AF85N03D [ANACHIP]
N-Channel Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | AF85N03D |
| 厂家： | 
ANACHIP CORP |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总5页 (文件大小：416K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AF85N03
N-Channel Enhancement Mode Power MOSFET
Features
General Description
- Low Gate Charge
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters. The through-hole version is available for
low-profile applications.
- Simple Drive Requirement
- Fast Switching
- RoHS Compliant
- Pb Free Plating Product
Product Summary
BVDSS (V)
RDS(ON) (mΩ)
ID (A)
75
30
6
Pin Assignments
Pin Descriptions
(Front View)
Pin Name
Description
Source
Gate
S
3
S
G
D
2
1
D
Drain
G
Ordering information
A X 85N03 X X
Packing
Package
Feature
PN
F :MOSFET
D: TO-252
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
D
S
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 10, 2005
1/5
AF85N03
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
V
VGS
TC=25ºC
75
ID
Continuous Drain Current, VGS=4.5V
A
TC=100ºC
55
IDM
PD
Pulsed Drain Current (Note 1)
Total Power Dissipation
350
A
W
TC=25ºC
107
Linear Derating Factor
0.7
W/ºC
ºC
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
ºC
Thermal Data
Symbol
Parameter
Maximum
1.4
Units
ºC/W
ºC/W
RθJC
RθJA
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Max.
Max.
110
Electrical Characteristics (TJ=25ºC unless otherwise noted)
Limits
Typ.
-
Symbol
Parameter
Test Conditions
Unit
V
Min.
Max.
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
30
-
Breakdown Voltage Temperature
Coefficient
Reference to 25ºC,
ID=1mA
∆BVDSS/∆TJ
-
0.018
-
V/ºC
Static Drain-Source
VGS=10V, ID=45A
VGS=4.5V, ID=30A
VDS= VGS, ID=250uA
VDS=10V, ID=30A
-
-
-
-
-
6
10
3
RDS(ON)
mΩ
On-Resistance (Note 2)
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage
Current(TJ=25ºC)
Drain-Source Leakage
Current(TJ=175ºC)
1
-
V
S
32
-
VDS=30V, VGS=0V
-
-
1
IDSS
uA
VDS=24V, VGS=0V
-
-
500
IGSS
Qg
Gate Source Leakage
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 2)
Rise Time
VGS=±20V
ID=30A
-
-
-
-
-
-
-
-
-
-
-
-
±100
nA
nC
33
52
VDS=24V
Qgs
Qgd
td(on)
tr
7.5
24
-
VGS=4.5V
-
11.2
77
-
VDS=15V
ID=30A
-
nS
pF
RG=3.3Ω, VGS=10V
td(off)
Turn-Off Delay Time
Fall-Time
35
-
RD=0.5Ω
tf
67
-
Ciss
Coss
Crss
Input Capacitance
2700
550
380
4200
V
GS=0V
VDS=25V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Min.
Typ.
-
28
10
Max.
Unit
V
IS=45A, VGS=0V
IS=30A, VGS=0V,
dl/dt=100A/µs
-
-
-
1.3
trr
Qrr
-
-
ns
nC
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
2/5
AF85N03
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
3/5
AF85N03
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
4/5
AF85N03
N-Channel Enhancement Mode Power MOSFET
Marking Information
TO-252
( Top View)
Logo
85N03
Part Number
YYWWX
YY : Year
WW: Nth week
X
: Internal code ( Optional)
Package Information
Package Type: TO-252
D
D1
B1
e
e
R: 0.127~0.381
(0.1mm)
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Dimensions In Millimeters
Symbol
Min.
1.80
0.40
0.40
6.00
4.80
2.20
0.50
5.10
0.50
3.50
-
Nom.
2.30
0.50
0.70
6.50
5.35
2.63
0.85
5.70
1.10
4.00
2.30
0.50
Max.
2.80
0.60
1.00
7.00
5.90
3.05
1.20
6.30
1.70
4.50
-
A2
A3
B1
D
D1
F
F1
E1
E2
E3
e
C
0.35
0.65
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
5/5
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