AM3403 [AITSEMI]

P-CHANNEL ENHANCEMENT MODE;
AM3403
型号: AM3403
厂家: AiT Semiconductor    AiT Semiconductor
描述:

P-CHANNEL ENHANCEMENT MODE

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AM3403  
MOSFET  
AiT Semiconductor Inc.  
www.ait-ic.com  
P-CHANNEL ENHANCEMENT MODE  
DESCRIPTION  
FEATURES  
The AM3403 is available in SOT-23S package.  
-30V/-3.2A, RDS(ON)=55mΩ(MAX) @VGS=-10V.  
DS(ON)=70mΩ(MAX) @VGS=-4.5V.  
DS(ON)=120mΩ(MAX) @VGS=-2.5V.  
R
R
Super High dense cell design for extremely low  
RDS(ON)  
Reliable and Rugged  
Available in SOT-23S Package  
ORDERING INFORMATION  
APPLICATION  
Power Management  
Package Type  
Part Number  
AM3403E3SR  
AM3403E3SVR  
Portable Equipment and Battery Powered  
Systems.  
SOT-23S  
E3S  
SPQ: 3,000pcs/Reel  
PIN DESCRIPTION  
V: Halogen free Package  
R: Tape & Reel  
Note  
AiT provides all RoHS products  
REV1.0  
- JUN 2018 RELEASED -  
- 1 -  
AM3403  
MOSFET  
AiT Semiconductor Inc.  
www.ait-ic.com  
P-CHANNEL ENHANCEMENT MODE  
PIN DESCRIPTION  
Top View  
Pin #  
Symbol  
Function  
Gate  
1
2
3
G
S
D
Source  
Drain  
REV1.0  
- JUN 2018 RELEASED -  
- 2 -  
AM3403  
MOSFET  
AiT Semiconductor Inc.  
www.ait-ic.com  
P-CHANNEL ENHANCEMENT MODE  
ABSOLUTE MAXIMUM RATINGS  
TA= 25, unless otherwise noted  
VDS, Drain-Source Voltage  
-30V  
±12V  
-3.2A  
VGS, Gate-Source Voltage  
ID, Drain Current- Continuous  
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and  
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not  
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  
ELECTRICAL CHARACTERISTICS  
TA=25, unless otherwise noted  
Parameter  
Off Characteristics  
Symbol  
Conditions  
Min  
Typ.  
Max  
Units  
Drain to Source Breakdown  
Voltage  
BVDSS  
IDSS  
VGS=0V, ID=-250μA  
VDS=-24V, VGS=0V  
VGS=12V, VDS=0V  
-30  
-
-
-
-
V
Zero-Gate Voltage Drain Current  
Gate Body Leakage Current,  
Forward  
-
-
-1  
μA  
nA  
IGSSF  
100  
Gate Body Leakage Current,  
Reverse  
IGSSR  
VGS=-12V, VDS=0V  
-
-
-100  
nA  
On Characteristics  
Gate Threshold Voltage  
VGS(th)  
VGS=VDS, ID=-250μA  
-0.7  
-
-1.3  
55  
V
VGS=-10V, ID=-3.2A  
-
-
-
50  
60  
80  
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-3.0A  
VGS=-2.5V, ID=-1.0A  
70  
mΩ  
120  
Drain-Source Diode Characteristics and Maximum Ratings  
Diode-Source Diode Forward  
VSD  
VGS=0V, IS=1.0A  
-
-
-1.0  
V
Voltage  
REV1.0  
- JUN 2018 RELEASED -  
- 3 -  
AM3403  
MOSFET  
AiT Semiconductor Inc.  
www.ait-ic.com  
P-CHANNEL ENHANCEMENT MODE  
TYPICAL CHARACTERISTICS  
1.  
3.  
5.  
On-Region Characteristics  
2.  
4.  
6.  
Transfer Characteristics  
On-Resistance vs. Drain Current and Gate Voltage  
On-Resistance vs. Junction Temperature  
On-Resistance vs. Gate-Source Voltage  
Body-Diode Characteristics  
REV1.0  
- JUN 2018 RELEASED -  
- 4 -  
AM3403  
MOSFET  
AiT Semiconductor Inc.  
www.ait-ic.com  
P-CHANNEL ENHANCEMENT MODE  
PACKAGE INFORMATION  
Dimension in SOT-23S (Unit: mm)  
REV1.0  
- JUN 2018 RELEASED -  
- 5 -  
AM3403  
MOSFET  
AiT Semiconductor Inc.  
www.ait-ic.com  
P-CHANNEL ENHANCEMENT MODE  
IMPORTANT NOTICE  
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to  
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the  
latest version of relevant information to verify, before placing orders, that the information being relied on is  
current.  
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to  
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT  
products in such applications is understood to be fully at the risk of the customer. As used herein may involve  
potential risks of death, personal injury, or server property, or environmental damage. In order to minimize  
risks associated with the customer's applications, the customer should provide adequate design and  
operating safeguards.  
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT  
warrants the performance of its products of the specifications applicable at the time of sale.  
REV1.0  
- JUN 2018 RELEASED -  
- 6 -  

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