AM4501 [AITSEMI]
P & N-CHANNEL MOSFET;
| 型号： | AM4501 |
| 厂家： | 
AiT Semiconductor |
| 描述： | P & N-CHANNEL MOSFET |
| 文件： | 总10页 (文件大小：905K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AiT Semiconductor Inc.
AM4501
www.ait-ic.com
MOSFET
P & N-CHANNEL
DESCRIPTION
FEATURES
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
Low RDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOP8 saves board space
Fast switching speed
High performance trench technology
Available in SOP8 Package
APPLICATIONS
The AM4501 is available in SOP8 package.
LED Application
Portable Equipment
DC-DC Power Management
ORDERING INFORMATION
TYPICAL APPLICATION
Package Type
Part Number
AM4501M8R
AM4501M8VR
SOP8
M8
SPQ: 4,000pcs/Reel
V: Halogen free Package
R: Tape & Reel
Note
AiT provides all RoHS products
REV1.0
- JAN 2019 RELEASED -
- 1 -
AiT Semiconductor Inc.
AM4501
www.ait-ic.com
MOSFET
P & N-CHANNEL
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
1
2
3
4
5
6
7
8
S
G
S
G
D
D
D
D
NMOS Source
NMOS Gate
PMOS Source
PMOS Gate
PMOS Drain
PMOS Drain
NMOS Drain
NMOS Drain
REV1.0
- JAN 2019 RELEASED -
- 2 -
AiT Semiconductor Inc.
AM4501
www.ait-ic.com
MOSFET
P & N-CHANNEL
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted
Parameter
N-Channel P-Channel
Units
V
VDS, Drain-Source Voltage
VGS, Gate-Source Voltage
30
±20
10
-30
±20
-9.0
-6.9
-35
-2.1
2.1
V
TA = 25°C
TA= 70°C
ID, Continuous Drain CurrentNOTE1
IDM, Pulsed Drain CurrentNOTE2
A
7.8
40
A
A
IS, Continuous Source Current (Diode Conduction)NOTE1
TA = 25°C
TA= 70°C
TJ, TSTG, Operating Junction and Storage Temperature Range
3.3
2.1
1.3
PD, Power DissipationNOTE1
W
1.3
−55°C ~ +150°C
°C
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE
Parameter
Symbol
RθJA
Min
Typ
Max Units
t≦10s
-
-
-
-
62.5
°C/W
110
Maximum Junction-to-AmbientNOTE1
Steady-State
NOTE1: Surface Mounted on 1” x 1” FR4 Board.
NOTE2: Pulse width limited by maximum junction temperature
REV1.0
- JAN 2019 RELEASED -
- 3 -
AiT Semiconductor Inc.
AM4501
www.ait-ic.com
MOSFET
P & N-CHANNEL
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted
Limits
Typ
Parameter
Symbol
Conditions
Units
Max
Ch
Min
Static
VGS=VDS, IDS=250μA
VGS=VDS, IDS=-250μA
VGS=-20V, VDS=0V
VGS=20V, VDS=0V
VDS=-24V, VGS=0V
VDS=24V, VGS=0V
VDS=5V, VGS=10V
VDS=-5V, VGS=-10V
VGS=10V IDS=7.1A
VGS=4.5V, IDS=5.8A
VGS=-10V IDS=-6A
VGS=-4.5V, IDS=-4.9A
VDS=15V, ID=6.9A
N
P
P
N
P
N
N
P
1
-
-
3
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
V
-1
-3
-
-
±1000
nA
IGSS
-
-
±1000
-
-
-1
μA
1
Zero Gate Voltage Drain Current
On-State Drain CurrentNOTE3
IDSS
-
-
40
-
-
ID(on)
A
-35
-
-
-
-
-
-
-
-
11
16
21
32
13
8
16
N
P
Drain-source
On-ResistanceNOTE3
22
RDS(ON)
mΩ
26
39
N
P
-
Forward TranconductanceNOTE3
Gfs
S
VDS=-15V, ID=-5.2A
-
DynamicNOTE4
N-Channel
N
P
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16
19
4.9
4.7
3.5
7.7
6
-
-
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
VDS=15V, VGS=10V,
ID=6.9A
N
P
-
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
nC
-
P-Channel
N
P
-
-
-
-
-
VDS=-15V, VGS=-10V,
ID=-5.2A
N
P
N-Channel
6
VDD=15V, VGS=10V,
ID=1A, RGEN=6Ω
P-Channel
N
P
6
Rise Time
5
-
ns
N
P
29
53.6
8
-
Turn-Off Delay Time
td(off)
VDD=-15V, VGS=-10V,
ID=-1A, RGEN=6Ω
-
-
-
N
P
Fall-Time
tf
21
NOTE3: Pulse test: Pulse Width ≦ 300us duty cycle ≦ 2%.
NOTE4: Guaranteed by design, not subject to production testing.
REV1.0 - JAN 2019 RELEASED -
- 4 -
AiT Semiconductor Inc.
AM4501
www.ait-ic.com
MOSFET
P & N-CHANNEL
TYPICAL ELECTRICAL CHARACTERISTICS
P-Channel
1.
3.
5.
On-Resistance vs. Drain Current
On-Resistance vs. Gate-to-Source Voltage
Output Characteristics
2.
4.
6.
Transfer Characteristics
Drain-to-Source Forward Voltage
Capacitance
REV1.0
- JAN 2019 RELEASED -
- 5 -
AiT Semiconductor Inc.
AM4501
www.ait-ic.com
MOSFET
P & N-CHANNEL
7.
Gate Charge
8.
Normalized On-Resistance vs. Junction
Temperature
9.
Safe Operating Area
10. Single Pulse Maximum Power Dissipation
11. Normalized Thermal Transient Junction to Ambient
REV1.0
- JAN 2019 RELEASED -
- 6 -
AiT Semiconductor Inc.
AM4501
www.ait-ic.com
MOSFET
P & N-CHANNEL
N-Channel
12. On-Resistance vs. Drain Current
14. On-Resistance vs. Gate-to-Source Voltage
16. Output Characteristics
13. Transfer Characteristics
15. Source-to-Drain Forward Voltage
17. Capacitance
REV1.0
- JAN 2019 RELEASED -
- 7 -
AiT Semiconductor Inc.
AM4501
www.ait-ic.com
MOSFET
P & N-CHANNEL
18. Gate Charge
19. Normalized On-Resistance vs. Junction
Temperature
20. Safe Operating Area
21. Single Pulse Maximum Power Dissipation
22. Normalized Thermal Transient Junction to Ambient
REV1.0
- JAN 2019 RELEASED -
- 8 -
AiT Semiconductor Inc.
AM4501
www.ait-ic.com
MOSFET
P & N-CHANNEL
PACKAGE INFORMATION
Dimension in SOP8 Package (Unit: mm)
Land Pattern (Only for Reference)
Symbol
Min.
1.35
0.10
0.38
0.19
4.80
3.80
Max.
1.75
0.25
0.51
0.25
5.00
4.00
A
A(1)
B
C
D
E
e
1.27 BSC
H
5.80
0.50
0°
6.20
0.93
8°
L
α
h
0.25
0.50
REV1.0
- JAN 2019 RELEASED -
- 9 -
AiT Semiconductor Inc.
AM4501
www.ait-ic.com
MOSFET
P & N-CHANNEL
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or server property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- JAN 2019 RELEASED -
- 10 -
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