ATF-36077-TR1 [AVAGO]
2â18 GHz Ultra Low Noise Pseudomorphic HEMT; 2A ???? 18 GHz的超低噪声赝HEMT
| 型号： | ATF-36077-TR1 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | 2â18 GHz Ultra Low Noise Pseudomorphic HEMT |
| 文件： | 总4页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ATF-36077
2–18 GHz Ultra Low Noise Pseudomorphic HEMT
Data Sheet
Description
Features
• PHEMT Technology
• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Parasitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available
AvagoTechnologies'ATF-36077isanultra-low-noisePseudo-
morphic High Electron Mobility Transistor (PHEMT), pack-
agedinalowparasitic,surface-mountableceramicpackage.
Properly matched, this transistor will provide typical 12
GHz noise figures of 0.5 dB, or typical 4 GHz noise figures
of 0.3 dB. Additionally, the ATF-36077 has very low noise
resistance, reducingthesensitivityofnoiseperformanceto
variations in input impedance match, making the design of
broadband low noise amplifiers much easier.The premium
sensitivity of the ATF-36077 makes this device the ideal
choice for use in the first stage of extremely low noise
cascades. The repeatable performance and consistency Applications
make it appropriate for use in Ku-band Direct Broad-cast
Satellite(DBS)Televisionsystems,C-bandTelevisionReceive
Only (TVRO) LNAs, or other low noise amplifiers operating
in the 2-18 GHz frequency range.
• 12 GHz DBS LNB (Low Noise Block)
• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Amplifiers
25
20
15
10
77 Package
Ga
1.2
0.8
NF[1]
0.4
0
4
0
8
12
16
20
Pin Configuration
FREQUENCY (GHz)
4
SOURCE
Figure 1. ATF-36077 Optimum Noise Figure and Associated
Gain vs. Frequency for VDS = 1.5 V, ID = 10 mA.
1
3
This GaAs PHEMT device has a nominal 0.2 micron gate
length with a total gate periphery (width) of 200 microns.
Proven gold based metalization systems and nitride pas-
sivation assure rugged, reliable devices.
GATE
DRAIN
2
SOURCE
Note: 1. See Noise Parameter Table.
ATF-36077 Absolute Maximum Ratings
Thermal Resistance[2,3]: θch-c = 60°C/W
Absolute
Symbol
VDS
Parameter
Units
Maximum[1]
Drain – Source Voltage
Gate – Source Voltage
V
V
+3
-3
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Measured at Pdiss = 15 mW and Tch =100°C.
3. Derate at 16.7 mW/°C for TC > 139°C.
VGS
VGD
ID
Gate-Drain Voltage
Drain Current
V
mA
mW
dBm
°C
-3.5
Idss
PT
Total Power Dissipation[3]
RF Input Power
180
Pin max
Tch
+10
Channel Temperature
Storage Temperature
150
TSTG
°C
-65 to 150
ATF-36077 Electrical Specifications,
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol
NF
Parameters and Test Conditions
Noise Figure[1]
Gain at NF[1]
Units
dB
Min.
Typ.
0.5
Max.
0.6
f = 12.0 GHz
f = 12.0 GHz
GA
dB
11.0
50
12.0
55
gm
Transconductance
Saturated Drain Current
Pinch-off Voltage
VDS = 1.5 V, VGS = 0 V
VDS = 1.5 V, VGS = 0 V
VDS = 1.5 V, IDS = 10% of Idss
mS
mA
V
Idss
15
25
45
Vp 10 %
-1.0
-0.35
-0.15
Note:
1. Measured in a fixed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°.
ATF-36077 Characterization Information,
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions
Units
Typ.
NF
Noise Figure (Tuned Circuit)
f = 4 GHz
f = 12 GHz
dB
dB
0.3[2]
0.5
GA
Gain at Noise Figure (Tuned Circuit)
f = 4 GHz
f = 12 GHz
dB
dB
17
12
S12 off
P1dB
Reverse Isolation
f = 12 GHz, VDS = 1.5 V, VGS = -2 V
dB
14
Output Power at 1 dB Gain Compression
f = 4 GHz
f = 12 GHz
dBm
dBm
5
5
VGS 10 mA
Gate to Source Voltage for IDS = 10 mA
VDS = 1.5 V
V
-0.2
Note:
2. See noise parameter table.
2
ATF-36077 Typical Scattering Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
Freq.
GHz
1.0
2.0
S11
S21
Mag.
S12
Mag.
S22
Mag.
0.99
0.97
0.94
0.90
0.86
0.82
0.78
0.75
0.72
0.69
0.66
0.63
0.61
0.60
0.58
0.57
0.56
0.57
Ang.
-17
dB
Ang.
163
147
132
116
102
88
dB
Ang.
78
Mag.
0.60
0.59
0.57
0.55
0.53
0.50
0.48
0.46
0.44
0.42
0.40
0.38
0.37
0.35
0.33
0.31
0.29
0.26
Ang.
-14
14.00
13.81
13.53
13.17
12.78
12.39
12.00
11.64
11.32
11.04
10.81
10.63
10.50
10.41
10.36
10.34
10.34
10.35
5.010
4.904
4.745
4.556
4.357
4.162
3.981
3.820
3.682
3.566
3.473
3.401
3.349
3.315
3.296
3.289
3.289
3.291
-36.08
-30.33
-27.25
-25.32
-24.04
-23.17
-22.58
-22.17
-21.90
-21.71
-21.57
-21.44
-21.32
-21.19
-21.04
-20.87
-20.69
-20.53
0.016
0.030
0.043
0.054
0.063
0.069
0.074
0.078
0.080
0.082
0.083
0.085
0.086
0.087
0.089
0.091
0.092
0.094
-33
66
-28
3.0
-49
54
-41
4.0
-65
43
-54
5.0
-79
33
-66
6.0
-93
24
-78
7.0
-107
-120
-133
-146
-159
-172
175
161
147
131
114
97
75
16
-89
8.0
62
8
-99
9.0
49
1
-109
-119
-129
-139
-149
-160
-171
177
164
148
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
37
-6
25
-13
-19
-25
-32
-39
-47
-55
-65
13
1
-12
-24
-37
-50
-64
ATF-36077 Typical “Off ” Scattering Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 0 mA, VGS = -2 V
Freq.
GHz
S11
S21
Mag.
S21
Mag.
S22
Mag.
0.96
0.95
0.94
Ang.
-139
-152
-166
dB
Ang.
-43
-56
-69
dB
Ang.
-43
-56
-68
Mag.
0.97
0.97
0.96
Ang.
-125
-137
-149
11.0
12.0
13.0
-14.2
-14.0
-13.8
0.19
0.20
0.20
-14.2
-14.0
-13.8
0.19
0.20
0.20
3
ATF-36077 Typical Noise Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
25
20
15
10
5
[1]
Freq.
GHz
Fmin
dB
Γopt
Rn/Zo
-
Mag.
0.95
0.90
0.81
0.73
0.66
0.60
0.54
0.48
0.43
0.39
Ang.
12
1
2
0.30
0.30
0.30
0.30
0.37
0.44
0.50
0.56
0.61
0.65
0.40
0.20
0.17
0.13
0.09
0.05
0.03
0.02
0.05
0.09
MSG MAG
25
S21
4
51
6
76
8
102
129
156
-174
-139
-100
10
12
14
16
18
0
0
4
8
12
16
20
FREQUENCY (GHz)
Figure 2. Maximum Available Gain, Maximum Stable Gain and
Insertion Power Gain vs. Frequency. VDS = 1.5 V, ID = 10 mA.
Note:
1. The Fmin values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses that
will be encountered when matching to the optimum reflection coefficient (Γopt) at these
frequencies. The theoretical Fmin values for these frequencies are: 0.10 dB at 2 GHz, 0.20 dB
at 4 GHz, and 0.29 dB at 6 GHz. Noise parameters are derived from associated s parameters,
packaged device measurements at 12 GHz, and die level measurements from 6 to 18 GHz.
77 Package Dimensions
Part Number Ordering Information
1.02
(0.040)
Part Number
ATF-36077-TRl[2]
ATF-36077-STR
No. of Devices
1000
Container
7" Reel
strip
SOURCE
4
.51
(0.020)
100
1
3
Note:
GATE
DRAIN
2. For more information, see “Tape and Reel Packaging for Semiconduc-
tor Devices,” in “Communications Components”Designer‘s Catalog.
SOURCE
2
1.78
(0.070)
1.75
(0.069)
1.22
(0.048)
5.28
(0.208)
.53
.10
(0.021)
(0.004)
TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES).
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5965-8726E
AV02-1222EN - April 29, 2008
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