ATF-521P8-TR2G [AGILENT]
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8;
| 型号： | ATF-521P8-TR2G |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 PC |
| 文件： | 总24页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Agilent ATF-521P8 High Linearity
Enhancement Mode[1]
Pseudomorphic HEMT in
2x2 mm2 LPCC[3] Package
Data Sheet
Features
• Single voltage operation
• High linearity and P1dB
• Low noise figure
Pin Connections and
Package Marking
Description
• Excellent uniformity in product
specifications
Agilent Technologies’s ATF-521P8 is a
single-voltage high linearity, low noise
E-pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier
(LPCC[3]) package. The device is ideal
as a medium-power, high-linearity am-
plifier. Its operating frequency range
is from 50 MHz to 6 GHz.
Pin 8
Pin 7 (Drain)
Pin 6
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
• Small package size:
2.0 x 2.0 x 0.75 mm3
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
Pin 5
Pin 4 (Source)
Bottom View
• Tape-and-reel packaging option
The thermally efficient package mea-
sures only 2mm x 2mm x 0.75mm. Its
backside metalization provides excel-
lent thermal dissipation as well as vi-
sual evidence of solder reflow. The
device has a Point MTTF of over 300
years at a mounting temperature of
+85°C. All devices are 100% RF & DC
tested.
available
Pin 1 (Source)
Pin 8
Specifications
Pin 2 (Gate)
Pin 3
Pin 7 (Drain)
Pin 6
2Px
2 GHz; 4.5V, 200 mA (Typ.)
• 42 dBm output IP3
Pin 4 (Source)
Pin 5
Top View
• 26.5 dBm output power at 1 dB gain
compression
Note:
Package marking provides orientation and
identification
• 1.5 dB noise figure
• 17 dB Gain
“2P” = Device Code
• 12.5 dB LFOM[4]
“x” = Month code indicates the month of
manufacture.
Note:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
Applications
• Front-end LNA Q2 and Q3, driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
2. Refer to reliability datasheet for detailed
MTTF data
3. Conform to JEDEC reference outline MO229
for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
• Driver amplifier for WLAN,
WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT
for other high linearity applications
ATF-521P8 Absolute Maximum Ratings[1]
Notes:
Absolute
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
Symbol
Parameter
Units
Maximum
VDS
VGS
Drain –Source Voltage[2]
Gate–Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
V
7
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C.
Derate 22 mW/°C for TB > 83°C.
4. Channel to board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
5. Device can safely handle +27dBm RF Input
Power provided IGS is limited to 46mA. IGS
V
-5 to 1
-5 to 1
500
VGD
IDS
V
mA
mA
W
IGS
Gate Current
46
Pdiss
Pin max.
TCH
Total Power Dissipation[3]
RF Input Power
1.5
at P
drive level is bias circuit dependent.
1dB
dBm
°C
27
Channel Temperature
Storage Temperature
Thermal Resistance[4]
150
TSTG
θch_b
°C
-65 to 150
45
°C/W
Product Consistency Distribution Charts[5, 6]
150
120
90
60
30
0
180
150
120
90
600
500
400
300
200
100
Stdev = 0.19
Cpk = 0.86
Stdev = 1.32
0.8V
0.7V
-3 Std
+3 Std
-3 Std
+3 Std
Vgs = 0.6V
60
30
0.5V
0.4V
0
0
0
41
1
37
39
43
45
47
49
0
0.5
1.5
2
2.5
3
2
4
6
8
OIP3 (dBm)
NF (dB)
V
DS
(V)
Figure 3. OIP3 @ 2 GHz, 4.5 V, 200 mA.
Nominal = 41.9 dBm, LSL = 38.5 dBm.
Figure 2. NF @ 2 GHz, 4.5 V, 200 mA.
Nominal = 1.5 dB.
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
180
150
120
90
300
Cpk = 2.13
Stdev = 0.21
Cpk = 4.6
Stdev = 0.11
250
200
-3 Std
+3 Std
-3 Std
+3 Std
150
100
50
60
30
0
0
17
GAIN (dB)
26
P1dB (dBm)
15
16
18
19
25
25.5
26.5
27
27.5
Figure 4. Gain @ 2 GHz, 4.5 V, 200 mA.
Nominal = 17.2 dB, LSL = 15.5 dB,
USL = 18.5 dB.
Figure 5. P1dB @ 2 GHz, 4.5 V, 200 mA.
Nominal = 26.5 dBm, LSL = 25 dBm.
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated
to this product may have nominal values anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
2
ATF-521P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Vth
Idss
Gm
Operational Gate Voltage
Threshold Voltage
Vds = 4.5V, Ids = 200 mA
Vds = 4.5V, Ids = 16 mA
Vds = 4.5V, Vgs = 0V
V
—
—
—
—
0.62
0.28
14.8
1300
—
—
—
—
V
Saturated Drain Current
Transconductance
µA
Vds = 4.5V, Gm = ∆Idss/∆Vgs;
Vgs = Vgs1 - Vgs2
mmho
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss
NF
Gate Leakage Current
Noise Figure[1]
Vds = 0V, Vgs = -4V
µA
-20
0.49
—
f = 2 GHz
f = 900 MHz
dB
dB
—
—
1.5
1.2
—
—
G
Gain [1]
f = 2 GHz
f = 900 MHz
dB
dB
15.5
—
17
17.2
18.5
—
OIP3
P1dB
PAE
Output 3rd Order
Intercept Point[1]
f = 2 GHz
f = 900 MHz
dBm
dBm
38.5
—
42
42.5
—
—
Output 1dB
Compressed[1]
f = 2 GHz
f = 900 MHz
dBm
dBm
25
—
26.5
26.5
—
—
Power Added Efficiency
f = 2 GHz
f = 900 MHz
%
%
45
—
60
56
—
—
ACLR
Notes:
Adjacent Channel Leakage
Power Ratio[1,2]
Offset BW = 5 MHz
Offset BW = 10 MHz
dBc
dBc
—
—
-51.4
-61.5
—
—
1. Measurements obtained using production test board described in Figure 6.
2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
– Test Model 1
– Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
– Freq = 2140 MHz
– Pin = -5 dBm
– Chan Integ Bw = 3.84 MHz
50 Ohm
Input
Output
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Input
Output
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Matching Circuit
Γ_mag = 0.55
Γ_ang = -166°
(1.1 dB loss)
Matching Circuit
Γ_mag = 0.35
Γ_ang = 168°
(0.9 dB loss)
DUT
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a
trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3
1 pF
3.9 nH
1.5 pF
110 Ohm
.03 λ
50 Ohm
.02 λ
50 Ohm
.02 λ
110 Ohm
.03 λ
1.5 pF
RF Output
RF Input
DUT
12 nH
47 nH
15 Ohm
2.2 µF
Drain
Supply
2.2 µF
Gate
Supply
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a Maury load pull system at
4.5V, 200 mA quiesent bias:
Optimum OIP3
Freq
(GHz)
Gamma Source
Mag Ang (deg)
Gamma Load
OIP3
(dBm)
Gain
(dB)
P1dB
(dBm)
PAE
(%)
Mag
Ang (deg)
0.9
2
0.413
0.368
0.318
0.463
10.5
0.314
0.538
0.566
0.495
179.0
42.7
42.5
42.0
40.3
16.0
15.8
14.1
9.6
27.0
27.5
27.4
27.3
54.0
55.3
53.5
43.9
162.0
169.0
-134.0
-176.0
-169.0
-159.0
2.4
3.9
Optimum P1dB
Freq
(GHz)
Gamma Source
Mag Ang (deg)
Gamma Load
OIP3
(dBm)
Gain
(dB)
P1dB
(dBm)
PAE
(%)
Mag
Ang (deg)
0.9
2
0.587
0.614
0.649
0.552
12.7
0.613
0.652
0.682
0.670
-172.1
-172.5
-171.5
-151.2
39.1
39.5
40.0
38.1
14.5
12.9
12.0
9.6
29.3
29.3
29.4
27.9
49.6
49.5
46.8
39.1
126.1
145.0
-162.8
2.4
3.9
4
ATF-521P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
50
45
40
35
30
25
20
15
10
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
4.5V
4V
3V
4.5V
4V
3V
4.5V
4V
3V
100
150
200
250
300
350
400
100
150
200
250
300
350
400
100
150
200
250
300
350
400
I
(mA)
I
(mA)
d
I
d
(mA)
d
Figure 10. OIP3 vs. I and V at 3.9 GHz.
Figure 8. OIP3 vs. I and V at 2 GHz.
Figure 9. OIP3 vs. I and V at 900 MHz.
ds
ds
ds
ds
ds
ds
35
30
25
20
15
10
35
30
25
20
15
10
35
30
25
20
15
10
4.5V
4V
3V
4.5V
4V
3V
4.5V
4V
3V
100
150
200
250
300
350
400
100
150
200
250
300
350
400
100
150
200
250
(mA)
300
350
400
I
(mA)
I
(mA)
I
dq
dq
dq
Figure 11. P1dB vs. I and V at 2 GHz.
Figure 12. P1dB vs. I and V at 900 MHz.
Figure 13. P1dB vs. I and V at 3.9 GHz.
dq
ds
dq
ds
dq
ds
17
16
15
14
13
12
11
10
17
16
15
14
13
12
11
10
12
11
10
9
8
7
4.5V
4V
3V
4.5V
4V
3V
4.5V
4V
3V
6
5
100
100
150
200
250
(mA)
300
350
400
100
150
200
250
(mA)
300
350
400
150
200
250
(mA)
300
350
400
I
I
I
d
d
d
Figure 15. Small Signal Gain vs I and V
ds
Figure 16. Small Signal Gain vs I and V
ds
Figure 14. Small Signal Gain vs I and V
ds
ds
ds
ds
at 900 MHz.
at 3.9 GHz.
at 2 GHz.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.
5
ATF-521P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
70
50
45
40
35
30
25
20
15
10
70
60
50
40
30
20
10
60
50
40
30
20
10
4.5V
4V
3V
4.5V
4V
3V
4.5V
4V
3V
100
150
200
250
300
350
400
100
150
200
250
300
350
400
100
150
200
250
300
350
400
I
(mA)
I
(mA)
I
(mA)
dq
dq
dq
Figure 18. PAE @ P1dB vs. I and V
dq
Figure 17. PAE @ P1dB vs. I and V
dq
Figure 19. PAE @ P1dB vs. I and V
dq
ds
ds
ds
at 900 MHz.
at 2 GHz.
at 3.9 GHz.
20
50
45
40
35
30
29
27
25
23
21
15
10
85°C
25°C
-40°C
85°C
25°C
-40°C
85°C
25°C
-40°C
25
20
15
19
17
15
5
0
0.5
1
1.5
2
2.5
3
3.5
4
0.5
1
1.5
2
2.5
3
3.5
4
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 22. Gain vs. Temp and Freq
tuned for optimal OIP3 at 4.5V, 200 mA.
Figure 20. OIP3 vs. Temp and Freq
tuned for optimal OIP3 at 4.5V, 200 mA.
Figure 21. P1dB vs. Temp and Freq
tuned for optimal OIP3 at 4.5V, 200 mA.
70
60
50
40
30
85°C
20
25°C
-40°C
10
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 23. PAE vs Temp and Freq
tuned for optimal OIP3 at 4.5V, 200 mA.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.
6
ATF-521P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal P1dB
45
40
35
30
25
20
15
10
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
4.5V
4.5V
4V
3V
4.5V
4V
3V
4V
3V
3V
100
400
100
150
200
250
300
350
400
150
200
250
300
350
100
150
200
250
300
350
400
I
(mA)
I
(mA)
I
d
(mA)
d
d
Figure 25. OIP3 vs. I and V at 900 MHz.
Figure 24. OIP3 vs. I and V at 2 GHz.
Figure 26. OIP3 vs. I and V at 3.9 GHz.
ds
ds
ds
ds
ds
ds
35
30
25
20
15
10
35
30
25
20
15
10
35
30
25
20
15
10
4.5V
4V
3V
4.5V
4V
3V
4.5V
4V
3V
200
300
100
150
200
250
(mA)
300
350
400
100
150
200
250
(mA)
300
350
400
100
150
250
(mA)
350
400
I
I
I
dq
dq
dq
Figure 29. P1dB vs. I and V at 3.9 GHz.
Figure 27. P1dB vs. I and V at 2 GHz.
Figure 28. P1dB vs. I and V at 900 MHz.
dq
ds
dq
ds
dq
ds
17
15
13
11
9
17
15
13
11
9
17
15
13
11
9
4.5V
4V
3V
4.5V
4V
3V
4.5V
4V
3V
7
7
7
5
100
5
100
5
150
200
250
(mA)
300
350
400
150
200
250
(mA)
300
350
400
100
150
200
250
(mA)
300
350
400
I
I
I
d
d
d
Figure 30. Gain vs I and V at 2 GHz.
Figure 31. Gain vs I and V at 900 MHz.
Figure 32. Gain vs I and V at 3.9 GHz.
ds ds
ds
ds
ds
ds
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.
7
ATF-521P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
Tuned for Optimal P1dB
55
50
45
40
35
30
25
20
40
35
30
25
20
60
55
50
45
40
35
30
25
20
4.5V
4V
3V
4.5V
4V
3V
4.5V
4V
3V
300
100
150
200
250
300
350
400
100
150
200
250
350
400
100
150
200
250
300
350
400
I
(mA)
I
(mA)
dq
I
(mA)
dq
dq
Figure 34. PAE @ P1dB vs. I and V
dq
Figure 35. PAE @ P1dB vs. I and V
dq
Figure 33. PAE @ P1dB vs. I and V
dq
ds
ds
ds
at 900 MHz.
at 3.9 GHz.
at 2 GHz.
32
30
28
26
24
50
45
40
35
30
20
15
10
85°C
25°C
-40°C
85°C
25°C
-40°C
85°C
25
20
15
5
0
25°C
-40°C
22
20
2.5
FREQUENCY (GHz)
0.5
2
2.5
3
3.5
4
0.5
1.5
2
3
3.5
4
1
1
1.5
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 36. OIP3 vs. Temp and Freq
tuned for optimal P1dB at 4.5V, 200 mA.
Figure 37. P1dB vs. Temp and Freq
(tuned for optimal P1dB at 4.5V, 200 mA).
Figure 38. Gain vs. Temp and Freq
tuned for optimal P1dB at 4.5V, 200 mA.
60
50
40
30
20
10
0
85°C
25°C
-40°C
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 39. PAE vs Temp and Freq
tuned for optimal P1dB at 4.5V.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.
8
ATF-521P8 Typical Scattering Parameters at 25°C, VDS = 4.5V, IDS = 280 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag. Ang.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.613
0.780
0.831
0.855
0.860
0.878
0.888
0.887
0.894
0.886
0.892
0.883
0.890
0.884
0.890
0.893
0.896
0.906
0.882
0.887
0.887
0.882
0.878
0.894
0.888
0.884
0.830
0.708
0.790
-96.9
-131.8
-147.2
-156.4
-162.0
-166.7
-170.2
-172.6
-174.5
-177.2
175.0
168.7
162.8
157.2
146.6
137.0
127.9
119.5
105.6
96.4
33.2
30.0
27.3
25.1
23.5
22.0
20.8
19.7
18.7
17.9
14.3
12.1
10.2
8.6
45.79
31.50
23.26
18.04
14.98
12.62
10.95
9.63
8.65
7.82
5.20
4.01
3.24
2.71
2.02
1.60
1.31
1.11
0.92
0.82
0.72
0.64
0.56
0.48
0.42
0.38
0.34
0.35
141.7
121.6
111.0
104.1
99.7
95.6
92.8
90.0
87.9
85.4
76.3
68.4
61.5
54.5
40.6
27.6
15.4
3.7
-39.5
-36.7
-36.2
-35.4
-35.2
-35.0
-34.6
-34.3
-33.7
-33.8
-32.8
-31.2
-30.0
-28.9
-27.0
-25.5
-24.2
-22.9
-21.3
-20.1
-19.3
-18.5
-18.0
-17.8
-17.3
-16.6
-16.1
-15.4
-16.4
0.011
0.015
0.015
0.017
0.017
0.018
0.019
0.019
0.021
0.020
0.023
0.027
0.032
0.036
0.045
0.053
0.061
0.071
0.086
0.098
0.109
0.119
0.126
0.130
0.137
0.147
0.156
0.169
0.152
51.3
37.1
30.6
28.2
27.4
26.1
27.4
28.9
28.5
30.3
34.6
36.7
36.8
39.2
36.1
32.4
28.2
22.9
14.5
7.2
0.317
0.423
0.466
0.483
0.488
0.496
0.497
0.500
0.501
0.502
0.502
0.492
0.490
0.494
0.505
0.529
0.551
0.570
0.567
0.585
0.593
0.617
0.636
0.662
0.697
0.732
0.752
0.816
0.660
-108.3
-138.5
-152.4
-159.9
-163.8
-167.0
-169.9
-171.7
-173.6
-175.7
178.8
173.6
169.8
165.7
157.8
150.3
142.9
135.5
127.3
117.8
107.3
97.1
36.2
33.2
31.9
30.3
29.5
28.5
27.6
27.0
26.1
25.9
23.5
20.2
18.5
16.2
13.8
11.9
10.4
9.6
6.8
6.2
5.0
3.9
2.8
2.1
0.9
0.3
6.1
4.1
2.3
0.9
-0.8
-1.7
-2.9
-3.9
-5.0
-6.4
-7.6
-8.3
-9.5
-9.0
-9.8
-22.2
-33.6
-45.8
-57.0
-67.8
-76.2
-84.3
-92.8
-99.5
-93.1
84.6
72.3
62.2
52.0
42.0
34.6
24.7
11.0
-1.0
-10.5
-19.8
-28.6
-36.1
-42.9
-52.4
-63.8
-82.8
86.0
74.7
67.5
58.7
51.9
46.1
41.2
-1.8
-2.2
-4.3
-12.7
-10.3 0.31
Typical Noise Parameters at 25°C, VDS = 4.5V, IDS = 280 mA
40.0
30.0
20.0
10.0
0.0
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn
Ga
dB
MSG
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
1.20
1.30
1.61
1.68
2.12
2.77
2.58
2.85
3.35
0.47
0.53
0.61
0.69
0.67
0.71
0.79
0.82
0.73
170.00
2.8
2.6
2.7
4.0
22.8
20.1
17.3
14.4
11.6
9.9
8.8
7.5
5.7
-177.00
-166.34
-155.85
-146.98
-134.35
-125.22
-115.35
-105.76
MAG
8.4
S
21
19.0
26.7
47.2
65.2
-10.0
-20.0
0
5
10
FREQUENCY (GHz)
15
20
Figure 40. MSG/MAG and |S21|2 vs.
Frequency at 4.5V, 280 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
9
ATF-521P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 200 mA
Freq.
GHz
S11
Ang.
S21
Ang.
S12
Mag.
S22
MSG/MAG
dB
Mag.
dB
Mag.
dB
Ang.
Mag. Ang.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.823
0.873
0.879
0.885
0.883
0.897
0.895
0.894
0.900
0.893
0.894
0.889
0.888
0.892
0.884
0.891
0.889
0.902
0.881
0.891
0.876
0.885
0.885
0.893
0.889
0.894
0.840
0.719
0.794
-89.9
-128.7
-145.5
-155.1
-161.1
-165.9
-169.5
-171.9
-174.7
-176.6
175.3
168.5
162.6
157.0
146.5
137.0
127.9
119.6
105.6
96.0
34.4
30.5
27.6
25.2
23.6
22.1
20.8
19.6
18.7
17.8
14.3
12.0
10.2
8.6
6.0
4.0
2.3
0.9
-0.9
-1.7
-2.9
-3.6
-4.8
-6.3
-7.2
-7.8
-8.4
52.21
33.39
23.90
18.25
15.12
12.66
10.95
9.59
8.64
7.78
5.17
4.00
3.22
2.69
2.00
1.59
1.30
1.11
0.90
0.83
0.72
0.66
0.57
0.48
0.44
0.41
0.38
135.6
115.7
106.3
100.5
96.6
92.9
90.5
88.0
86.2
83.7
75.7
67.8
61.3
54.5
40.7
28.3
16.4
4.8
-37.9
-35.6
-34.9
-34.7
-34.4
-34.1
-33.7
-33.6
-33.1
-33.1
-32.1
-30.8
-29.8
-28.6
-26.8
-25.2
-24.0
-22.8
-21.3
-20.2
-19.3
-18.5
-18.0
-17.7
-17.2
-16.9
-16.2
-15.4
-16.7
0.013
0.017
0.018
0.018
0.019
0.020
0.021
0.021
0.022
0.022
0.025
0.029
0.032
0.037
0.046
0.055
0.063
0.072
0.086
0.098
0.108
0.119
0.126
0.131
0.138
0.143
0.154
0.171
0.147
46.2
32.0
27.0
25.8
24.8
24.2
24.2
25.3
26.2
27.6
32.6
33.6
35.2
35.6
34.4
30.5
26.4
21.0
13.3
5.6
0.388
0.478
0.507
0.518
0.519
0.525
0.526
0.528
0.528
0.529
0.527
0.516
0.514
0.517
0.526
0.548
0.568
0.584
0.580
0.594
0.600
0.622
0.641
0.663
0.698
0.732
0.750
0.815
0.655
-113.0
-143.2
-156.0
-163.1
-166.7
-169.6
-172.2
-174.0
-175.6
-177.7
177.2
172.1
168.1
164.0
156.0
148.3
141.0
133.5
124.9
115.8
105.3
95.0
36.0
32.9
31.2
30.1
29.0
28.0
27.2
26.6
25.9
25.5
23.2
21.4
18.4
16.7
13.5
11.9
10.1
9.4
6.7
6.4
4.6
4.2
3.0
2.1
1.2
1.0
-8.8
-20.1
-32.1
-43.7
-54.1
-66.2
-74.0
-80.6
-83.4
-90.1
-102.3
83.9
73.1
60.9
53.0
42.2
34.3
25.0
9.1
-3.2
-12.1
-21.6
-29.9
-36.7
-44.1
-54.3
-64.8
-84.1
84.1
73.1
65.7
57.4
51.0
44.5
40.4
-0.8
-3.2
-5.9
-10.0 0.32
-12.2 0.25
-8.1
Typical Noise Parameters, VDS = 4.5V, IDS = 200 mA
40.0
30.0
20.0
10.0
0.0
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn
Ga
dB
MSG
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.60
0.72
0.96
1.11
1.44
1.75
1.99
2.12
2.36
0.30
0.35
0.47
0.57
0.62
0.69
0.74
0.80
0.69
130.00
150.00
-175.47
-162.03
-150.00
-136.20
-127.35
-116.83
-108.38
2.8
2.6
1.9
2.1
20.2
18.4
16.5
13.8
11.2
9.8
8.7
7.5
5.7
MAG
4.5
S
21
10.0
17.0
28.5
35.6
-10.0
-20.0
0
5
10
FREQUENCY (GHz)
15
20
Figure 41. MSG/MAG and |S21|2 vs.
Frequency at 4.5V, 200 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
10
ATF-521P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 120 mA
Freq.
GHz
S11
Ang.
S21
Ang.
S12
Mag.
S22
MSG/MAG
dB
Mag.
dB
Mag.
dB
Ang.
Mag. Ang.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.913
0.900
0.896
0.893
0.882
0.895
0.893
0.895
0.897
0.895
0.893
0.889
0.882
0.888
0.883
0.885
0.892
0.894
0.880
0.876
0.879
0.889
0.881
0.893
0.891
0.888
0.845
0.828
0.827
-84.6
-125.0
-142.0
-152.3
-158.4
-164.2
-167.8
-170.8
-173.0
-175.5
176.0
169.2
163.6
157.9
146.8
137.7
128.0
120.4
105.7
96.5
34.2
30.3
27.4
25.1
23.4
21.8
20.6
19.5
18.5
17.6
14.1
11.8
10.0
8.4
5.9
3.8
2.1
0.6
-1.0
-1.9
-3.0
-3.8
-5.2
-6.3
-7.2
-8.3
-9.1
51.26
32.80
23.39
17.89
14.75
12.36
10.71
9.39
8.44
7.59
5.07
3.89
3.15
2.62
1.97
1.55
1.28
1.08
0.89
0.81
0.71
0.65
0.55
0.48
0.44
0.39
0.35
135.4
115.4
106.1
100.3
96.3
92.9
90.5
88.0
86.1
83.6
75.3
67.8
61.2
54.6
40.7
28.2
16.7
5.1
-36.4
-33.9
-33.4
-32.9
-32.6
-32.7
-32.4
-32.3
-32.2
-31.8
-31.1
-30.0
-29.0
-28.2
-26.5
-25.2
-24.0
-22.8
-21.2
-20.1
-19.3
-18.6
-18.1
-17.7
-17.3
-16.8
-16.1
-15.6
-16.6
0.015
0.020
0.021
0.023
0.023
0.023
0.024
0.024
0.025
0.026
0.028
0.032
0.036
0.039
0.047
0.055
0.063
0.072
0.087
0.099
0.108
0.118
0.125
0.130
0.136
0.144
0.157
0.167
0.147
49.0
31.2
25.3
23.5
22.5
20.6
20.4
21.1
22.1
23.0
25.5
27.9
30.2
30.2
29.7
26.3
21.9
18.2
10.6
3.2
0.423
0.499
0.522
0.530
0.531
0.537
0.537
0.539
0.539
0.540
0.538
0.528
0.526
0.528
0.536
0.556
0.576
0.591
0.585
0.602
0.605
0.624
0.642
0.664
0.697
0.732
0.751
0.821
0.654
-106.6
-139.4
-153.4
-161.1
-165.0
-168.4
-171.2
-173.1
-174.8
-176.9
177.4
172.2
168.1
163.9
155.7
148.1
140.5
133.1
124.3
114.9
104.5
94.2
35.3
32.1
30.5
28.9
28.1
27.3
26.5
25.9
25.3
24.7
22.6
20.8
19.4
16.9
13.6
11.6
10.2
8.9
6.6
5.7
4.7
4.3
2.7
2.2
1.2
0.4
-8.7
-20.8
-32.7
-44.3
-56.0
-66.6
-72.6
-79.2
-89.6
-95.9
-92.5
84.4
72.8
62.4
54.0
42.1
34.1
25.3
13.2
-5.2
-13.5
-23.1
-31.4
-38.4
-45.9
-55.0
-64.2
-86.1
83.4
72.4
65.1
56.7
50.4
44.0
39.9
-1.5
-3.9
-4.3
-11.2 0.28
-11.0 0.28
-10.2
Typical Noise Parameters, VDS = 4.5V, IDS = 120 mA
40.0
30.0
20.0
10.0
0.0
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn
Ga
dB
MSG
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.60
0.72
0.81
0.92
1.24
1.50
1.60
1.88
2.02
0.19
0.30
0.44
0.56
0.59
0.70
0.75
0.81
0.68
162.00
164.00
176.97
-164.98
-155.51
-136.55
-128.59
-117.31
-109.54
3.0
2.6
2.0
2.0
20.0
18.3
15.9
13.6
11.1
9.7
8.7
7.6
5.6
MAG
3.4
S
21
11.1
16.0
24.0
28.8
-10.0
-20.0
0
5
10
FREQUENCY (GHz)
15
20
Figure 42. MSG/MAG and |S21|2 vs.
Frequency at 4.5V, 120 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
11
ATF-521P8 Typical Scattering Parameters, VDS = 4V, IDS = 200 mA
Freq.
GHz
S11
Ang.
S21
Ang.
S12
Mag.
S22
MSG/MAG
dB
Mag.
dB
Mag.
dB
Ang.
Mag. Ang.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.843
0.879
0.888
0.892
0.886
0.896
0.897
0.898
0.896
0.896
0.898
0.887
0.893
0.886
0.887
0.894
0.898
0.896
0.879
0.888
0.872
0.880
0.875
0.908
0.898
0.888
0.815
0.725
0.792
-90.5
-129.3
-146.1
-155.6
-161.5
-165.7
-169.5
-172.2
-174.9
-176.7
175.2
168.0
162.8
156.9
146.6
136.8
127.4
119.7
105.4
95.0
34.3
30.3
27.4
25.1
23.4
21.8
20.6
19.5
18.6
17.6
14.1
11.8
10.0
8.4
51.89
32.88
23.48
17.91
14.80
12.37
10.74
9.39
8.47
7.61
5.06
3.91
3.15
2.63
1.97
1.57
1.28
1.09
0.90
0.82
0.72
0.65
0.58
0.49
0.44
0.39
0.36
0.32
134.8
115.0
105.8
100.1
96.3
92.7
90.5
88.1
85.9
84.0
75.7
68.1
61.7
55.1
41.5
29.4
17.7
6.3
-37.7
-35.4
-35.1
-34.4
-34.2
-34.2
-33.6
-33.5
-33.3
-32.9
-32.1
-30.7
-29.5
-28.4
-26.7
-25.1
-23.9
-22.6
-21.1
-20.1
-19.2
-18.6
-18.0
-17.7
-17.2
-16.8
-16.2
-15.5
-16.6
0.013
0.017
0.018
0.019
0.020
0.020
0.021
0.021
0.022
0.023
0.025
0.029
0.034
0.038
0.046
0.056
0.064
0.074
0.088
0.099
0.110
0.118
0.126
0.130
0.138
0.144
0.156
0.167
0.147
46.5
32.1
26.0
25.1
24.6
24.1
24.7
24.4
26.5
26.3
29.9
35.2
35.8
35.8
33.2
29.6
25.5
20.4
12.4
4.7
0.408
0.507
0.539
0.549
0.551
0.556
0.557
0.559
0.559
0.560
0.558
0.547
0.545
0.547
0.554
0.572
0.590
0.603
0.594
0.609
0.610
0.629
0.647
0.666
0.699
0.734
0.750
0.809
0.652
-118.1
-146.1
-158.3
-164.8
-168.2
-170.9
-173.5
-175.2
-176.9
-178.7
176.0
170.9
166.9
162.6
154.3
146.6
139.0
131.6
122.7
113.2
102.9
92.6
36.0
32.9
31.2
29.7
28.7
27.9
27.1
26.5
25.9
25.2
23.1
21.3
18.9
16.3
13.6
11.9
10.3
8.9
6.6
6.1
4.4
3.8
2.8
2.6
1.5
0.5
5.9
3.9
2.1
0.7
-0.9
-1.7
-2.9
-3.8
-4.8
-6.2
-7.1
-8.2
-8.9
-9.9
-7.1
-19.3
-30.9
-42.8
-53.3
-63.4
-73.5
-80.2
-85.3
-90.9
-95.1
84.1
72.4
60.4
52.4
41.3
34.1
24.1
11.3
-4.3
-12.9
-22.8
-31.4
-38.0
-45.6
-54.7
-66.0
-84.8
81.9
71.0
64.0
55.9
49.3
43.5
39.7
-1.7
-3.1
-4.2
-9.8
-10.2 0.31
Typical Noise Parameters, VDS = 4V, IDS = 200 mA
40.0
30.0
20.0
10.0
0.0
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn
Ga
dB
MSG
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.67
0.74
0.96
1.24
1.44
1.62
1.83
1.99
2.21
0.21
0.30
0.46
0.57
0.62
0.69
0.74
0.82
0.71
155.00
164.00
-176.61
-162.19
-152.18
-135.43
-127.94
-117.20
-108.96
2.8
2.6
2.1
2.8
20.1
18.4
16.4
13.9
11.4
10.0
8.7
MAG
4.5
S
21
10.0
17.0
27.7
35.3
-10.0
-20.0
7.7
5.9
0
5
10
FREQUENCY (GHz)
15
20
Figure 43. MSG/MAG and |S21|2 vs.
Frequency at 4V, 200 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
12
ATF-521P8 Typical Scattering Parameters, VDS = 3V, IDS = 200 mA
Freq.
GHz
S11
Ang.
S21
Ang.
S12
Mag.
S22
MSG/MAG
dB
Mag.
dB
Mag.
dB
Ang.
Mag. Ang.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.867
0.894
0.899
0.896
0.892
0.910
0.906
0.902
0.907
0.902
0.900
0.896
0.896
0.887
0.890
0.898
0.896
0.904
0.877
0.883
0.877
0.875
0.863
0.910
0.868
0.863
0.835
0.720
0.780
-94.6
-132.9
-148.2
-157.2
-162.8
-167.4
-170.8
-173.6
-175.2
-177.7
174.2
168.1
162.3
156.7
145.7
136.3
127.4
119.4
104.9
94.8
33.7
29.4
26.5
24.1
22.4
20.8
19.6
18.4
17.5
16.6
13.1
10.8
9.0
48.20
29.66
21.06
16.00
13.20
11.00
9.51
8.35
7.51
6.76
4.50
3.49
2.82
2.35
1.76
1.41
1.16
0.98
0.83
0.76
0.67
0.60
0.54
0.47
0.42
0.39
0.33
0.33
132.4
113.2
104.4
99.1
95.6
92.3
90.2
87.8
86.3
84.2
76.4
69.1
63.0
56.9
43.8
32.1
21.6
10.3
-2.3
-13.0
-26.0
-36.3
-47.4
-57.9
-62.8
-74.7
-78.2
-90.8
-92.8
-36.8
-34.9
-34.1
-34.0
-33.6
-33.2
-33.2
-33.0
-32.9
-32.5
-31.5
-29.9
-29.0
-27.7
-26.1
-24.5
-23.4
-22.1
-20.7
-19.8
-18.9
-18.3
-17.8
-17.6
-17.2
-16.8
-16.3
-15.8
-17.0
0.014
0.018
0.020
0.020
0.021
0.022
0.022
0.022
0.023
0.024
0.027
0.032
0.036
0.041
0.050
0.059
0.068
0.078
0.092
0.102
0.113
0.121
0.128
0.132
0.138
0.144
0.154
0.161
0.142
45.1
28.5
23.2
23.7
24.5
22.9
23.9
24.6
27.0
26.9
32.7
32.9
34.3
35.0
32.2
28.3
23.5
17.7
9.0
0.482
0.601
0.636
0.647
0.650
0.655
0.657
0.658
0.660
0.659
0.656
0.647
0.642
0.643
0.645
0.659
0.671
0.677
0.651
0.661
0.657
0.670
0.680
0.694
0.721
0.748
0.758
0.818
0.655
-132.4
-154.2
-163.8
-169.2
-171.9
-174.4
-176.7
-178.2
-179.5
178.6
173.4
167.9
163.7
159.2
150.4
142.1
134.3
126.6
117.0
107.2
96.8
35.4
32.2
30.2
29.0
28.0
27.0
26.4
25.8
25.1
24.5
22.2
20.4
18.6
15.6
12.9
11.3
9.5
8.5
5.9
5.3
4.0
3.1
1.9
2.3
0.2
7.4
4.9
3.0
1.3
-0.2
-1.6
-2.4
-3.5
-4.4
-5.4
-6.5
-7.5
-8.1
-9.6
-9.5
1.3
-7.3
83.1
71.7
60.6
51.6
40.9
33.4
25.2
11.2
-16.6
-25.1
-33.6
-40.4
-47.6
-56.8
-67.6
-85.1
86.7
76.2
65.9
59.3
51.3
44.9
39.4
37.1
-0.2
-2.1
-2.6
-5.7
-7.7
-11.6 0.26
Typical Noise Parameters, VDS = 3V, IDS = 200 mA
40.0
30.0
20.0
10.0
0.0
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn
Ga
dB
MSG
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.66
0.72
0.87
1.00
1.32
1.49
1.59
1.79
1.96
0.22
0.30
0.42
0.59
0.63
0.72
0.74
0.78
0.70
147.00
160.00
-179.94
-163.63
-153.81
-135.10
-128.97
-117.68
-110.04
2.9
2.6
1.9
1.6
20.0
18.3
16.0
13.7
11.3
9.9
8.5
7.6
5.6
MAG
3.7
S
21
10.0
15.0
25.1
29.2
-10.0
-20.0
0
5
10
FREQUENCY (GHz)
15
20
Figure 44. MSG/MAG and |S21|2 vs.
Frequency at 3V, 200 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
13
The input load pull parameter at
2 GHz is shown in Figure 1 along
with the optimum S11 conjugate
match.
rules but will have different
locations. Also, the location of
these points is largely due to the
manufacturing process and
partly due to IC layout, but in
either case beyond the scope of
this application note.
ATF-521P8
Applications Information
Description
Agilent’s ATF-521P8 is an
enhancement mode PHEMT
designed for high linearity and
medium power applications.
With an OIP3 of 42 dBm and a
1dB compression point of
ΓS
S11
*
26 dBm, ATF-521P8 is well suited
as a base station transmit driver
or a first or second stage LNA in
a receive chain. Whether the
design is for a W-CDMA, CDMA,
or GSM basestation, this device
delivers good linearity in the
form of OIP3 or ACLR, which is
required for standards with high
peak to average ratios.
ΓL
S22*
Figure 1. Input Match for ATF-521P8 at 2 GHz.
Thus, it should be obvious from
the illustration above that if this
device is matched for maximum
return loss i.e. S11*, then OIP3
will be sacrificed. Conversely, if
ATF-521P8 is matched for
maximum linearity, then return
loss will not be greater than
10 dB. For most applications, a
designer requires VSWR greater
Figure 2. Output Match at 2 GHz.
Once a designer has chosen the
proper input and output imped-
ance points, the next step is to
choose the correct topology to
accomplish this match. For
Application Guidelines
The ATF-521P8 device operates
as a normal FET requiring input
and output matching as well as
DC biasing. Unlike a depletion
mode transistor, this enhance-
ment mode device only requires a
single positive power supply,
which means a positive voltage is
placed on the drain and gate in
order for the transistor to turn
on. This application note walks
through the RF and DC design
employed in a single FET ampli-
fier. Included in this description
is an active feedback scheme to
accomplish this DC biasing.
example to perform the above
output impedance transforma-
than 2:1, hence limiting the input tion from 50Ω to the given load
match close to S11*. Normally,
the input return loss of a single
ended amplifier is not critical as
parameter of 0.53∠-176°, two
possible solutions exist. The first
potential match is a high pass
most basestation LNA and driver configuration accomplished by a
amplifiers are in a balanced
configuration with 90° (quadra-
ture) couplers.
shunt inductor and a series
capacitor shown in Figure 3
along with its frequency response
in Figure 4.
Proceeding from the same
premise, the output match of this
device becomes much simpler.
As background information, it is
important to note that OIP3 is
largely dependant on the output
match and that output return
loss is also required to be greater
than 10 dB. So, Figure 2 shows
how both good output return loss
and good linearity could be
RF
in
C1
RF
out
L1
RF Input & Output Matching
In order to achieve maximum
linearity, the appropriate input
(Γs) and output (ΓL) impedances
must be presented to the device.
Correctly matching from these
impedances to 50Ωs will result in
maximum linearity. Although
ATF-521P8 may be used in other
impedance systems, data col-
lected for this data sheet is all
referenced to a 50Ω system.
Figure 3. High Pass Circuit Topology.
Amp
achieved simultaneously with the
same impedance point.
Frequency
Of course, these points are valid
only at 2 GHz, and other frequen-
cies will follow the same design
Figure 4. High Pass Frequency Response.
14
The second solution is a low pass precipitously giving a narrow
A voltage divider network with
configuration with a shunt
capacitor and a series inductor
shown in Figure 5 and 6.
band frequency response, yet still R1 and R2 establishes the typical
wide enough to accommodate a
CDMA or WCDMA transmit band.
For more information on RF
matching techniques refer to
MGA-53543 application note.
gate bias voltage (Vg).
Vg
R1 =
(2)
(3)
p
RF
in
L1
RF
out
Ibb
C1
Passive Bias[1]
(Vdd – Vg) x R1
R2 =
p
Vg
Once the RF matching has been
established, the next step is to
DC bias the device. A passive
biasing example is shown in
Figure 8. In this example the
voltage drop across resistor R3
sets the drain current (Id) and is
calculated by the following
equation:
Figure 5. Low Pass Circuit Topology.
Amp
Often the series resistor, R4, is
added to enhance the low fre-
quency stability. The complete
passive bias example may be
found in reference [1].
Frequency
C4
OUTPUT
C1
L1
INPUT
Q1
Figure 6. Low Pass Frequency Response.
Zo
Zo
V
dd – Vds
C2
C3
L4
C5
R3 =
(1)
The actual values of these
p
Ids + Ibb
components may be calculated by
hand on a Smith Chart or more
accurately done on simulation
software such as ADS. There are
some advantages and disadvan-
tages of choosing a high pass
R4
R3
C6
where,
I
b
Vdd is the power supply voltage;
R5
Vds is the device drain to source
voltage;
R2
R1
Vdd
versus a low pass. For instance, a Ids is the device drain to source
Figure 8. Passive Biasing.
high pass circuit cuts off low
frequency gain, which narrows
the usable bandwidth of the
amplifier, but consequently helps
avoid potential low frequency
instability problems. A low pass
match offers a much broader
frequency response, but it has
two major disadvantages. First it
has the potential for low fre-
quency instability, and second it
creates the need for an extra DC
blocking capacitor on the input
in order to isolate the device gate
from the preceding stages.
current;
Ibb for DC stability is 10X the
typical gate current;
RF
C3
C1
RF
out
in
Zo
Zo
52
L1
C2
Total Response
Output Match
Frequency
Input Match
ATF-521P8
Amp
Amp
Amp
Figure 7 displays the input and
output matching selected for
ATF-521P8. In this example the
input and output match both
essentially function as high pass
filters, but the high frequency
gain of the device rolls off
Amp
+
+
=
Frequency
Frequency
Frequency
Figure 7. Input and Output Match for ATF-521P8 at 2 GHz.
15
Active Bias[2]
To calculate the values of R1, R2,
R3, and R4 the following param-
eters must be know or chosen
first:
and also equal to the reference
current IR.
Due to very high DC power
dissipation and small package
constraints, it is recommended
that ATF-521P8 use active
biasing. The main advantage of
an active biasing scheme is the
ability to hold the drain to source
current constant over a wide
range of temperature variations.
A very inexpensive method of
accomplishing this is to use two
The next three equations are
used to calculate the rest of the
biasing resistors for Figure 9.
Note that the voltage drop across
R1 must be set equal to the
voltage drop across R3, but with
a current of IR.
Ids is the device drain-to-source
current;
IR is the Reference current for
active bias;
Vdd is the power supply voltage
available;
Vds is the device drain-to-source
Vdd – Vds
R1 =
(5)
PNP bipolar transistors arranged voltage;
in a current mirror configuration
p
IR
Vg is the typical gate bias;
as shown in Figure 9. Due to
resistors R1 and R3, this circuit
is not acting as a true current
mirror, but if the voltage drop
across R1 and R3 is kept identi-
cal then it still displays some of
the more useful characteristics of
a current mirror. For example,
transistor Q1 is configured with
its base and collector tied
R2 sets the bias current through
Q1.
Vbe1 is the typical Base-Emitter
turn on voltage for Q1 & Q2;
Vds – Vbe1
Therefore, resistor R3, which sets
the desired device drain current,
is calculated as follows:
R2 =
(6)
p
IR
R4 sets the gate voltage for
ATF-521P8.
Vg
V
dd – Vds
R3 =
(4)
p
R4 =
(7)
Ids + IC2
p
IC2
together. This acts as a simple PN
junction, which helps tempera-
ture compensate the Emitter-
Base junction of Q2.
where,
Thus, by forcing the emitter
voltage (VE) of transistor Q1
equal to Vds, this circuit regulates
the drain current similar to a
current mirror. As long as Q2
operates in the forward active
mode, this holds true. In other
words, the Collector-Base junc-
tion of Q2 must be kept reversed
biased.
IC2 is chosen for stability to be
10 times the typical gate current
R1
VE
R2
R4
Q1
Q2
Vdd
C6
R3
Vg
Vds
C5
C8
C4
C3
R6
R5
L3
L2
C7
C1
RF
in
RF
out
L1
7
2
2PL
ATF-521P8
C2
L4
Figure 9. Active Bias Circuit.
16
PCB Layout
rigidity and consists of FR4 with
dielectric constant of 4.2.
A recommended PCB pad layout
for the Leadless Plastic Chip
Carrier (LPCC) package used by
the ATF-521P8 is shown in
Figure 10. This layout provides
plenty of plated through hole vias
for good thermal and RF ground-
ing. It also provides a good
transition from microstrip to the
device package. For more de-
tailed dimensions refer to
Section 9 of the data sheet.
Pin 8
Drain
Pin 6
Pin 5
Source
Gate
P
High Linearity Tx Driver
Pin 3
The need for higher data rates
and increased voice capacity gave
rise to a new third generation
standard know as Wideband
CDMA or UMTS. This new
standard requires higher perfor-
mance from radio components
such as higher dynamic range
andbetter linearity. For example,
a WCDMA waveform has a very
high peak to average ratio which
forces amplifiers in a transmit
chain to have very good Adjacent
Channel Leakagepower Ratio or
ACLR, or else operate in a
backed off mode. If the amplifier
is not backed off then the wave-
form is compressed and the
signal becomes very nonlinear.
This application example pre-
sents a highly linear transmit
drive for use inthe 2.14GHz
frequency range. Using the RF
matching techniques described
earlier, ATF-521P8 is matched to
the following input and output
impedances:
Source
Bottom View
Figure 11. LPCC Package for ATF-521P8.
This simplifies RF grounding by
reducing the amount of induc-
tance from the source to ground.
It is also recommended to ground
pins 1 and 4 since they are also
connected to the device source.
Pins 3, 5, 6, and 8 are not con-
nected, but may be used to
help dissipate heat from the
package or for better alignment
when soldering the device.
Figure 10. Microstripline Layout.
This three-layer board (Figure
12) contains a 10-mil layer and a
52-mil layer separated by a
ground plane. The first layer is
Getek RG200D material with
dielectric constant of 3.8. The
second layer is for mechanical
RF Grounding
Unlike SOT packages, ATF-521P8
is housed in a leadless package
with the die mounted directly to
the lead frame or the belly of the
package shown in Figure 11.
Input
Match
Output
Match
2PL
50 Ohm
50 Ohm
C5
S11* = 0.89∠ -169
Γ
= 0.53∠ -176
L
R1
R3
R2
R4
Figure 13. ATF-521P8 Matching.
C6
C7
C4
C3
J2
J1
C1
C8
L1
0
short
Figure 12. ATF-521P8 demoboard.
17
20
15
10
5
As described previously the input
impedance must be matched to
S11* in order to guarantee return
loss greater than 10 dB. A high
pass network is chosen for this
match. The output is matched to
ΓL with another high pass
network. The next step is to
choose the proper DC biasing
conditions. From the data sheet,
ATF-521P8 produces good
linearity at a drain current of
200mA and a drain to source
voltage of 4.5V. Thus to construct
the active bias circuit described,
the following parameters are
given:
Resistor
Calculated
Actual
Gain
R1
R2
R3
R4
50Ω
49.9Ω
383Ω
2.37Ω
61.9Ω
385Ω
2.38Ω
62Ω
Table 1. Resistors for Active Bias.
NF
The entire circuit schematic for a
2.14 GHz Tx driver amplifier is
shown below in Figure 14.
0
1.6
1.8
2.0
2.2
2.4
2.6
FREQUENCY (GHz)
Capacitors C4, C5, and C6 are
added as a low frequency bypass.
These terminate second order
harmonics and help improve
linearity. Resistors R5 and
R6 also help terminate low
frequencies, and can prevent
resonant frequencies between
the two bypass capacitors.
Figure 15. Gain and Noise Figure vs. Frequency.
Input and output return loss are
both greater that 10 dB. Although
somewhat narrowband, the
response is adequate in the
frequency range of 2110 MHz to
2170 MHz for the WCDMA
downlink. If wider band response
is need, using a balanced configu-
ration improves return loss and
doubles OIP3.
Ids = 200 mA
IR = 10 mA
Vdd = 5V
Vds = 4.5V
Vg = 0.62V
Vbe1 = 0.65V
Performance of ATF-521P8 at
2140 MHz
ATF-521P8 delivers excellent
performance in the WCDMA
frequency band. With a drain-to-
source voltage of 4.5V and a
drain current of 200 mA, this
device has 16.5 dB of gain and
1.55 dB of noise figure as show in
Figure 15.
Using equations 4, 5, 6, and 7, the
biasing resistor values are
calculated in column 2 of table 1,
and the actual values used are
listed in column 3.
0
S11
-5
-10
S22
I
R
R1=49.9Ω
R2=383Ω
-15
1.6
Q1
Q2
1.8
2.0
2.2
2.4
2.6
+
V
be1
+5V
FREQUENCY (GHz)
C5=1µF
Figure 16. Input and Output Return Loss vs.
Frequency.
V
g
V
ds
R3=2.37Ω
C6=.1µF
R4=61.9Ω
IC2
C4=1µF
Perhaps the most critical system
levelspecification for the
ATF-521P8 lies in its distortion-
less output power. Typically,
amplifiers arecharacterized for
linearity by measuring OIP3. This
is a two-tone harmonic measure-
ment using CW signals. But
because WCDMA is a modulated
waveform spread across
3.84 MHz, it is difficult to corre-
lated good OIP3 to good ACLR.
Thus, both are measured and
presented to avoid ambiguity.
R6=1.2Ω
R5=10Ω
C7=150pF
C3=4.7pF
L3=39nH
C8=1.5pF
L2=12nH
L1=1.0nH
C1=1.2pF
RF
RF
out
in
7
2
2PL
ATF-521P8
C2=1.5nH
L4=3.9nH
Figure 14. 2140 MHz Schematic.
18
45
40
35
30
25
Using the 3GPP standards
From Figure 19, a very useful
equation is derived to calculate
the temperature of the channel
for a given ambient temperature.
These calculations are all incor-
porated into Agilent Technolo-
gies AppCAD.
document Release 1999 version
2002-6, the following channel
configuration was used to test
ACLR. This table contains the
power levels of the main chan-
nels used for Test Model 1. Note
that the DPCH can be made up of
16, 32, or 64 separate channels
each at different power levels
and timing offsets. For a listing
of power levels, channelization
codes and timing offset see the
entire 3GPP TS 25.141 V3.10.0
(2002-06) standards document
at: http://www.3gpp.org/specs/
specs.htm
Tch
(channel)
θch-b
Tb (board
or belly
2060 2080 2100 2120
2200
2140 2160 2180
FREQUENCY (MHz)
of the part)
θb-s
Figure 17. OIP3 vs. Frequency in WCDMA Band
(Pout = 12 dBm).
Ts (sink)
θs-a
-30
-35
-40
-45
-50
-55
-60
-65
Ta (ambient)
Figure 19. Equivalent Circuit for Thermal
Resistance.
3GPP TS 25.141 V3.10.0 (2002-06)
Type
Pwr (dB)
P-CCPCH+SCH
Primary CPICH
PICH
-10
-10
-18
-18
Hence very similar to Ohms Law,
the temperature of the channel is
calculated with equation 8 below.
TCH = Pdiss (θch–b + θb–s +θs–a
)
S-CCPCH containing PCH
(SF=256)
+ Tamb
(8)
-3
2
7
12
17
22
Pout (dBm)
DPCH-64ch
(SF=128)
-1.1
If no heat sink is used or heat
Figure 18. ACLR vs. Pout at 5 MHz Offset.
sinking is incorporated into the
PCB board then equation 8 may
be reduced to:
Table 3. ACLR Channel Power Configuration.
C1=1.2 pF
C2,C8=1.5 pF
C3=4.7 pF
C4,C6=.1 µF
C5=1 µF
Phycomp 0402CG129C9B200
Phycomp 0402CG159C9B200
Phycomp 0402CG479C9B200
Phycomp 06032F104M8B200
AVX 0805ZC105KATZA
Phycomp 0402CG151J9B200
TOKO LL1005-FH1n0S
TOKO LL1005-FS12N
TOKO LL1005-FS39
Thermal Design
TCH =Pdiss (θch–b +θb–a)+Tamb (9)
When working with medium to
high power FET devices, thermal
dissipation should be a large part
of the design. This is done to
ensure that for a given ambient
temperature the transistor’s
channel does not exceed the
maximum rating, TCH, on the
data sheet. For example,
ATF-521P8 has a maximum
channel temperature of 150°C
and a channel to board thermal
resistance of 45°C/W, thus the
entire thermal design hinges
from these key data points. The
question that must be answered
is whether this device can
where,
θ
b–a is the board to ambient
thermal resistance;
ch–b is the channel to board
C7=150 pF
L1=1.0 nH
L2=12 nH
L3=39 nH
L4=3.9 nH
R1=49.9Ω
R2=383Ω
R3=2.37Ω
R4=61.9Ω
R5=10Ω
θ
thermal resistance.
The board to ambient thermal
resistance thus becomes very
important for this is the
designer’s major source of heat
control. To demonstrate the
influence of θb-a, thermal resis-
tance is measured for two very
different scenarios using the
ATF-521P8 demoboard. The first
case is done with just the
TOKO LL1005-FH3N9S
RohmRK73H1J49R9F
Rohm RK73H1J3830F
Rohm RK73H1J2R37F
Rohm RK73H1J61R9F
Rohm RK73H1J10R0F
Rohm RK73H1J1R21F
Philips BCV62C
operate in a typical environment
with ambient temperature
fluctuations from -25°C to 85°C.
R6=1.2Ω
Q1, Q2
demoboard by itself. The second
case is the ATF demoboard
J1, J2
142-0701-851
Table 2. 2140 MHz Bill of Material.
19
mounted on a chassis or metal
casing, and the results are given
below:
lower the temperature below
150°C. This can be better under-
stood with Figure 20 below. Note
power is derated at 13 mW/°C
for the board with no heat sink
and no derating is required for
the chassis mounted board until
an ambient temperature of
100°C.
Summary
A high linearity Tx driver
amplifierfor WCDMA has been
presented and designed using
Agilent’s ATF-521P8. This
includes RF, DC and good ther-
mal dissipation practices for
reliable lifetime operation. A
summary of the typical perfor-
mance for ATF-521P8 demoboard
at 2140 MHz is as follows:
ATF Demoboard
θb-a
PCB 1/8" Chassis
PCB no HeatSink
10.4°C/W
32.9°C/W
Table 4. Thermal resistance measurements.
Pdiss
(W)
Therefore calculating the tem-
perature of the channel for these
two scenarios gives a good
indication of what type of heat
sinking is needed.
Mounted on Chassis
(18 mW/°C)
0.9W
Demo Board Results at 2140 MHz
No Heatsink
(13 mW/°C)
Gain
OIP3
ACLR
P1dB
NF
16.5 dB
41.2 dBm
-58 dBc
24.8 dBm
1.55 dB
0
81 100
150
Tamb (°C)
Case 1: Chassis Mounted @ 85°C
Tch = P x (θch-b +θb-a) + Ta
=.9W x (45+10.4)°C/W +85°C
Tch = 135°C
Figure 20. Derating for ATF- 521P8.
Thus, for reliable operation of
ATF-521P8 and extended MTBF,
it is recommended to use some
form of thermal heatsinking. This
may include any or all of the
following suggestions:
References
Case 2: No Heatsink @ 85°C
Tch = P x (θch-b +θb-a) + Ta
=.9W x (45+32.9)°C/W + 85°C
Tch = 155°C
[1] Ward, A. (2001) Agilent
ATF-54143 Low Noise Enhance-
ment Mode Pseudomorphic
HEMT in a Surface Mount
Plastic Package, 2001 [Internet],
Available from:
• Maximize vias underneath and
around package;
• Maximize exposed surface
In other words, if the board is
mounted to a chassis, the chan-
nel temperature is guaranteed to
be 135°C safely below the 150°C
maximum. But on the other
hand, if no heat sinking is used
and the θb-a is above 27°C/W
(32.9°C/W in this case), then the
power must be derated enough to
<http://www.agilent.com/view/rf>
[Accessed 22 August, 2002].
metal;
• Use 1 oz or greater copper clad;
• Minimize board thickness;
• Metal heat sinks or extrusions;
• Fans or forced air;
[2] Biasing Circuits and
Considerations for GaAs
MESFET Power Amplifiers, 2001
[Internet], Available from:
<http://www.rf-solutions.com/
pdf/AN-0002_ajp.pdf> [Accessed
22 August, 2002]
• Mount PCB to Chassis.
20
Device Models
Refer to Agilent’s Web Site
www.agilent.com/view/rf
Ordering Information
Part Number
No. of Devices
Container
ATF-521P8-TR1
ATF-521P8-TR2
ATF-521P8-BLK
3000
10000
100
7” Reel
13”Reel
antistatic bag
2x 2 LPCC (JEDEC DFP-N) Package Dimensions
D1
D
pin1
P
pin1
8
7
1
2
E
e
E1
2PX
6
5
R
3
4
b
L
Top View
Bottom View
A1
A
A
A2
End View
End View
DIMENSIONS
SYMBOL
MIN.
0.70
0
NOM.
0.75
MAX.
0.80
A
A1
A2
b
0.02
0.05
0.203 REF
0.25
0.225
1.9
0.275
2.1
D
2.0
D1
E
0.65
1.9
0.80
0.95
2.1
2.0
E1
e
1.45
1.6
1.75
0.50 BSC
DIMENSIONS ARE IN MILLIMETERS
21
PCB Land Pattern and Stencil Design
2.72 (107.09)
0.63 (24.80)
0.22 (8.86)
0.32 (12.79)
2.80 (110.24)
0.70 (27.56)
0.25 (9.84)
0.25 (9.84)
PIN 1
PIN 1
0.50 (19.68)
0.50 (19.68)
φ0.20 (7.87)
1.54 (60.61)
1.60 (62.99)
0.28 (10.83)
+
Solder
mask
0.25 (9.74)
0.63 (24.80)
0.60 (23.62)
RF
transmission
line
0.72 (28.35)
0.80 (31.50)
0.15 (5.91)
0.55 (21.65)
Stencil Layout (top view)
PCB Land Pattern (top view)
Device Orientation
4 mm
REEL
8 mm
2PX
2PX
2PX
2PX
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
22
Tape Dimensions
P0
P2
P
D
E
F
W
+
+
D1
Tt
t1
K0
10° Max
10° Max
A0
B0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (inches)
CAVITY
LENGTH
WIDTH
A
0
2.30 0.05
2.30 0.05
1.00 0.05
4.00 0.10
1.00 + 0.25
0.091 0.004
0.091 0.004
0.039 0.002
0.157 0.004
0.039 + 0.002
B
0
DEPTH
K
0
P
PITCH
BOTTOM HOLE DIAMETER
D
1
PERFORATION
CARRIER TAPE
DIAMETER
PITCH
D
1.50 0.10
4.00 0.10
1.75 0.10
0.060 0.004
0.157 0.004
0.069 0.004
P
0
POSITION
E
WIDTH
W
8.00 + 0.30
8.00 – 0.10
0.254 0.02
0.315 0.012
0.315 0.004
0.010 0.0008
THICKNESS
t
1
COVER TAPE
DISTANCE
WIDTH
C
5.4 0.10
0.205 0.004
TAPE THICKNESS
T
t
0.062 0.001
0.0025 0.0004
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
2.00 0.05
0.138 0.002
0.079 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
23
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788 6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6271 2451
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0120-61-1280(Domestic Only)
Korea: (+65) 6271 2194
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Taiwan: (+65) 6271 2654
Data subject to change.
Copyright © 2003 Agilent Technologies, Inc.
Obsoletes 5988-8403
July 29, 2003
5988-9974EN
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