AM4498M8R [AITSEMI]
N-CHANNEL FAST SWITCHING MOSFET;型号: | AM4498M8R |
厂家: | AiT Semiconductor |
描述: | N-CHANNEL FAST SWITCHING MOSFET 开关 |
文件: | 总8页 (文件大小:820K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AiT Semiconductor Inc.
AM4498
www.ait-ic.com
MOSFET
N-CHANNEL FAST SWITCHING
DESCRIPTION
FEATURES
The AM4498 is the high cell density trenched N-ch
MOSFETs, which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications.
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
Available in SOP8 Package
The AM4498 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
The AM4498 is available in SOP8 package.
ORDERING INFORMATION
TYPICAL APPLICATION
Package Type
SOP8
Part Number
AM4498M8R
AM4498M8VR
M8
SPQ: 2,500pcs/Reel
V: Halogen free Package
R: Tape & Reel
Note
AiT provides all RoHS products
REV1.0
- DEC 2018 RELEASED -
- 1 -
AiT Semiconductor Inc.
AM4498
www.ait-ic.com
MOSFET
N-CHANNEL FAST SWITCHING
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Source
Source
Source
Gate
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
Drain
Drain
Drain
Drain
REV1.0
- DEC 2018 RELEASED -
- 2 -
AiT Semiconductor Inc.
AM4498
www.ait-ic.com
MOSFET
N-CHANNEL FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS
VDS, Drain-Source Voltage
VGS, Gate-Source Voltage
30V
±20V
TC=25°C
24A
ID, Continuous Drain CurrentNOTE1
TC=100°C
15A
IDM, Pulsed Drain CurrentNOTE2
EAS, Single Pulse Avalanche EnergyNOTE3
IAS, Avalanche Current
175A
80mJ
40A
PD, Total Power DissipationNOTE4
TSTG, Storage Temperature Range
TJ, Operating Junction Temperature Range
3.1W
-55°C ~150°C
-55°C ~150°C
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
THERMAL DATA
Parameter
Symbol
RθJA
Min
Typ
Max
40
Units
°C/W
°C/W
Thermal Resistance Junction-ambientNOTE1 (t≦10s)
-
-
-
-
Thermal Resistance Junction-ambientNOTE1 (Steady State)
75
REV1.0
- DEC 2018 RELEASED -
- 3 -
AiT Semiconductor Inc.
AM4498
www.ait-ic.com
MOSFET
N-CHANNEL FAST SWITCHING
ELECTRICAL CHARACTERISTICS
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source
Symbol
BVDSS
Conditions
VGS=0V, ID=250μA
VGS=10V, ID=20A
VGS=4.5V, ID=15A
VGS=VDS, ID=250μA
VDS=24V, VGS=0V
TJ=25°C
Min
30
-
Typ
Max Units
-
2.4
3
-
V
mΩ
V
3
RDS(ON)
VGS(th)
On-ResistanceNOTE2
-
3.8
2.5
Gate Threshold Voltage
1.2
-
-
-
-
-
1
5
Drain-Source Leakage Current
IDSS
μA
VDS=24V, VGS=0V,
TJ=55°C
Gate-Source Leakage Current
Forward Transconductance
IGSS
gfs
VDS=0V, VGS=±20V
VDS=5V, ID=20A
VDS=0V, VGS=0V,
f=1MHz
-
-
-
±100
nA
S
105
-
Gate Resistance
Rg
-
1.5
-
Ω
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
-
-
-
-
-
-
-
-
-
-
56.9
13.8
23.5
20.1
6.3
-
-
-
-
-
-
-
-
-
-
VDS=15V, VGS=10V,
ID=15A
nC
VDD=15V, VGS=10V,
ns
RG=3.3Ω, ID=1A
Turn-Off Delay Time
Fall Time
td(off)
tf
124.6
15.8
4345
340
Input Capacitance
Ciss
Coss
Crss
VDS=15V,VGS=0V,
f=1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Diode Characteristics
225
VG=VD=0V,
Force Current
VGS=0V, IS=1A,
TJ=25℃
Continuous Source CurrentNOTE1
IS
-
-
-
-
24
A
V
Diode Forward VoltageNOTE2
VSD
1.2
NOTE1: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
NOTE2: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
NOTE3: The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=40A
NOTE4: The power dissipation is limited by 150℃ junction temperature
NOTE5: The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
REV1.0
- DEC 2018 RELEASED -
- 4 -
AiT Semiconductor Inc.
AM4498
www.ait-ic.com
MOSFET
N-CHANNEL FAST SWITCHING
TYPICAL ELECTRICAL CHARACTERISTICS
1.
3.
5.
Typical Output Characteristics
Forward Characteristics of Reverse
Normalized VGS(th) vs. TJ
2.
4.
6.
On-Resistance vs. Gate-Source Voltage
Gate-Charge Characteristics
Normalized RDSON vs.TJ
REV1.0
- DEC 2018 RELEASED -
- 5 -
AiT Semiconductor Inc.
AM4498
www.ait-ic.com
MOSFET
N-CHANNEL FAST SWITCHING
7.
Capacitance
8.
Safe Operating Area
9.
Normalized Maximum Transient Thermal Impedance
10. Switching Time Waveform
11. Unclamped Inductive Switching Waveform
REV1.0
- DEC 2018 RELEASED -
- 6 -
AiT Semiconductor Inc.
AM4498
www.ait-ic.com
MOSFET
N-CHANNEL FAST SWITCHING
PACKAGE INFORMATION
Dimension in SOP8 Package (Unit: mm)
Millimeters
Inches
Symbol
Min.
Max.
1.750
0.250
1.550
0.510
0.250
5.100
6.200
4.000
Min.
Max.
0.069
0.010
0.061
0.020
0.010
0.201
0.244
0.157
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.700
5.800
3.800
0.053
0.004
0.053
0.013
0.007
0.185
0.228
0.150
c
D
E
E1
e
1.270 BSC
0.050 BSC
L
0.400
1.270
0.016
0.050
θ
0°
8°
0°
8°
REV1.0
- DEC 2018 RELEASED -
- 7 -
AiT Semiconductor Inc.
AM4498
www.ait-ic.com
MOSFET
N-CHANNEL FAST SWITCHING
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or server property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- DEC 2018 RELEASED -
- 8 -
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