ATF-36077-STRG [AGILENT]
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4;
| 型号： | ATF-36077-STRG |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 |
| 文件： | 总4页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2–18 GHz Ultra Low Noise
Pseudomorphic HEMT
Technical Data
ATF-36077
77 Package
Features
• PHEMT Technology
Description
Hewlett-Packard’sATF-36077is
an ultra-low-noise Pseudomorphic
High Electron Mobility Transistor
(PHEMT), packaged in a low
parasitic, surface-mountable
ceramic package. Properly
matched, this transistor will
provide typical 12 GHz noise
figures of 0.5 dB, or typical 4 GHz
noise figures of 0.3 dB. Addition-
ally, the ATF-36077 has very low
noise resistance, reducing the
sensitivity of noise performance
to variations in input impedance
match, making the design of
broadband low noise amplifiers
much easier. The premium
• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Parasitic Ceramic
Microstrip Package
• Tape-and-Reel Packing
Option Available
Pin Configuration
4
SOURCE
Applications
• 12 GHz DBS LNB (Low Noise
Block)
• 4 GHz TVRO LNB (Low Noise
Block)
• Ultra-Sensitive Low Noise
Amplifiers
1
3
DRAIN
GATE
sensitivity of the ATF-36077
makes this device the ideal choice
for use in the first stage of
2
SOURCE
extremely low noise cascades.
The repeatable performance and
consistency make it appropriate
for use in Ku-band Direct Broad-
cast Satellite (DBS) Television
systems, C-band Television
Receive Only (TVRO) LNAs, or
other low noise amplifiers
operatinginthe2-18 GHz
25
Note: 1. See Noise Parameter Table.
20
Ga
15
10
1.2
0.8
0.4
0
NF[1]
frequency range.
This GaAs PHEMT device has a
nominal 0.2 micron gate length
with a total gate periphery (width)
of 200 microns. Proven gold based
metalization systems and nitride
passivation assure rugged, reliable
devices.
4
0
8
12
16
20
FREQUENCY (GHz)
Figure 1. ATF-36077 Optimum Noise
Figure and Associated Gain vs.
Frequency for VDS = 1.5 V, ID = 10 mA.
5965-8726E
5-75
ATF-36077 Absolute Maximum Ratings
Absolute
Thermal Resistance[2,3]
:
Symbol
VDS
Parameter
Drain – Source Voltage
Gate – Source Voltage
Gate-Drain Voltage
Units
Maximum[1]
θch-c =60°C/W
V
V
V
+3
-3
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
VGS
VGD
-3.5
2. Measured at Pdiss = 15 mW and
Tch = 100°C.
3. Derate at 16.7 mW/°C for TC > 139°C.
ID
PT
Drain Current
Total Power Dissipation[3]
mA
mW
dBm
°C
Idss
180
Pin max
Tch
RF Input Power
+10
Channel Temperature
Storage Temperature
150
TSTG
°C
-65to150
ATF-36077 Electrical Specifications,
TC = 25°C, ZO = 50Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol
NF
Parameters and Test Conditions
NoiseFigure[1]
Gain at NF[1]
Units
dB
Min.
Typ.
0.5
Max.
f=12.0GHz
f=12.0GHz
0.6
GA
dB
11.0
50
12.0
55
gm
Transconductance
Saturated Drain Current
Pinch-off Voltage
VDS =1.5V,VGS =0V
VDS =1.5V,VGS =0V
VDS =1.5V,IDS =10%ofIdss
mS
mA
V
Idss
15
25
45
V
p10%
-1.0
-0.35
-0.15
Note:
1. Measured in a fixed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°.
ATF-36077 Characterization Information,
TC = 25°C, ZO = 50Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions
Noise Figure (Tuned Circuit)
Units
Typ.
0.3[2]
0.5
NF
f=4GHz
f=12GHz
dB
dB
GA
Gain at Noise Figure (Tuned Circuit)
f=4GHz
f=12GHz
dB
dB
17
12
S12off
P1dB
Reverse Isolation
f=12GHz,VDS =1.5V,VGS =-2V
dB
14
Output Power at 1 dB Gain Compression
f=4GHz
f=12GHz
dBm
dBm
5
5
VGS 10 mA
Gate to Source Voltage for IDS = 10 mA
VDS =1.5V
V
-0.2
Note:
2. See noise parameter table.
5-76
ATF-36077 Typical Scattering Parameters,
CommonSource, ZO =50Ω, VDS =1.5V, ID =10mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.99
0.97
0.94
0.90
0.86
0.82
0.78
0.75
0.72
0.69
0.66
0.63
0.61
0.60
0.58
0.57
0.56
0.57
-17
-33
-49
-65
-79
14.00
13.81
13.53
13.17
12.78
12.39
12.00
11.64
11.32
11.04
10.81
10.63
10.50
10.41
10.36
10.34
10.34
10.35
5.010
4.904
4.745
4.556
4.357
4.162
3.981
3.820
3.682
3.566
3.473
3.401
3.349
3.315
3.296
3.289
3.289
3.291
163
147
132
116
102
88
75
62
49
37
25
13
1
-12
-24
-37
-50
-64
-36.08
-30.33
-27.25
-25.32
-24.04
-23.17
-22.58
-22.17
-21.90
-21.71
-21.57
-21.44
-21.32
-21.19
-21.04
-20.87
-20.69
-20.53
0.016
0.030
0.043
0.054
0.063
0.069
0.074
0.078
0.080
0.082
0.083
0.085
0.086
0.087
0.089
0.091
0.092
0.094
78
66
54
43
33
24
16
8
0.60
0.59
0.57
0.55
0.53
0.50
0.48
0.46
0.44
0.42
0.40
0.38
0.37
0.35
0.33
0.31
0.29
0.26
-14
-28
-41
-54
-66
-78
-89
-99
-109
-119
-129
-139
-149
-160
-171
177
164
148
-93
-107
-120
-133
-146
-159
-172
175
161
147
131
114
97
1
-6
-13
-19
-25
-32
-39
-47
-55
-65
ATF-36077 Typical “Off” Scattering Parameters,
CommonSource, ZO =50Ω, VDS =1.5V, ID =0mA, VGS =-2V
Freq.
GHz
S11
S21
Mag.
S21
Mag.
S22
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
11.0
12.0
13.0
0.96
0.95
0.94
-139
-152
-166
-14.2
-14.0
-13.8
0.19
0.20
0.20
-43
-56
-69
-14.2
-14.0
-13.8
0.19
0.20
0.20
-43
-56
-68
0.97
0.97
0.96
-125
-137
-149
5-77
ATF-36077 Typical Noise Parameters,
CommonSource, ZO =50Ω, VDS =1.5V, ID =10mA
25
20
15
10
5
[1]
Freq.
GHz
Fmin
dB
Γopt
Rn/Zo
-
Mag.
0.95
0.90
0.81
0.73
0.66
0.60
0.54
0.48
0.43
0.39
Ang.
12
1
2
0.30
0.30
0.30
0.30
0.37
0.44
0.50
0.56
0.61
0.65
0.40
0.20
0.17
0.13
0.09
0.05
0.03
0.02
0.05
0.09
MSG MAG
25
S21
4
51
6
76
8
102
129
156
-174
-139
-100
10
12
14
16
18
0
0
4
8
12
16
20
FREQUENCY (GHz)
Figure 2. Maximum Available Gain,
Maximum Stable Gain and Insertion
Power Gain vs. Frequency. VDS = 1.5 V,
ID = 10 mA.
Note:
1. The Fmin values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses
that will be encountered when matching to the optimum reflection coefficient (Γopt) at
these frequencies. The theoretical Fmin values for these frequencies are: 0.10 dB at
2 GHz, 0.20 dB at 4 GHz, and 0.29 dB at 6 GHz. Noise parameters are derived from
associated s parameters, packaged device measurements at 12 GHz, and die level
measurements from 6 to 18 GHz.
77 Package Dimensions
Part Number Ordering Information
Part Number
ATF-36077-TRl[2]
ATF-36077-STR
No. of Devices
Container
7" Reel
strip
1.02
(0.040)
1000
10
SOURCE
4
.51
(0.020)
Note:
1
3
2. For more information, see “Tape and Reel Packaging for Semiconductor Devices,” in
“Communications Components” Designer‘s Catalog.
GATE
DRAIN
SOURCE
2
1.78
(0.070)
1.75
(0.069)
1.22
(0.048)
5.28
(0.208)
.53
(0.021)
.10
(0.004)
TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES).
5-78
相关型号：
ATF-36077-TR1G
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4
AGILENT
ATF-36077-TRI
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4
AGILENT
ATF-36077-TRIG
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4
AGILENT
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