EM-1711 [AKM]

EM-1711 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC; EM- 1711是一个单一的硅芯片霍尔元件构成和信号处理IC的超小型霍尔效应集成电路
EM-1711
型号: EM-1711
厂家: ASAHI KASEI MICROSYSTEMS    ASAHI KASEI MICROSYSTEMS
描述:

EM-1711 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC
EM- 1711是一个单一的硅芯片霍尔元件构成和信号处理IC的超小型霍尔效应集成电路

文件: 总3页 (文件大小:138K)
中文:  中文翻译
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Monolithic Hall Effect ICsꢀEM-series  
Shipped in packet-tape reel(5000pcs/Reel)  
EM-1711 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC.  
EM-1711  
Bipolar Hall  
Supply Voltage  
Power down  
Function  
Ultra High  
Sensitivity  
Bop1.8mT  
Output  
CMOS  
SMT  
Effect Latch  
1.6~5.5V  
Notice:It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue.  
●Operational Characteristics  
Vout  
H
VoH  
S
Marking  
2
1
Bh  
1:VDD  
2:OUT  
3:PDN  
4:VSS  
L
VOL  
N-pole  
0
S-pole  
N
Brp  
Bop  
Magnetic flux density  
●Absolute Maximum Ratings(Ta=25℃)  
●Functional Block Diagram  
1:VDD  
Item  
Symbol  
Limit  
Unit  
3:PDN  
Switch  
V
V
VDD  
0.1 6.0  
0.1 VDD0.1  
±10  
Supply Voltage  
PDN input voltage  
PDN input current  
Output Current  
Operating Temperature Range  
Storage Temperature Range  
V
in  
2:OUT  
4:VSS  
mA  
mA  
I
in  
I
±0.5  
out  
Topr  
Tstg  
30 ~ +85  
40 ~ +125  
Oscillator Hall  
Chopper  
Schmitt Latch  
Output  
Stage  
Amplifier  
&
Element Stabilizer  
Trigger  
&
Logic  
Timing  
Magnetic q and Electrical CharacteristicsTa=25℃ VDD=3.0V)  
Magnetic Characteristics w(Ta=-30~+85℃ VDD=3.0V)  
Item  
Symbol Conditions  
Min.  
Typ.  
Max.  
Unit  
Parameter  
Symbol  
Conditions  
Min. Typ. Max. Unit  
Supply Voltage  
Operating Point  
Release Point  
H y s t e r e s i s  
PDN input High voltage  
PDN input Low voltage  
Operating Point  
Release Point  
H y s t e r e s i s  
1.6  
5.5  
4.0  
V
mT  
mT  
mT  
V
VDD  
BOP  
BOP  
1.8  
-4.2 -1.5  
3.6  
4.2  
mT  
mT  
mT  
1.8  
1.8  
3.6  
B
rp  
B
4.0  
B
h
rp  
Note) The above specifications are design targets.  
B
h
V
0.7VDD  
VDD 0.4  
IH  
V
0.3  
V
IL  
V
V
Io=0.5mA  
Io=0.5mA  
Output High Voltage  
Output Low Voltage  
OH  
0.4  
1
V
V
OL  
2
μA  
mA  
μA  
μsec  
μsec  
IDD1 PDN=L  
Supply Current1*  
2
2.5  
6
IDD2 PDN=H,Average  
Supply Current2*  
1  
1
I
PDN input Current  
PDN mode transition time1  
PDN mode transition time2  
in  
100  
100  
T
T
1
2
Active→PDN  
PDNActive  
PD  
PD  
1mT=10Gauss]  
*1: Positive(“+) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor BopBrp)  
*2: In case of PDN pin is held at VDD or VSS.  
37  
EM-1711  
•Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the  
advance written approval of our sales staff.  
Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks,  
adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such  
applications is understood to be fully at the risk of the customer using our devices or systems.  
●PackageUnit:mm)  
(For reference only)Land Pattern(Unit:mm)  
c
2.1±0.1  
1.3  
0.50  
0.3  
2
3
1
4
φ0.3  
Sensor center  
0~0.1  
5°  
5°  
0.1  
0.05  
5°  
Note1) The sensor center is located  
ꢀꢀꢀꢀwithin the φ0.3mm circle.  
Note2) The tolerances of dimensions  
ꢀꢀꢀꢀwith no mentions is ±0.1mm.  
Note3) Coplanarity:The differnces between  
ꢀꢀꢀꢀstandoff of terminals are max.0.1mm.  
Note4) The sensor part is located 0.4mm(typ.)  
ꢀꢀꢀꢀfar from marking surface.  
5°  
1.30  
Pin No. Pin Name Function  
g
1
2
3
4
VDD Supply Voltage  
OUT Output Voltage  
PDN  
VSS  
Power Down  
GND  
●Function Timing Chart  
●Application Circuit  
CMOS  
OUTPUT  
VDD  
Bop  
0
Time  
Brp  
OUT  
VDD  
Bypass Capacitor  
0.1μF  
EM-1711  
PDN  
VSS  
PDN  
j
OUT  
CMOS  
INPUT  
GND  
H or L  
T
2~100μs)  
T
2~100μs)  
PD  
PD  
IDD  
T
1~100μs)  
PD  
T
1~100μs)  
PD  
Note1) In power down mode, Output is kept current status.  
Note2) When VDD is supplied ,output settling time after power supply voltage  
exceeds 1.6V is equal to TPD2.  
●Supply Voltage  
●Temparature Dependence of Bop. Brp  
4
6
5
4
3
2
1
0
n
o
p
VDD=3V  
3
2
1
0
1
2
3
4
Bop  
Brp  
40  
20  
0
20  
40  
60  
80  
100  
40  
20  
0
20  
40  
60  
80  
100  
Ambient Temperature℃]  
Ambient Temperature℃]  
38  
IMPORTANT NOTICE  
These products and their specifications are subject to change without notice.  
When you consider any use or application of these products, please make  
inquiries the sales office of Asahi Kasei Microdevices Corporation (AKM) or  
authorized distributors as to current status of the products.  
Descriptions of external circuits, application circuits, software and other related  
information contained in this document are provided only to illustrate the  
operation and application examples of the semiconductor products. You are  
fully responsible for the incorporation of these external circuits, application  
circuits, software and other related information in the design of your  
equipments. AKM assumes no responsibility for any losses incurred by you or  
third parties arising from the use of these information herein. AKM assumes no  
liability for infringement of any patent, intellectual property, or other rights in  
the application or use of such information contained herein.  
Any export of these products, or devices or systems containing them, may  
require an export license or other official approval under the law and  
regulations of the country of export pertaining to customs and tariffs, currency  
exchange, or strategic materials.  
AKM products are neither intended nor authorized for use as critical  
componentsNote1) in any safety, life support, or other hazard related device or  
systemNote2), and AKM assumes no responsibility for such use, except for the  
use approved with the express written consent by Representative Director of  
AKM. As used here:  
Note1) A critical component is one whose failure to function or perform  
may reasonably be expected to result, whether directly or indirectly, in the  
loss of the safety or effectiveness of the device or system containing it,  
and which must therefore meet very high standards of performance and  
reliability.  
Note2) A hazard related device or system is one designed or intended for  
life support or maintenance of safety or for applications in medicine,  
aerospace, nuclear energy, or other fields, in which its failure to function  
or perform may reasonably be expected to result in loss of life or in  
significant injury or damage to person or property.  
It is the responsibility of the buyer or distributor of AKM products, who  
distributes, disposes of, or otherwise places the product with a third party, to  
notify such third party in advance of the above content and conditions, and  
the buyer or distributor agrees to assume any and all responsibility and  
liability for and hold AKM harmless from any and all claims arising from the  
use of said product in the absence of such notification.  
April 4, 2012  

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