AT-32063 [AGILENT]
Low Current, High Performance NPN Silicon Bipolar Transistor; 低电流，高性能硅NPN双极晶体管
| 型号： | AT-32063 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Low Current, High Performance NPN Silicon Bipolar Transistor |
| 文件： | 总8页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-32063
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 5 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes this device a
good fit for 900 MHz pager appli-
cations. Voltage breakdowns are
high enough for use at 5 volts.
Features
Description
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
The AT-32063 contains two high
performance NPN bipolar transis-
tors in a single SOT-363 package.
The devices are unconnected,
allowing flexibility in design. The
pin-out is convenient for cascode
amplifier designs. The SOT-363
package is an industry standard
plastic surface mount package.
• 900 MHz Performance:
1.1 dBNF,14.5 dBG
A
• Characterized for End-of-
Life Battery Use (2.7 V)
• SOT-363 (SC-70) Plastic
Package
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of the transistor yields extremely
high performance products that
can perform a multiplicity of
tasks. The 20 emitter finger
interdigitated geometry yields a
transistor that is easy to match to
and extremely fast, with moderate
power, low noise resistance, and
low operating currents.
• Tape-and-Reel Packaging
Option Available[1]
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett-Packard’s
10 GHzf , 30GHzf
Self-
t
max
Surface Mount Package
SOT-363 (SC-70)
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metallization in the fabrication of
these devices.
Optimized performance at 2.7 V
makes this device ideal for use in
900MHz, 1.8GHz, and2.4GHz
battery operated systems as an
Pin Connections and
Package Marking
1
2
3
6
5
4
B
1
E
1
C
2
C
1
E
2
B
2
5965-8921E
4-63
AT-32063 Absolute Maximum Ratings[1]
Thermal Resistance[2]:
θ =370°C/W
Absolute
Maximum
Symbol
Parameter
Units
jc
VEBO
VCBO
VCEO
IC
PT
Tj
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2,3]
Junction Temperature
Storage Temperature
V
V
V
mA
mW
°C
°C
1.5
11
5.5
40
150
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMountingSurface =25°C.
3. Derate at 2.7 mW/°C for TC > 94.5°C.
4. 150 mW per device.
150
TSTG
-65to150
Electrical Specifications, TA = 25°C
Symbol
NF
Parameters and Test Conditions
Units Min. Typ. Max.
Noise Figure; VCE = 2.7 V, IC = 5 mA
Associated Gain; VCE = 2.7 V, IC = 5 mA
Forward Current Transfer Ratio; VCE = 2.7 V, IC = 5 mA
Collector Cutoff Current; VCB = 3 V
Noise Figure; VEB = 1 V
f=0.9GHz
f=0.9GHz
dB
dB 12.5[2] 14.5[2]
1.1[2] 1.4[2]
GA
hFE
—
µA
µA
50
270
0.2
1.5
ICBO
IEBO
Notes:
1. All data is per individual transistor.
2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB;
output loss=0.3 dB.
50 Ω
50 Ω
W = 10
L = 450
W = 10
L = 100
W = 20
L = 60
TEST CIRCUIT
BOARD MATERIAL = 0.047 GETEK (ε = 4.3)
DIMENSIONS IN MILS
NOT TO SCALE
Figure 1. Test circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain,
stability, and a practical synthesizable match.
4-64
AT-32063 Characterization Information, TA = 25°C
Symbol
P1 dB
Parameters and Test Conditions
Units
dBm
dB
Typ.
12
Power at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA
Gain at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA
Output Third Order Intercept Point (opt tuning); VCE = 2.7 V, IC = 20 mA
f=0.9GHz
f=0.9GHz
f=0.9GHz
G1 dB
16
IP3
dBm
24
Typical Performance, TA = 25°C
2.00
20.0
15
14
1.50
15.0
13
12
1.00
0.50
0
10.0
5.0
0
11
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA
10
0.9
0.9
1.8
FREQUENCY (GHz)
2.4
0.9
1.8
FREQUENCY (GHz)
2.4
1.8
2.4
FREQUENCY (GHz)
Figure 2. Minimum Noise Figure vs.
Frequency and Current at VCE = 2.7 V.
Figure 3. Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
Figure 4. Power at 1 dB Gain
Compression vs. Frequency at
VCE=2.7V and IC = 20 mA.
18
15
25
20
12
9
15
10
6
2 mA
5 mA
10 mA
20 mA
5
0
3
0
0.9
1.8
2.4
0
0.5
1.0
1.5
2.0
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. 1 dB Compressed Gain vs.
Frequency at VCE = 2.7 V and
IC=20mA.
Figure 6. Third Order Intercept vs.
Frequency and Bias at VCE = 2.7 V, with
Optimal Tuning.
4-65
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 1 V, IC = 1 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.98
0.86
0.72
0.69
0.58
0.52
0.49
0.45
0.41
0.42
0.47
-11
-50
11.36
10.14
8.39
7.87
5.87
4.83
4.3
3.16
1.84
0.17
-1.15
3.7
171
138
113
108
85
-34.77
-22.02
-18.97
-18.61
-17.8
-17.72
-17.69
-17.68
-16.99
-13.67
-9.84
0.02
0.08
0.11
0.12
0.13
0.13
0.13
0.13
0.14
0.21
0.32
83
59
43
41
31
28
28
30
37
45
38
0.99
0.91
0.82
0.8
0.73
0.7
-4
-20
-31
-32
-41
-45
-48
-54
-63
-81
-107
3.21
2.63
2.48
1.97
1.74
1.64
1.44
1.24
1.02
0.88
-82
-88
-119
-134
-145
-165
166
124
93
74
67
0.68
0.67
0.64
0.6
55
39
16
-2
0.54
25
20
AT-32063 Typical Noise Parameters
MSG
Common Emitter, Z = 50 Ω, V = 1 V, I = 1 mA
o
CE
C
15
Freq.
GHz
F
dB
GA
dB
Gopt
Mag.
Rn
—
min
10
5
MAG
Ang.
MSG
5.1
0.9
1.8
2.4
0.71
1.37
1.80
10.4
8.3
7.2
0.76
0.60
0.50
50
112
155
0.44
0.24
0.10
S21
0
-5
0.1
1.1
2.1
3.1
4.1
FREQUENCY (GHz)
Figure 7. Gain vs. Frequency at
CE=1V, IC = 1mA.
V
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.96
0.77
0.59
0.55
0.42
0.37
0.34
0.29
0.26
0.28
0.33
-12
-55
16.46
14.73
12.37
11.74
9.26
6.66
5.45
4.15
3.86
2.90
2.52
2.33
2.01
1.69
1.37
1.17
169
132
107
103
83
-37.32
-25.13
-22.42
-22.07
-20.79
-20.13
-19.67
-18.68
-16.95
-13.75
-10.70
0.014
0.055
0.076
0.079
0.091
0.099
0.104
0.116
0.142
0.205
0.292
82
59
48
47
44
45
46
48
50
48
41
0.98
0.87
0.76
0.74
0.69
0.67
0.66
0.65
0.64
0.61
0.57
-5
-21
-29
-30
-36
-39
-41
-46
-53
-68
-89
-87
-93
-121
-135
-145
-164
167
124
94
8.01
73
7.35
67
6.05
56
4.54
41
2.73
20
1.36
1
30
25
AT-32063 Typical Noise Parameters
20
MSG
Common Emitter, Z = 50 Ω, V = 2.7 V, I = 2 mA
o
CE
C
15
10
5
Freq.
GHz
F
dB
GA
dB
Gopt
Mag.
Rn
—
min
MAG
Ang.
MSG
S21
0.9
1.8
2.4
0.78
1.25
1.57
14.3
10.7
9.1
0.65
0.45
0.35
50
105
145
0.31
0.20
0.13
0
0.1
1.1
2.1
3.1
4.1
5.1
FREQUENCY (GHz)
Figure 8. Gain vs. Frequency at
VCE=2.7 V, IC = 2mA.
4-66
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.87
0.52
0.34
0.31
0.22
0.19
0.17
0.14
0.12
0.16
0.22
-19
-72
23.36
19.21
15.40
14.60
11.54
10.12
9.33
14.72
9.13
5.89
5.37
3.77
3.21
2.93
2.50
2.08
1.67
1.44
162
116
94
90
74
66
61
52
39
20
2
-37.77
-27.03
-24.01
-23.41
-20.85
-19.52
-18.72
-17.22
-15.25
-12.40
-10.03
0.013
0.045
0.063
0.067
0.091
0.106
0.116
0.138
0.173
0.240
0.315
80
60
58
58
58
58
57
56
52
44
33
0.96
0.72
0.62
0.61
0.58
0.57
0.57
0.57
0.56
0.53
0.48
-9
-25
-28
-29
-33
-36
-38
-42
-49
-63
-82
-101
-106
-129
-141
-150
-169
160
117
93
7.95
6.34
4.46
3.15
35
30
25
20
AT-32063 Typical Noise Parameters
MSG
Common Emitter, Z = 50 Ω, V = 2.7 V, I = 5 mA
o
CE
C
Freq.
GHz
F
dB
GA
dB
Gopt
Mag.
Rn
—
min
15
10
MAG
Ang.
0.9
1.8
2.4
0.98
1.50
1.77
16.4
11.6
10.1
0.45
0.29
0.33
51
100
153
0.23
0.16
0.11
MSG
S21
5
0
0.1
1.1
2.1
3.1
4.1
5.1
FREQUENCY (GHz)
Figure 9. Gain vs. Frequency at
VCE=2.7 V, IC = 5mA.
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 20 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.55
0.20
0.13
0.13
0.10
0.09
0.09
0.08
0.10
0.15
0.21
-41
-107
-137
-141
-164
-178
172
152
127
101
86
30.48
21.24
16.48
15.60
12.26
10.78
9.93
33.40
11.53
6.66
6.02
4.10
3.46
3.14
2.67
2.20
1.76
1.51
143
97
82
79
67
60
56
48
36
18
0
-39.81
-29.18
-24.63
-23.79
-20.43
-18.88
-17.98
-16.39
-14.4
0.010
0.035
0.059
0.065
0.095
0.114
0.126
0.151
0.191
0.261
0.334
74
72
72
71
68
66
64
60
54
43
31
0.83
0.56
0.53
0.53
0.52
0.53
0.53
0.53
0.52
0.48
0.44
-15
-20
-22
-22
-27
-31
-34
-39
-47
-61
-79
8.52
6.85
4.92
-11.68
-9.52
3.59
40
35
30
25
20
15
MSG
AT-32063 Typical Noise Parameters
Common Emitter, Z = 50 Ω, V = 2.7 V, I = 20 mA
o
CE
C
Freq.
GHz
F
dB
GA
dB
Gopt
Mag.
Rn
—
min
MAG
Ang.
MSG
4.1
10
0.9
1.8
2.4
1.51
1.78
1.96
17.9
12.7
10.6
0.13
0.20
0.28
88
178
235
0.20
0.13
0.08
S21
5
0
0.1
1.1
2.1
3.1
5.1
FREQUENCY (GHz)
Figure 10. Gain vs. Frequency at
VCE=2.7 V, IC = 20mA.
4-67
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 2 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.96
0.78
0.59
0.56
0.42
0.36
0.33
0.28
0.24
0.25
0.31
-12
-53
16.50
14.84
12.5
11.92
9.46
8.21
7.55
6.24
4.72
2.88
1.49
6.69
5.52
4.23
3.94
2.97
2.57
2.38
2.05
1.72
1.39
1.19
169
133
108
104
84
-38.44
-26.20
-23.4
0.012
0.049
0.068
0.070
0.082
0.089
0.094
0.105
0.129
0.189
0.272
82
60
50
49
46
47
48
50
53
52
45
0.98
0.88
0.79
0.77
0.72
0.70
0.69
0.69
0.68
0.66
0.63
-5
-19
-27
-28
-33
-36
-39
-43
-50
-64
-83
-84
-90
-23.04
-21.71
-21.04
-20.56
-19.54
-17.76
-14.47
-11.32
-117
-131
-140
-159
171
126
95
74
68
57
43
21
3
30
25
MSG
AT-32063 Typical Noise Parameters
20
Common Emitter, Z = 50 Ω, V = 5 V, I = 2 mA
o
CE
C
15
10
5
MAG
Freq.
GHz
F
dB
GA
dB
Gopt
Mag.
Rn
—
min
Ang.
MSG
S21
0.9
1.8
2.4
0.75
1.26
1.60
13.7
10.8
9.6
0.74
0.55
0.45
47
101
139
0.37
0.22
0.13
0
0.1
1.1
2.1
3.1
4.1
5.1
FREQUENCY (GHz)
Figure 11. Gain vs. Frequency at
VCE=5 V, IC = 2mA.
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 20 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.61
0.22
0.13
0.12
0.08
0.06
0.06
0.04
0.05
0.10
0.16
-36
-91
30.56
21.75
17.02
16.14
12.80
11.31
10.46
9.02
33.74
12.23
7.10
6.41
4.36
3.68
3.33
2.83
2.33
1.86
1.6
145
98
83
81
68
62
58
50
39
21
3
-40.46
-29.90
-25.40
-24.56
-21.23
-19.69
-18.79
-17.21
-15.22
-12.48
-10.27
0.01
0.03
0.05
0.06
0.09
0.10
0.12
0.14
0.17
0.24
0.31
75
72
72
71
69
66
65
61
56
46
34
0.86
0.6
-14
-19
-21
-21
-26
-30
-32
-37
-45
-58
-75
-115
-118
-137
-148
-159
175
131
99
0.57
0.57
0.57
0.57
0.57
0.57
0.56
0.54
0.50
7.35
5.39
4.05
86
40
35
30
25
20
15
AT-32063 Typical Noise Parameters
MSG
Common Emitter, Z = 50 Ω, V = 5 V, I = 20 mA
o
CE
C
Freq.
GHz
F
dB
GA
dB
Gopt
Mag.
Rn
—
min
MAG
Ang.
MSG
4.1
0.9
1.8
2.4
1.50
1.78
1.96
18.6
13.3
11.3
0.18
0.19
0.24
74
147
198
0.20
0.16
0.14
10
S21
5
0
0.1
1.1
2.1
3.1
5.1
FREQUENCY (GHz)
Figure 12. Gain vs. Frequency at
VCE=5 V, IC = 20mA.
4-68
Package Dimensions
Outline 63 (SOT-363/SC-70)
1.30 (0.051)
REF.
2.20 (0.087)
2.00 (0.079)
1.35 (0.053)
1.15 (0.045)
0.650 BSC (0.025)
0.425 (0.017)
TYP.
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.30 REF.
1.00 (0.039)
0.80 (0.031)
0.20 (0.008)
0.10 (0.004)
10°
0.30 (0.012)
0.10 (0.004)
0.25 (0.010)
0.15 (0.006)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Part Number Ordering Information
Part Number
AT-32063-TR1
AT-32063-BLK
No. of Devices
Container
7" Reel
3000
100
antistatic bag
4-69
Device Orientation
REEL
TOP VIEW
4 mm
END VIEW
8 mm
CARRIER
TAPE
II
II
II
II
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions
For Outline 63
P
P
D
2
P
0
E
F
W
D
1
t
(CARRIER TAPE THICKNESS)
1
K
8° MAX.
5° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
P
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE WIDTH
THICKNESS
W
8.00 ± 0.30
0.255 ± 0.013
0.315 ± 0.012
0.010 ± 0.0005
t
1
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
P
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
2
4-70
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