S
4.9
VDS=-30V, VGS=0V
-
-
-1
IDSS
uA
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-25
(TJ=70oC)
IGSS
Qg
Gate-Source Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
Rise Time
VGS=±20V
ID=-5.3A,
VDS=-24V,
-
-
-
-
-
-
-
-
-
-
-
-
9
±100
nA
nC
15
Qgs
Qgd
td(on)
tr
2
-
V
GS=-4.5V
6
-
10
8
-
VDS=-15V,
ID=1A,
-
ns
pF
RG=3.3Ω, VGS=-10V
td(off)
Turn-Off Delay Time
Fall-Time
Input Capacitance
25
13
580
180
120
-
RD=15Ω
tf
-
Ciss
Coss
Crss
930
VGS=0V,
VDS=25V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
IS=1.7A, VGS=0V
IS=-5.3A, VGS=0V,
dl/dt=100A/µs
Min.
Typ.
-
21
17
Max.
Unit
V
Forward On Voltage (Note 3)
Reverse Recovery Time)
Reverse Recovery Charge
-
-
-
-1.2
trr
-
-
ns
Qrr
nC
Note 1: Surface mounted on 1 in2 copper pad of FR4 board; 135oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
Anachip Corp.
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3/8
Rev. 1.0 Nov 14, 2005
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Typical Performance Characteristics (N-Channel)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction
Temperature
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction
Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 14, 2005
4/8
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Typical Performance Characteristics (N-Channel) (Continued)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operation Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 14, 2005
5/8
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Typical Performance Characteristics (P-Channel) (Continued)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction
Temperature
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction
Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 14, 2005
6/8
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Typical Performance Characteristics (P-Channel) (Continued)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operation Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 14, 2005
7/8
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Marking Information
SO-8L
( Top View )
8
Logo
Part Number
8 5 1 0 C
AA Y W
Week code:
"A~Z": 01~26;
"A~Z": 27~52
Year code:
1
"4" =2004
Factory code
Package Information
Package Type: SO-8L
L
VIEW "A"
D
0.015x45
VIEW "A"
(4X
(4X
)
7
)
7
e
B
y
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
1.40
0.10
1.30
0.33
0.19
4.80
3.70
-
Nom.
1.60
-
Max.
1.75
0.25
1.50
0.51
0.25
5.30
4.10
-
Min.
Nom.
0.063
-
Max.
A
A1
A2
B
C
D
E
e
H
L
y
ꢀ
0.055
0.040
0.051
0.013
0.0075
0.189
0.146
-
0.069
0.100
0.059
0.020
0.010
0.209
0.161
-
0.244
0.050
0.004
8O
1.45
0.41
0.20
5.05
3.90
1.27
5.99
0.71
-
0.057
0.016
0.008
0.199
0.154
0.050
0.236
0.028
-
5.79
0.38
-
6.20
1.27
0.10
0.228
0.015
-
0O
-
8O
0O
-
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 14, 2005
8/8
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