MSA-0600-GP4 [AGILENT]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA-0600-GP4 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0600
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
Features
Chip Outline[1]
• Cascadable 50 Ω Gain Block
• Low Operating Voltage
(3.5 V typical V d)
The MSA-series is fabricated using
• 3 dB Bandwidth:
HP’s10GHzf ,25 GHzf
,
T
MAX
DC to 1.0 GHz
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
• High Gain:
19.5dBTypicalat0.5 GHz
• Low Noise Figure:
2.8 dBTypicalat0.5 GHz
Description
The MSA-0600 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section “Silicon MMIC Chip Use” for
additional information.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
[1]
wire. See APPLICATIONS
section, “Chip Use”.
Typical Biasing Configuration
R
bias
VCC > 5 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 3.5 V
d
2
5965-9583E
6-362
MSA-0600 Absolute Maximum Ratings
Parameter
Thermal Resistance[2,4]
:
AbsoluteMaximum[1]
θjc =50°C/W
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Notes:
50 mA
200mW
+13dBm
200°C
–65to200°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting Surface (TMS)= 25°C.
3. Derateat20mW/°CforTMounting Surface >190°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions[2]: Id = 16 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
Gain Flatness
f=0.1GHz
dB
dB
20.5
± 0.7
1.0
∆GP
f3 dB
f=0.1to0.6GHz
3 dB Bandwidth
GHz
Input VSWR
f=0.1to1.5GHz
f=0.1to1.5GHz
f=0.5GHz
1.9:1
1.8:1
2.8
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=0.5GHz
2.0
f=0.5GHz
14.5
200
3.5
tD
f=0.5GHz
Vd
Device Voltage
3.1
3.9
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Notes:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0600-GP4
100
6-363
MSA-0600 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.05
.07
.09
.11
.13
.15
.19
.25
.32
.40
.45
.49
.51
.51
.51
.51
–148
–134
–125
–121
–120
–119
–121
–123
–134
–149
–157
–171
–174
179
20.6
20.4
20.2
20.0
19.7
19.4
18.7
17.9
15.7
13.5
11.6
9.9
10.66 173
10.48 166
10.28 159
10.01 151
9.71 145
9.34 140
8.60 123
7.82 117
–23.3
–23.1
–22.6
–22.4
–22.1
–21.8
–20.7
–19.8
–18.3
–17.4
–16.9
–16.6
–16.4
–16.3
–16.0
–15.9
.068
.070
.074
.076
.078
.081
.092
.102
.122
.136
.142
.148
.152
.153
.159
.161
4
8
.05
.09
.13
.16
.20
.22
.25
.28
.29
.26
.23
.19
.16
.12
.10
.11
–67
–91
1.05
1.04
1.01
1.00
0.98
0.97
0.93
0.90
0.89
0.91
0.97
1.03
1.10
1.22
1.31
1.41
13
15
17
20
25
26
29
27
30
28
25
26
24
24
–102
–110
–117
–124
–136
–148
–168
175
6.10
4.73
3.79
3.12
2.60
2.21
1.93
1.71
96
79
70
61
51
43
37
29
169
168
8.3
173
6.9
–170
–149
–126
170
5.7
162
4.7
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
21
25
20
15
10
5
21
20
0.1 GHz
0.5 GHz
18
Gain Flat to DC
19
18
1.0 GHz
15
12
G
P
17
5
2.0 GHz
5
9
NF
P
4
3
4
3
6
3
0
1 dB
2
1
2
1
0
0
0
0.1
0.3 0.5
1.0
3.0 6.0
10
15
20
I
25
(mA)
30
–55–25
+25
+85
+125
FREQUENCY (GHz)
TEMPERATURE (°C)
d
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 16 mA.
Figure 2. Power Gain vs. Current.
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 0.5 GHz, Id = 16 mA.
12
4.0
3.5
I
I
= 30 mA
d
8
= 20 mA
= 16 mA
d
4
0
3.0
2.5
I
d
d
I
I
I
= 12 mA
d
d
d
= 16 mA, 30 mA
= 20 mA
I
= 12 mA
-4
2.0
0.1
0.2 0.3 0.5
1.0
2.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-364
MSA-0600 Chip Dimensions
INPUT
300 µm
12.8 mil
GROUND
300 µm
12.8 mil
6-365
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