AM4498M8VR [AITSEMI]

N-CHANNEL FAST SWITCHING MOSFET;


型号：	AM4498M8VR
厂家：	AiT Semiconductor
描述：	N-CHANNEL FAST SWITCHING MOSFET 开关
文件：	总8页 (文件大小：820K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AiT Semiconductor Inc.

AM4498

www.ait-ic.com

MOSFET

N-CHANNEL FAST SWITCHING

DESCRIPTION

FEATURES

The AM4498 is the high cell density trenched N-ch

MOSFETs, which provide excellent R_DSONand gate

charge for most of the synchronous buck converter

applications.



100% EAS Guaranteed

Green Device Available

Super Low Gate Charge

Excellent CdV/dt effect decline

Advanced high cell density Trench technology

Available in SOP8 Package

The AM4498 meet the RoHS and Green Product

requirement, 100% EAS guaranteed with full

function reliability approved.

The AM4498 is available in SOP8 package.

ORDERING INFORMATION

TYPICAL APPLICATION

Package Type

SOP8

Part Number

AM4498M8R

AM4498M8VR

SPQ: 2,500pcs/Reel

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

REV1.0

- DEC 2018 RELEASED -

- 1 -

AiT Semiconductor Inc.

AM4498

www.ait-ic.com

MOSFET

N-CHANNEL FAST SWITCHING

PIN DESCRIPTION

Top View

Pin #

Symbol

Function

Source

Gate

Drain

REV1.0

- DEC 2018 RELEASED -

- 2 -

AiT Semiconductor Inc.

AM4498

www.ait-ic.com

MOSFET

N-CHANNEL FAST SWITCHING

ABSOLUTE MAXIMUM RATINGS

V_DS, Drain-Source Voltage

V_GS, Gate-Source Voltage

30V

±20V

T_C=25°C

24A

I_D, Continuous Drain Current^NOTE1

T_C=100°C

15A

I_DM, Pulsed Drain Current^NOTE2

E_AS, Single Pulse Avalanche Energy^NOTE3

I_AS, Avalanche Current

175A

80mJ

40A

PD, Total Power Dissipation^NOTE4

T_STG, Storage Temperature Range

T_J, Operating Junction Temperature Range

3.1W

-55°C ~150°C

Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and

operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not

implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL DATA

Parameter

Symbol

R_θJA

Min

Typ

Max

Units

°C/W

Thermal Resistance Junction-ambient^NOTE1(t≦10s)

Thermal Resistance Junction-ambient^NOTE1(Steady State)

REV1.0

- DEC 2018 RELEASED -

- 3 -

AiT Semiconductor Inc.

AM4498

www.ait-ic.com

MOSFET

N-CHANNEL FAST SWITCHING

ELECTRICAL CHARACTERISTICS

Parameter

Drain-Source Breakdown Voltage

Static Drain-Source

Symbol

BV_DSS

Conditions

V_GS=0V, I_D=250μA

V_GS=10V, I_D=20A

V_GS=4.5V, I_D=15A

V_GS=V_DS, I_D=250μA

V_DS=24V, V_GS=0V

T_J=25°C

Min

Typ

Max Units

2.4

mΩ

R_DS(ON)

V_GS(th)

On-Resistance^NOTE2

3.8

2.5

Gate Threshold Voltage

1.2

Drain-Source Leakage Current

I_DSS

μA

V_DS=24V, V_GS=0V,

T_J=55°C

Gate-Source Leakage Current

Forward Transconductance

I_GSS

gfs

V_DS=0V, V_GS=±20V

V_DS=5V, I_D=20A

V_DS=0V, V_GS=0V,

f=1MHz

±100

105

Gate Resistance

R_g

1.5

Total Gate Charge (4.5V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Q_g

Q_gs

Q_gd

t_d(on)

t_r

56.9

13.8

23.5

20.1

6.3

V_DS=15V, V_GS=10V,

I_D=15A

V_DD=15V, V_GS=10V,

R_G=3.3Ω, I_D=1A

Turn-Off Delay Time

Fall Time

t_d(off)

t_f

124.6

15.8

4345

340

Input Capacitance

C_iss

C_oss

C_rss

V_DS=15V,V_GS=0V,

f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Diode Characteristics

225

V_G=V_D=0V,

Force Current

V_GS=0V, I_S=1A,

T_J=25℃

Continuous Source Current^NOTE1

I_S

Diode Forward Voltage^NOTE2

V_SD

1.2

NOTE1: The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper.

NOTE2: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

NOTE3: The EAS data shows Max. rating. The test condition is V_DD=25V, V_GS=10V, L=0.1mH, I_AS=40A

NOTE4: The power dissipation is limited by 150℃ junction temperature

NOTE5: The data is theoretically the same as I_Dand I_DM, in real applications, should be limited by total power dissipation.

REV1.0

- DEC 2018 RELEASED -

- 4 -

AiT Semiconductor Inc.

AM4498

www.ait-ic.com

MOSFET

N-CHANNEL FAST SWITCHING

TYPICAL ELECTRICAL CHARACTERISTICS

Typical Output Characteristics

Forward Characteristics of Reverse

Normalized V_GS(th)vs. T_J

On-Resistance vs. Gate-Source Voltage

Gate-Charge Characteristics

Normalized R_DSONvs.T_J

REV1.0

- DEC 2018 RELEASED -

- 5 -

AiT Semiconductor Inc.

AM4498

www.ait-ic.com

MOSFET

N-CHANNEL FAST SWITCHING

Capacitance

Safe Operating Area

Normalized Maximum Transient Thermal Impedance

10. Switching Time Waveform

11. Unclamped Inductive Switching Waveform

REV1.0

- DEC 2018 RELEASED -

- 6 -

AiT Semiconductor Inc.

AM4498

www.ait-ic.com

MOSFET

N-CHANNEL FAST SWITCHING

PACKAGE INFORMATION

Dimension in SOP8 Package (Unit: mm)

Millimeters

Inches

Symbol

Min.

Max.

1.750

0.250

1.550

0.510

0.250

5.100

6.200

4.000

Min.

Max.

0.069

0.010

0.061

0.020

0.010

0.201

0.244

0.157

1.350

0.100

1.350

0.330

0.170

4.700

5.800

3.800

0.053

0.004

0.053

0.013

0.007

0.185

0.228

0.150

1.270 BSC

0.050 BSC

0.400

1.270

0.016

0.050

0°

8°

0°

8°

REV1.0

- DEC 2018 RELEASED -

- 7 -

AiT Semiconductor Inc.

AM4498

www.ait-ic.com

MOSFET

N-CHANNEL FAST SWITCHING

IMPORTANT NOTICE

AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to

discontinue any integrated circuit product or service without notice, and advises its customers to obtain the

latest version of relevant information to verify, before placing orders, that the information being relied on is

current.

AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to

be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT

products in such applications is understood to be fully at the risk of the customer. As used herein may involve

potential risks of death, personal injury, or server property, or environmental damage. In order to minimize

risks associated with the customer's applications, the customer should provide adequate design and

operating safeguards.

AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT

warrants the performance of its products of the specifications applicable at the time of sale.

REV1.0

- DEC 2018 RELEASED -

- 8 -

AM4498M8VR [AITSEMI]

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