ATF-36163 [AGILENT]
1.5-18 GHz Surface Mount Pseudomorphic HEMT; 1.5-18千兆赫表面贴装赝HEMT型号: | ATF-36163 |
厂家: | AGILENT TECHNOLOGIES, LTD. |
描述: | 1.5-18 GHz Surface Mount Pseudomorphic HEMT |
文件: | 总10页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1.5–18 GHz Surface Mount
Pseudomorphic HEMT
Technical Data
ATF-36163
Features
• Low Minimum Noise Figure:
1 dB Typical at 12 GHz
0.6 dB Typical at 4 GHz
• Associated Gain:
9.4 dB Typical at 12 GHz
15.8 dB Typical at 4 GHz
• Maximum Available Gain:
11 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Cost Surface Mount
Small Plastic Package
• Tape-and-Reel Packaging
Option Available
Surface Mount Package
SOT-363 (SC-70)
Additionally, the ATF-36163 has
low noise-resistance, which
reduces the sensitivity of noise
performance to variations in
input impedance match. This
feature makes the design of broad
band low noise amplifiers much
easier. The performance of the
ATF-36163 makes this device the
ideal choice for use in the 2nd or
3rd stage of low noise cascades.
The repeatable performance and
consistency make it appropriate
for use in Ku-band Direct
Broadcast Satellite (DBS) TV
systems, C-band TV Receive Only
(TVRO) LNAs, Multichannel
Multipoint Distribution Systems
(MMDS), X-band Radar detector
and other low noise amplifiers
operating in the 1.5–18 GHz
frequency range.
Pin Connections and
Package Marking
SOURCE
SOURCE
GATE
DRAIN
SOURCE
SOURCE
Applications
• 12 GHz DBS Downconverters
• 4 GHz TVRO Downconverters
• S or L Band Low Noise
Amplifiers
Note: Package marking provides
orientation and identification.
Description
This GaAs PHEMT device has a
nominal 0.2 micron gate length
with a total gate periphery
(width) of 200 microns. Proven
gold-based metallization system
and nitride passivation assure
rugged, reliable devices.
TheHewlett-PackardATF-36163
is a low-noise Pseudomorphic
High Electron Mobility Transistor
(PHEMT), intheSOT-363(SC-70)
package. When optimally matched
for minimum noise figure, it will
provide a noise figure of 1 dB at
12GHzand0.6 dBat4GHz.
5965-4747E
5-79
ATF-36163 Absolute Maximum Ratings[1]
Absolute
Maximum
Thermal Resistance:
Symbol
VDS
Parameter
Drain - Source Voltage
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Units
V
θch-c =160°C/W
+3
-3
Note:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
VGS
V
VGD
V
-3.5
ID
mA
mW
dBm
°C
Idss
PT
Total Power Dissipation
RF Input Power
180
Pin max
TCH
+10
Channel Temperature
Storage Temperature
150
TSTG
°C
-65to150
ATF-36163 Electrical Specifications
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol
NF
Parameters and Test Conditions
Noise Figure[1]
Gain at NF[1]
Units
dB
dB
mS
mA
V
Min. Typ. Max.
f=12.0GHz
f=12.0GHz
1.2
10
60
25
1.4[1]
G
9
gm
Transconductance
VDS =1.5V,VGS =0V
VDS =1.5V,VGS =0V
VDS =1.5V,IDS =10%ofIdss
IG =30µA
50
15
Idss
Saturated Drain Current
Pinchoff Voltage
40
Vp10%
BVGDO
-1.0 -0.35 -0.15
-3.5
Gate Drain Breakdown Voltage
V
Note:
1. Measured in a test circuit tuned for a typical device.
ATF-36163 Typical Parameters
TC = 25°C, ZO = 50 Ω, Vds = 2 V, Ids = 15 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions
Units
Typ.
Fmin
Minimum Noise Figure (Γsource = Γopt
)
f=4GHz
f=12GHz
dB
dB
0.6
1.0
Ga
Gmax
P1dB
VGS
Associated Gain
f=4GHz
f=12GHz
dB
dB
15.8
9.4
Maximum Available Gain[1]
f = 4 GHz
f = 12 GHz
dB
dB
17.2
10.9
Output Power at 1 dB Gain Compression
under the power matched condition
f=4GHz
f=12GHz
dBm
dBm
5
5
Gate to Source Voltage for IDS = 15 mA
VDS =2.0V
V
-0.2
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1, which is shown on the S-parameters tables.
5-80
ATF-36163 Typical Scattering Parameters,Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
[1]
Freq.
S11
S21
S12
S22
K
—
Gmax
GHz
Mag.
Ang.
dB
Mag. Ang.
dB
Mag. Ang. Mag. Ang.
dB
0.5
1
0.99
0.98
0.96
0.93
0.87
0.81
0.75
0.67
0.61
0.57
0.57
0.59
0.63
0.67
0.72
0.78
0.82
0.87
0.90
-11
-22
-42
-61
-83
-106
-131
-158
176
143
108
76
12.85
12.70
12.48
12.37
12.30
12.16
11.94
11.47
11.01
10.47
9.66
4.39
4.31
4.21
4.15
4.12
4.06
3.95
3.75
3.55
3.34
3.04
2.67
2.34
2.02
1.74
1.50
1.29
1.07
0.83
168
158
138
118
97
-37.72
-31.70
-26.02
-22.73
-20.45
-18.71
-17.52
-16.77
-16.36
-15.97
-15.92
-16.48
-17.14
-18.27
-19.74
-21.41
-23.10
-25.04
-29.12
0.01
0.03
0.05
0.07
0.10
0.12
0.13
0.15
0.15
0.16
0.16
0.15
0.14
0.12
0.10
0.09
0.07
0.06
0.04
79
71
0.51
0.50
0.48
0.45
0.40
0.34
0.27
0.18
0.10
0.12
0.22
0.33
0.41
0.49
0.56
0.63
0.67
0.73
0.78
-9
-18
-36
-53
-71
-92
-116
-144
174
93
0.11
0.17
0.24
0.33
0.43
0.51
0.58
0.69
0.79
0.85
0.91
0.99
1.07
1.18
1.30
1.38
1.44
1.46
1.80
25.24
22.26
19.28
17.56
16.38
15.43
14.73
14.12
13.69
13.22
12.80
12.50
10.65
9.64
2
55
3
40
4
23
5
76
6
6
55
-12
-30
-45
-61
-77
-93
-106
-119
-129
-138
-144
-151
-159
7
33
8
12
9
-10
-32
-54
-74
-93
-111
-128
-146
-164
178
10
11
12
13
14
15
16
17
18
53
8.53
28
50
7.39
9
26
6
-11
-24
-38
-52
6.10
-8
4.81
-22
-33
-43
-53
-65
8.99
3.49
8.81
2.20
8.70
0.59
8.79
-1.63
8.58
Note:
2.4
2.0
1.6
1.2
0.8
24
20
16
12
8
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1.
ATF-36163 Typical Noise Parameters
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
Freq.
GHz
Fmin
dB
Ga
dB
Γopt
Rn/ZO
-
Mag.
Ang.
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.48
0.53
0.57
0.61
0.66
0.71
0.77
0.83
0.89
0.97
1.05
1.14
1.24
1.37
1.51
1.68
1.89
18.77
16.75
15.17
14.14
13.23
12.06
11.22
10.50
10.02
9.44
8.92
8.45
8.12
8.08
8.11
7.97
7.59
0.78
0.75
0.68
0.60
0.55
0.48
0.38
0.32
0.23
0.18
0.20
0.26
0.36
0.48
0.59
0.64
0.70
28
41
55
71
88
105
119
138
170
-141
-92
-46
-16
4
0.38
0.32
0.26
0.20
0.15
0.12
0.10
0.07
0.07
0.09
0.13
0.21
0.32
0.44
0.60
0.79
1.15
0.4
0
4
0
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
Figure 1. ATF-36163 Minimum Noise Figure and
Associated Gain vs. Frequency for
VDS = 1.5 V, ID = 10 mA.
24
20
16
MSG
MAG
12
19
34
51
2
|S21|
8
4
0
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
Figure 2. Maximum Available Gain, Maximum
Stable Gain & Insertion Power Gain vs.
Frequency for VDS = 1.5 V, ID = 10 mA.
5-81
ATF-36163 Typical Scattering Parameters,Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 15 mA
[1]
Freq.
S11
S21
S12
S22
K
—
Gmax
GHz
Mag.
Ang.
dB
Mag. Ang.
dB
Mag. Ang. Mag. Ang.
dB
0.5
1
0.99
0.98
0.96
0.92
0.86
0.80
0.74
0.66
0.59
0.56
0.56
0.59
0.63
0.68
0.73
0.79
0.83
0.87
0.91
-12
-22
-43
-63
-85
-108
-133
-160
173
141
106
74
13.56
13.40
13.16
13.00
12.87
12.68
12.38
11.85
11.33
10.74
9.89
4.76
4.68
4.55
4.47
4.40
4.30
4.16
3.91
3.68
3.44
3.12
2.74
2.40
2.06
1.78
1.53
1.32
1.10
0.86
168
157
137
116
96
-38.42
-32.40
-26.56
-23.22
-21.01
-19.25
-18.13
-17.39
-16.95
-16.54
-16.42
-16.83
-17.39
-18.42
-19.74
-21.31
-22.85
-24.73
-28.87
0.01
0.02
0.05
0.07
0.09
0.11
0.12
0.14
0.14
0.15
0.15
0.14
0.14
0.12
0.10
0.09
0.07
0.06
0.04
79
71
0.45
0.45
0.43
0.40
0.35
0.28
0.21
0.13
0.06
0.12
0.23
0.34
0.42
0.50
0.57
0.64
0.68
0.73
0.78
-9
-18
-36
-52
-70
-92
-116
-146
156
73
0.12
0.18
0.26
0.35
0.46
0.55
0.62
0.74
0.84
0.90
0.95
1.03
1.10
1.19
1.29
1.35
1.39
1.39
1.67
25.82
22.86
19.87
18.13
16.94
15.98
15.25
14.62
14.14
13.63
13.16
11.78
10.62
9.72
2
56
3
40
4
24
5
75
7
6
53
-11
-28
-42
-58
-73
-88
-102
-115
-124
-133
-139
-148
-155
7
31
8
11
9
-11
-33
-54
-74
-93
-110
-127
-144
-163
180
10
11
12
13
14
15
16
17
18
44
8.74
23
6
49
7.59
25
5
-12
-25
-38
-53
6.29
-10
-23
-34
-44
-54
-66
5.01
9.15
3.70
8.99
2.43
8.93
0.84
9.06
-1.33
8.92
Note:
2.4
2.0
1.6
1.2
0.8
24
20
16
12
8
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1.
ATF-36163 Typical Noise Parameters
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 15 mA
Freq.
GHz
Fmin
dB
Ga
dB
Γopt
Rn/ZO
-
Mag.
Ang.
0.4
0
4
0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.49
0.54
0.58
0.63
0.68
0.73
0.79
0.85
0.91
0.99
1.07
1.17
1.27
1.40
1.54
1.72
1.93
18.87
17.20
15.75
14.49
13.61
12.36
11.54
10.82
10.32
9.73
9.22
8.68
8.41
8.36
8.37
8.10
8.00
0.84
0.74
0.66
0.59
0.54
0.46
0.37
0.30
0.21
0.17
0.20
0.26
0.38
0.49
0.60
0.62
0.71
28
42
57
72
90
106
121
140
174
-133
-83
-40
-12
7
0.38
0.31
0.25
0.19
0.15
0.11
0.09
0.08
0.08
0.10
0.14
0.22
0.34
0.46
0.64
0.85
1.18
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
Figure 3. ATF-36163 Minimum Noise Figure and
Associated Gain vs. Frequency for
DS = 1.5 V, ID = 15 mA.
V
24
20
16
MSG
12
MAG
2
|S21|
21
35
52
8
4
0
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
Figure 4. Maximum Available Gain, Maximum
Stable Gain & Insertion Power Gain vs.
Frequency for VDS = 1.5 V, ID = 15 mA.
5-82
ATF-36163 Typical Scattering Parameters,Common Source, ZO = 50 Ω, VDS = 2.0 V, ID = 10 mA
Freq.
GHz
S11
Mag. Ang.
S21
Mag. Ang.
S12
S22
K
–
Gmax[1]
dB
dB
dB
Mag. Ang. Mag. Ang.
0.5
1
0.99
0.99
0.96
0.93
0.87
0.81
0.75
0.67
0.60
0.57
0.56
0.58
0.62
0.67
0.72
0.78
0.82
0.87
0.91
-11
-22
-42
-62
-83
-106
-131
-157
176
144
109
77
13.06
12.90
12.69
12.57
12.51
12.38
12.15
11.70
11.25
10.73
9.95
4.50
4.42
4.31
4.25
4.22
4.16
4.05
3.84
3.65
3.44
3.14
2.77
2.44
2.11
1.83
1.58
1.36
1.13
0.88
168
158
138
118
97
-37.72
-32.04
-26.38
-22.97
-20.72
-18.94
-17.79
-17.08
-16.65
-16.25
-16.25
-16.77
-17.39
-18.56
-19.91
-21.51
-23.10
-24.88
-28.64
0.01
0.03
0.05
0.07
0.09
0.11
0.13 -12
0.14 -30
0.15 -44
0.15 -60
0.15 -76
0.15 -91
0.14 -104
0.12 -117
0.10 -126
0.08 -134
0.07 -139
0.06 -147
0.04 -153
79
71
56
40
23
6
0.55
0.55
0.53
0.50
0.44
0.38
0.31
0.21
0.13
0.10
0.18
0.29
0.37
0.46
0.53
0.60
0.65
0.71
0.78
-9
-18
-35
-52
-70
-90
-112
-137
-168
115
61
0.11
0.16
0.24
0.32
0.42
0.51
0.58
0.69
0.79
0.85
0.91
1.00
1.08
1.19
1.31
1.38
1.42
1.38
1.63
25.46
22.46
19.50
17.77
16.61
15.67
14.98
14.38
13.96
13.50
13.10
12.52
10.82
9.85
2
3
4
5
76
6
55
7
33
8
13
9
-10
-32
-53
-73
-93
-110
-128
-146
-165
177
10
11
12
13
14
15
16
17
18
8.86
32
50
7.75
12
-5
-19
-30
-40
-50
-63
26
6
-10
-24
-37
-52
6.49
5.24
9.24
3.96
9.07
2.68
9.03
1.08
9.28
-1.16
9.06
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1.
2.4
2.0
1.6
1.2
0.8
24
20
16
12
8
ATF-36163 Typical Noise Parameters
Common Source, ZO = 50 Ω, VDS = 2.0 V, ID = 10 mA
Freq.
GHz
Fmin
dB
Ga
dB
Γopt
Rn/ZO
Mag.
Ang.
-
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.46
0.50
0.54
0.59
0.63
0.68
0.74
0.80
0.86
0.94
1.02
1.11
1.22
1.35
1.51
1.69
1.92
18.60
16.75
15.55
14.20
13.37
12.12
11.35
10.59
10.11
9.57
9.08
8.59
8.30
8.29
8.32
8.07
7.68
0.84
0.76
0.67
0.61
0.55
0.49
0.39
0.33
0.23
0.17
0.18
0.24
0.34
0.47
0.58
0.60
0.66
28
41
56
70
88
103
118
135
165
-145
-93
-47
-16
5
0.38
0.31
0.25
0.20
0.15
0.12
0.10
0.07
0.07
0.09
0.12
0.19
0.30
0.42
0.57
0.76
1.10
0.4
0
4
0
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
Figure 5. ATF-36163 Minimum Noise Figure and
Associated Gain vs. Frequency for
VDS = 2.0 V, ID = 10 mA.
24
20
16
MSG
12
19
34
50
MAG
2
|S21|
8
4
0
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
Figure 6. Maximum Available Gain, Maximum
Stable Gain & Insertion Power Gain vs.
Frequency for VDS = 2.0 V, ID = 10 mA.
5-83
ATF-36163 Typical Scattering Parameters,Common Source, ZO = 50 Ω, VDS = 2 V, ID = 15 mA
Freq.
GHz
S11
Mag. Ang.
S21
Mag. Ang.
S12
S22
K
–
Gmax[1]
dB
dB
dB
Mag. Ang. Mag. Ang.
0.5
1
0.99
0.98
0.96
0.92
0.86
0.79
0.73
0.65
0.59
0.55
0.56
0.58
0.63
0.68
0.73
0.78
0.83
0.88
0.91
-12
-22
-43
-63
-85
-108
-133
-160
173
141
107
75
13.85
13.70
13.45
13.29
13.16
12.96
12.67
12.13
11.63
11.06
10.23
9.11
4.93
4.84
4.70
4.62
4.55
4.45
4.30
4.04
3.81
3.57
3.25
2.86
2.51
2.17
1.88
1.63
1.41
1.18
0.91
168
157
137
117
96
-38.42
-32.40
-26.74
-23.48
-21.31
-19.58
-18.42
-17.72
-17.27
-16.83
-16.77
-17.14
-17.72
-18.71
-20.00
-21.41
-22.73
-24.44
-27.96
0.01
0.02
0.05
0.07
0.09
0.11
0.12 -10
0.13 -28
0.14 -42
0.14 -57
0.15 -72
0.14 -87
0.13 -99
0.12 -112
0.10 -121
0.09 -129
0.07 -135
0.06 -143
0.04 -149
79
71
56
40
24
7
0.51
0.50
0.48
0.45
0.40
0.33
0.26
0.17
0.09
0.09
0.19
0.30
0.38
0.47
0.54
0.61
0.66
0.72
0.78
-9
-18
-35
-52
-69
-90
-112
-136
-171
93
0.12
0.17
0.26
0.35
0.46
0.55
0.62
0.75
0.84
0.90
0.96
1.04
1.11
1.20
1.30
1.35
1.36
1.31
1.50
26.10
23.11
20.13
18.40
17.22
16.26
15.54
14.93
14.46
13.95
13.50
11.93
10.85
10.00
9.45
2
3
4
5
75
6
53
7
32
8
11
9
-11
-32
-53
-73
-92
-110
-127
-145
-164
178
10
11
12
13
14
15
16
17
18
51
27
49
8.00
9
26
6
-11
-24
-38
-52
6.75
-7
5.49
-20
-31
-41
-51
-63
4.22
9.30
2.99
9.31
1.42
9.56
-0.79
9.44
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1.
2.4
2.0
1.6
1.2
0.8
24
20
16
12
8
ATF-36163 Typical Noise Parameters
Common Source, ZO = 50 Ω, VDS = 2.0 V, ID = 15 mA
Freq.
GHz
Fmin
dB
Ga
dB
Γopt
Rn/ZO
Mag.
Ang.
-
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.48
0.52
0.56
0.61
0.65
0.70
0.76
0.82
0.88
0.95
1.03
1.12
1.23
1.35
1.49
1.65
1.86
18.97
17.27
15.75
14.54
13.68
12.47
11.66
10.94
10.44
9.88
9.38
8.90
8.63
8.59
8.63
8.68
8.32
0.83
0.74
0.67
0.60
0.55
0.46
0.37
0.31
0.21
0.15
0.18
0.25
0.36
0.48
0.58
0.65
0.70
28
41
56
71
89
104
118
136
168
-137
-85
-41
-13
7
0.37
0.31
0.25
0.19
0.15
0.11
0.09
0.08
0.07
0.09
0.13
0.21
0.32
0.44
0.60
0.79
1.10
0.4
0
4
0
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
Figure 7. ATF-36163 Minimum Noise Figure and
Associated Gain vs. Frequency for
VDS = 2 V, ID = 15 mA.
24
20
16
12
8
MSG
2
20
34
51
MAG
|S21|
4
0
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
Figure 8. Maximum Available Gain, Maximum
Stable Gain & Insertion Power Gain vs.
Frequency for VDS = 2 V, ID = 15 mA.
5-84
ATF-36163 Typical “Off” Scattering Parameters, Common Source, ZO = 50 Ω,VDS = 0V,
V = 0V
GS
Freq.
GHz
S11
Ang.
S21
Mag.
S12
Mag.
S22
Mag.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
1
2
3
4
5
6
7
8
0.998
0.993
0.99
0.98
0.96
0.94
0.92
0.89
0.86
0.84
0.83
0.83
0.85
0.86
0.87
0.90
0.93
0.93
0.93
-10
-20
-37
-55
-74
-95
-118
-142
-168
162
128
94
64
36
12
-8
-24
-39
-53
-46.02
-39.17
-32.77
-28.64
-25.35
-22.62
-20.45
-18.79
-17.02
-15.70
-14.85
-14.66
-14.85
-15.76
-17.14
-18.71
-20.45
-23.35
-27.96
0.01
0.01
0.02
0.04
0.05
0.07
0.10
0.12
0.14
0.16
0.18
0.19
0.18
0.16
0.14
0.12
0.10
0.07
0.04
80
81
75
67
56
42
27
11
-6
-24
-44
-64
-83
-101
-116
-129
-140
-154
-161
-46.02
-39.17
-32.77
-28.64
-25.19
-22.50
-20.45
-18.71
-17.02
-15.70
-14.85
-14.66
-14.85
-15.76
-17.08
-18.71
-20.45
-23.10
-28.18
0.01
0.01
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.19
0.18
0.16
0.14
0.12
0.10
0.07
0.04
86
83
76
68
57
42
27
11
-5
-24
-44
-64
-83
-101
-115
-129
-140
-152
-161
0.703
0.701
0.70
0.71
0.73
0.74
0.75
0.77
0.78
0.81
0.83
0.84
0.85
0.87
0.89
0.89
0.90
0.90
0.90
170
160
139
119
99
81
63
46
30
9
16
3
10
11
12
13
14
15
16
17
18
-10
-22
-34
-44
-53
-62
-71
-81
ATF-36163 Typical “Off” Scattering Parameters, Common Source, ZO = 50 Ω,VDS = 2.0V,
V = -1.5V
GS
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
1
2
3
4
5
6
7
8
0.97
0.98
0.99
0.98
0.97
0.96
0.94
0.92
0.89
0.85
0.79
0.74
0.72
0.71
0.75
0.82
0.89
0.91
0.92
-8
-16
-30
-43
-57
-72
-87
-103
-119
-136
-158
177
149
114
74
-34.89
-28.87
-22.85
-19.33
-16.71
-14.42
-12.62
-10.90
-9.60
-8.09
-6.73
-5.85
-5.71
-6.54
-8.95
-12.80
-18.49
-24.88
-27.54
0.02
0.04
0.07
0.11
0.15
0.19
0.23
0.29
0.33
0.39
0.46
0.51
0.52
0.47
0.36
0.23
0.12
0.06
0.04
82
74
59
44
29
-34.89
-28.87
-22.97
-19.33
-16.71
-14.47
-12.65
-10.96
-9.63
-8.09
-6.73
-5.87
-5.71
-6.52
-8.92
-12.69
-18.20
-24.44
-27.96
0.02
0.04
0.07
0.11
0.15
0.19
0.23
0.28
0.33
0.39
0.46
0.51
0.52
0.47
0.36
0.23
0.12
0.06
0.04
81
73
59
44
30
0.999
0.998
0.995
0.98
0.97
0.95
0.94
0.92
0.89
0.83
0.79
0.75
0.73
0.74
0.79
0.85
0.90
0.91
0.90
-7
-14
-29
-43
-57
-74
-91
-107
-125
-148
-174
156
123
86
14
-2
14
-2
-20
-37
-56
-79
-106
-136
-170
155
123
94
-20
-37
-56
-79
-106
-136
-170
156
123
95
9
10
11
12
13
14
15
16
17
18
50
18
-8
-30
-50
35
5
-21
-42
79
70
84
69
5-85
1.9 dB
1.4 dB
1.3 dB
1.2 dB
1.1 dB
9.5 dB
10.5 dB
11.5 dB
Figure 9. Smith Chart with Noise Figure and Available
Gain Circles at 12 GHz, VDS = 1.5 V, ID = 10 mA.
Phase Reference Planes
SOT-363 PCB Layout
The positions of the reference
planes used to measure S-
A PCB pad layout for the minia-
tureSOT-363(SC-70)package
used by the ATF-36163 is shown
in Figure 11 (dimensions are in
inches). This layout provides
ample allowance for package
placement by automated
assembly equipment. The layout
is shown with a nominal SOT-363
package footprint superimposed
on the PCB pads.
Parameters and to specify Γopt for
the Noise Parameters are shown
in Figure 10. As seen in the
illustration, the reference planes
are located at the extremities of
the package leads.
REFERENCE
PLANES
0.026
TEST CIRCUIT
0.075
Figure 10. Reference Planes.
0.035
0.016
Figure 11. PCB Pad Layout
(Dimensions in Inches).
5-86
Package Dimensions
Outline 63 (SOT-363/SC-70)
1.30 (0.051)
REF.
2.20 (0.087)
2.00 (0.079)
1.35 (0.053)
1.15 (0.045)
0.650 BSC (0.025)
0.425 (0.017)
TYP.
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.30 REF.
1.00 (0.039)
0.80 (0.031)
0.20 (0.008)
0.10 (0.004)
10°
0.30 (0.012)
0.10 (0.004)
0.25 (0.010)
0.15 (0.006)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Part Number Ordering Information
No. of
Part Number
ATF-36163-TR1
ATF-36163-BLK
Devices
Container
7" Reel
3000
100
antistatic bag
5-87
Device Orientation
TOP VIEW
4 mm
END VIEW
REEL
8 mm
36
36
36
36
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions and Product Orientation
For Outline 63
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
8° MAX.
5° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
P
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE WIDTH
THICKNESS
W
8.00 ± 0.30
0.315 ± 0.012
t
0.255 ± 0.013 0.010 ± 0.0005
5.4 ± 0.10 0.205 ± 0.004
0.062 ± 0.001 0.0025 ± 0.00004
1
COVER TAPE
WIDTH
C
TAPE THICKNESS
T
t
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 ± 0.05
0.079 ± 0.002
5-88
相关型号:
ATF-36163-BLKG
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 6 PIN
AGILENT
ATF-36163-TR1G
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 6 PIN
AGILENT
ATF-36163-TR2
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, SC-70, 6 PIN
AGILENT
ATF-36163-TR2G
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 6 PIN
AGILENT
ATF-38143-BLKG
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN
AGILENT
©2020 ICPDF网 联系我们和版权申明