AT-33225 [AGILENT]
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones; 4.8 V NPN型共发射极输出功率晶体管的AMPS ， ETACS手机
| 型号： | AT-33225 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
| 文件： | 总10页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4.8 V NPN Common Emitter
Output Power Transistor
for AMPS, ETACSPhones
Technical Data
AT-33225
Features
MSOP-3 Surface Mount
Plastic Package
Outline 25
Description
• 4.8 Volt Operation
Hewlett Packard’s AT-33225 is a
low cost, NPN power silicon
bipolar junction transistor housed
in a miniature MSOP-3 surface
mount plastic package. This
device is designed for use as an
output device for AMPS and
ETACS mobile phones. The
AT-33225 features over 1 watt
CW output power when operated
at 4.8 volts. Excellent gain and
superior efficiency make the
AT-33225 ideal for use in battery
powered systems.
• +31.0dBmPout @900MHz,
Typ.
• 70% Collector Efficiency
@ 900MHz,Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• -29 dBc IMD3 @ Pout of
24 dBm per tone, 900 MHz,
Typ.
Pin Configuration
COLLECTOR
4
• Internal Input Pre-Matching
Facilitates Cascading
• 50% Smaller than SOT-223
Package
The AT-33225 is fabricated with
Hewlett Packard’s 10 GHz Ft Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
EMITTER
1
2
3 EMITTER
BASE
Applications
• Output Power Device for
AMPS and ETACS Handsets
• 900 MHz ISM
4-71
5965-5910E
AT-33225 Absolute Maximum Ratings
Thermal Resistance[3]:
θ =40°C/W
Absolute
Maximum[1]
1.4
Symbol
VEBO
VCBO
VCEO
IC
Parameter
Units
V
V
V
mA
W
jc
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2]
Junction Temperature
Storage Temperature
Notes:
16.0
9.5
640
1.6
150
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 25 mW/°C for TC > 85°C.
Tc is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.
3. Using the liquid crystal technique,
VCE= 4.5V,Ic =100mA,Tj =150°C,
1-2 µm“hot-spot”resolution.
PT
Tj
TSTG
°C
°C
-65to150
Electrical Specifications, TC = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
Freq. = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A,
unless otherwise specified
Pout
Output Power[1]
Pin=+22dBm dBm +30.0 +31.0
ηC
Collector Efficiency[1]
Pin=+22dBm
%
60
70
IMD3 3rd Order Intermodulation Distortion, 2 Tone Test, F1=899MHz
dBc
-29
Pout eachTone=+24dBm[1]
F2=901MHz
Mismatch Tolerance, No Damage[1]
Pout =+31dBm
any phase, 2 sec duration
7:1
BVEBO Emitter-Base Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
IE = 0.4 mA, open collector
IC = 2.0 mA, open emitter
IC = 10.0 mA, open base
VCE =3V, IC =180mA
VCEO =5V
V
V
1.4
16.0
9.5
V
hFE
Forward Current Transfer Ratio
Collector Leakage Current
—
µA
80
150
330
30
ICEO
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (ETACS/ISM).
4-72
AT-33225 Typical Performance, TC = 25°C
Frequency = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A (ETACS/ISM), unless otherwise specified.
33
30
27
24
21
90
80
70
60
35
90
80
70
60
50
40
30
20
Γ
Γ
= 0.82 -163
Γ
Γ
= 0.82 -163
Γ
Γ
= 0.82 -163
source
= 0.67 -174
source
= 0.67 -174
source
= 0.67 -174
load
load
load
30
25
20
15
P
out
50
40
18
15
12
η
c
30
20
10
5
3.6 V
4.8 V
6.0 V
3.6 V
4.8 V
6.0 V
9
6
10
0
10
0
0
2
6
10
14
18
22 24
2
6
10
14
18
22 24
2
6
10
14
18
22 24
INPUT POWER (dBm)
INPUT POWER (dBm)
INPUT POWER (dBm)
Figure 1. Output Power and Collector
Efficiency vs. Input Power.
Figure 2. Output Power vs. Input
Power Over Bias Voltage.
Figure 3. Collector Efficiency vs.
Input Power Over Bias Voltage.
34
-15
5
Γ
Γ
= 0.82 -163
Γ
Γ
= 0.82 -163
Γ
Γ
= 0.82 -163
source
source
= 0.67 -174
source
= 0.67 -174
30
26
22
18
14
0
-5
= 0.67 -174
load
load
load
-20
-25
-30
-35
Output R.L.
-10
-15
-20
IMD
3
Input R.L.
TC = +85°C
TC = +25°C
TC = –40°C
-40
-45
-25
-30
10
6
IMD
5
11 13 15 17 19 21 23 25 27
800
850
900
950
1000
2
6
10
14
18
22 24
INPUT POWER (dBm)
OUTPUT POWER/TONE (dBm)
FREQUENCY (MHz)
Figure 4. Output Power vs. Input
Power Over Temperature.
Figure 5. IMD , IMD vs. Output
Figure 6. Input and Output Return
Loss vs. Frequency.
3
5
Power Per Tone.
4-73
AT-33225 Typical Performance, TC = 25°C
Frequency = 836.5 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit B (AMPS), unless otherwise specified.
33
30
27
24
21
90
80
70
60
35
90
80
70
60
50
40
30
20
Γ
Γ
= 0.81 -165
Γ
Γ
= 0.81 -165
Γ
Γ
= 0.81 -165
source
= 0.66 -174
source
= 0.66 -174
source
= 0.66 -174
load
load
load
30
25
20
15
P
out
50
40
18
15
12
η
c
30
20
10
5
3.6 V
4.8 V
6.0 V
3.6 V
4.8 V
6.0 V
9
6
10
0
10
0
0
2
6
10
14
18
22 24
2
6
10
14
18
22 24
2
6
10
14
18
22 24
INPUT POWER (dBm)
INPUT POWER (dBm)
INPUT POWER (dBm)
Figure 7. Output Power and Collector
Efficiency vs. Input Power.
Figure 8. Output Power vs. Input
Power Over Bias Voltage.
Figure 9. Collector Efficiency vs.
InputPower Over Bias Voltage.
5
Γ
Γ
= 0.81 -165
= 0.66 -174
source
load
0
Output R.L.
-5
-10
-15
Input R.L.
-20
-25
750
800
836.5
850
900
950
FREQUENCY (MHz)
Figure 10. Input and Output Return
Loss vs. Frequency.
4-74
10.0
9.5
9.0
8.5
8.0
7.5
AT-33225 Typical Large Signal Impedances
VCE =4.8V,ICQ =6mA,Pout =+31.0dBm
Freq.
MHz
Γ
Γ
load
source
Mag.
Ang.
Mag.
Ang.
750
800
850
900
950
0.77
0.80
0.82
0.82
0.83
-162
-169
-164
-163
-166
0.64
0.67
0.64
0.67
0.74
-174
-173
-175
-174
-175
7.0
6.5
6.0
0
2
4
6
8
10
Vcb (V)
Figure 11. Collector-Base
Capacitance vs. Collector-Base
Voltage ( DC Test) .
SPICE Model Parameters
Die Model
Packaged Model
Cbc
CPad
C
Die
RB
RB
CPad
LB2
LB3
CPad
B
CM
LE2 LE2
Die
Die Area = 1.2
CPad = 0.3 pF
E1
E2
LC1
Cce
RB
LB2
RB
LB3
C
Label
BF
Value
280
Label
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
Value
1E-9
1.11
3.598E-15
3
0.8E-12
0.4831
0.2508
0.001
0.999
6.16E-12
1.186
0.5965
0.752
0
LB1
R1
Cbe
B
IKF
ISE
NE
VAF
NF
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
CM
LE2 LE2
R1
Label
Cbc
Cbe 0.006 pF
Cce
CM
LB1
LB2
LB3
LE1
LE2
LC1 0.74 nH
RB
R1
Value
0.80 pF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
NR
LE1
3.17 pF
20.8 pF
0.63 nH
0.10 nH
0.87 nH
0.35 nH
0.78 nH
E
0
54.61
81
8.7E-13
1.587
1.511
0.9886
IRB
RBM
RE
0.01
1.27
0.107
RC
0.1 Ω
0.2 Ω
4-75
AT-33225 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω
VCE =3.6V,IC =200mA,TC =25°C
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
0.88
0.89
0.88
0.85
0.77
0.70
0.71
0.93
0.98
0.98
0.98
-164
-174
178
172
168
171
178
178
169
163
159
27.0
21.2
13.6
9.1
22.26
11.42
4.80
2.85
2.58
2.67
2.57
1.30
0.53
0.21
0.07
99
91
-34.9
-34.0
-30.5
-25.8
-23.2
-23.4
-26.0
-26.6
-20.5
-18.1
-16.4
0.018
0.020
0.030
0.051
0.069
0.068
0.050
0.047
0.094
0.125
0.151
26
32
47
51
40
25
14
93
86
78
72
0.58
0.57
0.56
0.49
0.34
0.36
0.59
0.98
0.97
0.93
0.90
-153
-168
-179
175
-177
-142
-133
-162
180
79
62
8.2
38
8.5
13
8.2
-10
-68
-97
-119
-163
2.3
-5.5
-13.6
-23.2
170
164
VCE =4.8V, IC =150mA, TC =25°C
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
0.87
0.88
0.88
0.85
0.78
0.72
0.72
0.93
0.98
0.98
0.98
-162
-172
179
172
169
172
178
177
169
163
159
27.1
21.4
13.8
9.2
22.76
11.69
4.91
2.89
2.58
2.62
2.53
1.35
0.56
0.22
0.08
100
91
-34.4
-33.6
-30.2
-26.0
-23.6
-24.0
-26.4
-26.7
-20.5
-18.1
-16.5
0.019
0.021
0.031
0.050
0.066
0.063
0.048
0.046
0.094
0.125
0.150
25
30
44
49
39
26
17
93
86
78
72
0.55
0.53
0.52
0.45
0.33
0.38
0.59
0.98
0.97
0.92
0.90
-149
-166
-178
177
78
61
8.2
37
-171
-138
-132
-161
-179
171
8.4
13
8.1
-9
2.6
-66
-97
-119
-159
-5.1
-13.0
-22.2
165
VCE =6.0V, IC =150mA, TC =25°C
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
0.87
0.88
0.88
0.85
0.78
0.72
0.73
0.92
0.98
0.98
0.98
-161
-172
179
173
169
172
177
177
169
163
158
27.3
21.5
13.9
9.3
23.07
11.86
4.97
2.93
2.59
2.63
2.53
1.37
0.57
0.23
0.08
100
91
-34.4
-33.6
-30.5
-26.2
-23.7
-24.2
-26.6
-26.7
-20.5
-18.1
-16.5
0.019
0.021
0.030
0.049
0.065
0.062
0.047
0.046
0.094
0.125
0.150
25
30
44
49
39
26
18
94
86
78
72
0.54
0.52
0.51
0.44
0.32
0.38
0.60
0.98
0.97
0.92
0.90
-149
-166
-178
177
78
61
8.3
37
-169
-137
-131
-160
-179
171
8.4
13
8.1
-9
2.7
-65
-96
-119
-158
-5.0
-12.7
-21.7
165
Typical Performance
40
40
30
40
MSG
30
MSG
MSG
30
20
10
0
MAG
MAG
2
MAG
2
20
10
0
20
10
0
MSG
MSG
MSG
2
|S
|
|S
|
|S |
21
21
21
-10
-10
-10
-20
-30
-20
-30
-20
-30
0.05
0.25
0.75
1.00
1.50
2.00
0.05
0.25
0.75
1.00
1.50
2.00
0.05
0.25
0.75
1.00
1.50
2.00
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Insertion Power Gain,
Figure 13. Insertion Power Gain,
Figure 14. Insertion Power Gain,
Maximum Available Gain, and Maximum Maximum Available Gain, and Maximum
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency, VCE = 6.0 V,
IC = 150 mA.
Stable Gain vs. Frequency, VCE = 3.6 V,
IC = 200 mA.
Stable Gain vs. Frequency, VCE = 4.8 V,
IC = 150 mA.
4-76
Test Circuit A: Test Circuit Board Layout @ 900 MHz (ETACS/ISM)
VBB
VCC
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
100.0 pF
100.0 pF
100.0 nF
7.5 pF
100.0 nF
100.0 pF
5.1 pF
VBB
VCC
C5
C3
R2
R3
C8 C9
L1
L2
R4
R5
R1
9/96
T1
C2
C6
1.5 µF
10.0 µF
100.0 pF
2.2 Ω
750.0 Ω
2.2 Ω
10.0 Ω
10.0 Ω
MBT 2222A
18.0 µH
18.0 µH
38.1 (1.5)
C1
C4
C7
C10
L1
L2
INPUT
OUTPUT
PA3 DEMO
B–MFG0141
76.2 (3.0)
Test Circuit:
CW Test
V
= 4.8 V
= 6.0 mA
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
CE
I
CQ
Freq. = 900 MHz
NOTE:
Dimensions are shown in millimeters (inches).
Thickness = 0.79 (.031)
Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz (ETACS/ISM)
V
BB
V
CC
CW Test
V
= 4.8 V
CE
I
= 6.0 mA
CQ
Freq. = 900 MHz
2.2 Ω
750 Ω
DC
Transistor
E
B
100 nF
2.2 Ω
C
10 Ω
10 Ω
100 pF
100 pF
100 nF
1.5 µF
10 µF
18 µH
18 µH
80 Ω
80 Ω
λ/4 @ 900 MHz
λ/4 @ 900 MHz
100 pF
50 Ω
RF OUT
100 pF
50 Ω
= 14.35 (.565)
5.1 pF
RF IN
7.5 pF
= 7.06 (.278)
4-77
Test Circuit B: Test Circuit Board Layout @ 836.5 MHz (AMPS)
VBB
VCC
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
100.0 pF
100.0 nF
9.5 pF
100.0 pF
100.0 pF
100.0 nF
6.8 pF
VBB
VCC
C6
C2
R2
R3
C8 C9
L1
R4
L2
R5
R1
9/96
T1
C5
C4
1.5 µF
10.0 µF
100.0 pF
2.2 Ω
750.0 Ω
2.2 Ω
10.0 Ω
10.0 Ω
MBT 2222A
18.0 µH
18.0 µH
38.1 (1.5)
C1
C7
C10
C3
L1
L2
INPUT
OUTPUT
PA3 DEMO
B–MFG0141
76.2 (3.0)
Test Circuit:
CW Test
V
= 4.8 V
= 6.0 mA
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
CE
I
CQ
Freq. = 836.5 MHz
NOTE:
Dimensions are shown in millimeters (inches).
Thickness = 0.79 (.031)
Test Circuit B: Test Circuit Schematic Diagram @ 836.5 MHz (AMPS)
V
BB
V
CC
CW Test
V
= 4.8 V
CE
I
= 6.0 mA
CQ
Freq. = 836.5 MHz
2.2 Ω
750 Ω
DC
Transistor
B
100 nF
2.2 Ω
C
E
10 Ω
10 Ω
100 pF
100 pF
100 nF
1.5 µF
10 µF
18 µH
18 µH
80 Ω
80 Ω
λ/4 @ 836.5 MHz
λ/4 @ 836.5 MHz
100 pF
50 Ω
RF OUT
100 pF
50 Ω
= 12.65 (.498)
6.8 pF
RF IN
9.5 pF
= 7.19 (.283)
4-78
Part Number Ordering Information
Part Number
AT-33225-TR1
AT-33225-BLK
No. of Devices
Container
7" Reel
1000
25
Carrier Tape
Package Dimensions
MSOP-3 Surface Mount Plastic Package
0.18/0.25
(.007/.010)
3.12/3.23
(.123/.127)
SEE DETAIL A
R 0.25 (.010) MAX
0.76 REF
(.030)
4.62/5.03
(.182/.198)
2.64/2.82
(.104/.111)
0.51 (.020) DIA X
0.15 (.006) DEEP
REF
1.09/1.42
(.043/.056)
1.22/1.60
(.048/.063)
PIN 1
0.76 REF
(.030)
1.91
(.075)
BASIC
4.80/5.00
(.189/.197)
TOP VIEW
SEATING
PLANE
LEAD TIP
COPLANARITY
0.10 (.004)
0.58/0.69
(.023/.027)
SIDE VIEW
R 0.20 (.008) MIN
R 0.20/0.33
(.008/.013)
0.10/0.25
0.25 (.010)
GAUGE PLANE
(.004/.010)
SEATING
PLANE
0° MIN/8° MAX
0.41/0.86
(.016/.034)
DETAIL A
NOTE:
DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
4-79
Tape Dimensions and Product Orientation for Package MSOP-3
REEL
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
2.00 ± 0.05
(.079 ± .002)
1.5 (.059)
0.30 ± 0.05
(.012 ± .002)
1.75 (.069)
4.0 (.157)
12.0 ± 0.3
(.472 ± .012)
R 0.3
(.012)
5.2
(.205)
5.50 ± 0.05
(.217 ± .002)
1.75
(.069)
8.0
(.315)
1.5
(.059)
5.2
(.205)
R 0.5 (.020) TYP
NOTES:
1. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
2. TOLERANCES: .X ± 0.1 (.XXX ± .004)
4-80
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