MSA-0520 [AGILENT]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA-0520 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0520
BeO disk package for good
Features
200 mil BeO Package
thermal characteristics. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
• Cascadable 50 Ω Gain Block
• High Output Power:
+23 dBm Typical P1 dB at
1.0 GHz
• LowDistortion:
33dBmTypicalIP3 at1.0 GHz
• 8.5 dB Typical Gain at
1.0 GHz
The MSA-series is fabricated using
HP’s10GHzf ,25 GHzf
,
T
MAX
• Hermetic Metal/Beryllia
Microstrip Package
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Description
The MSA-0520 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
Typical Biasing Configuration
R
bias
VCC > 15 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 12 V
d
2
5965-9582E
6-358
MSA-0520 Absolute Maximum Ratings
Thermal Resistance[2,4]
:
Parameter
AbsoluteMaximum[1]
θjc =25°C/W
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Notes:
225mA
3.0W
+25dBm
200°C
–65to200°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE =25°C.
3. Derate at 40 mW/°C for TC > 125°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 165 mA, ZO = 50 Ω
Units Min. Typ. Max.
P1 dB
GP
Output Power at 1 dB Gain Compression
PowerGain(|S21|2)
Gain Flatness
f=1.0GHz
dBm
dB
21.0
7.5
23.0
8.5
f=0.1GHz
9.5
∆GP
f3 dB
f=0.1to2.0GHz
dB
± 0.75
2.8
3 dB Bandwidth[2]
GHz
Input VSWR
f=0.1to2.0GHz
f=0.1to2.0GHz
f=1.0GHz
2.0:1
2.5:1
33.0
6.5
VSWR
Output VSWR
IP3
Third Order Intercept Point
50 Ω Noise Figure
dBm
dB
NF50 Ω
tD
f=1.0GHz
Group Delay
f=1.0GHz
psec
V
170
Vd
Device Voltage
10.5
12.0
–16.0
13.5
dV/dT
Device Voltage Temperature Coefficient
mV/°C
Notes:
1. The recommended operating current range for this device is 80 to 200 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 0.1 GHz Gain (GP).
6-359
MSA-0520 Typical Scattering Parameters (TA = 25°C, Id = 165 mA)
S11
S21
S12
S22
Freq.
MHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
5
25
.57
.25
.15
.11
.10
.10
.11
.13
.15
.22
.30
.37
.41
.45
.46
–38
–90
14.4
10.7
9.5
8.9
8.8
8.7
8.6
8.5
8.4
8.0
7.4
6.7
5.6
4.5
3.3
5.25 165
3.42 160
2.97 163
2.80 166
2.75 163
2.72 152
2.70 140
2.67 128
2.64 115
–19.4
–14.9
–14.4
–14.2
–14.1
–14.1
–14.0
–14.1
–14.1
–13.7
–13.3
–12.9
–12.7
–12.1
–11.7
.107
.180
.190
.195
.197
.198
.199
.199
.198
.206 –12
.216 –16
.227 –18
.232 –23
.249 –31
.259 –39
38
17
9
.67
.29
.18
.11
.10
.14
.18
.22
.27
.34
.43
.48
.51
.55
.56
–35
–81
–97
0.57
0.93
1.10
1.16
1.17
1.16
1.14
1.12
1.09
0.98
0.85
0.75
0.70
0.63
0.66
50
–111
–138
–152
–152
–147
–142
–140
–142
–156
–170
170
100
3
–113
–125
–123
–123
–127
–131
–143
–158
–166
–177
173
200
1
400
–2
–4
–6
–8
600
800
1000
1500
2000
2500
3000
3500
4000
2.52
2.36
2.16
1.91
85
55
33
8
149
124
1.68 –16
1.45 –40
162
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
10
200
150
100
50
36
32
T
T
T
= +100°C
= +25°C
= –50°C
C
C
C
8
IP
3
0.1 GHz
0.5 GHz
28
24
6
1.0 GHz
1.5 GHz
4
2.0 GHz
P
1 dB
2
20
16
0
0
0
3
6
9
12
15
14 16 18 20 22
24 26 28 30
80
120
160
200
V
(V)
I
(mA)
POWER OUT (dBm)
d
d
Figure 1. Typical Gain vs. Power Out,
A = 25°C, Id = 165 mA.
Figure 3. Output Power at 1 dB Gain
Compression, Third Order Intercept
vs. Current, f = 1.0 GHz.
Figure 2. Device Current vs. Voltage.
T
28
26
24
22
20
10
8
4
3
0.5 GHz
1.0 GHz
Output
6
2
4
Input
1
I
I
I
= 200 mA
= 165 mA
= 80 mA
d
d
d
2
0
18
16
2.0 GHz
-50
+25
+100
4.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
0.1
0.2 0.3 0.5
1.0
2.0
CASE TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY, (GHz)
Figure 5. Gain vs. Frequency.
Figure 6. VSWR vs. Frequency,
Id = 165 mA.
Figure 4. Output Power @ 1 dB Gain
Compression vs. Temperature,
Id = 165 mA.
6-360
200 mil BeO Package Dimensions
4
GROUND
.300 ± .025
7.62 ± .64
.030
.76
45°
3
1
RF INPUT
NO REFERENCE
GROUND
RF OUTPUT
AND BIAS
Notes:
(unless otherwise specified)
1. Dimensions are
in
mm
2
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.060
1.52
3. Base of package is
electrically isolated.
.048 ± .010
1.21 ± .25
.004 ± .002
.10 ± .05
.128
3.25
.205
5.21
.023
.57
6-361
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0MHz - 700MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, LEAD FREE, PLASTIC, SOT-143, 4 PIN
AVAGO
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