AT-332 [TE]
Voltage Variable Absorptive Attenuator DC - 2 GHz; 可变电压衰减器吸收DC - 2 GHz的
| 型号： | AT-332 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Voltage Variable Absorptive Attenuator DC - 2 GHz |
| 文件： | 总2页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Voltage Variable Absorptive Attenuator
AT-332, AT-337
DC - 2 GHz
V 2.00
AT-332 (TO-5-4)
Features
• Available in Ceramic and TO-5 packages
• 40 dB Matched Attenuation
• Low Insertion Loss
Guaranteed Specifications1
(From -55°C to + 85°C)
Frequency Range
DC – 2.0 GHz
Insertion Loss
DC – 2.0 GHz
DC – 1.0 GHz
1.5 dB Max
1.2 dB Max
VSWR
AT-332
1.4:1
1.25:1
AT-337
1.5:1 Max
1.3:1 Max
DC – 2.0 GHz
DC – 1.0 GHz
Attenuation
(Matched) @ 25°C
DC – 2.0 GHz
40 dB Min
Flatness
(Peak to Peak)
0-20 dB Attenuation
0-30 dB Attenuation
0-40 dB Attenuation
1.0 dB Max
2.0 dB Max
3.0 dB Max
Attenuation vs
Temperature
(Relative to 25°C)
0 to 20 dB Attenuation
0 to 30 dB Attenuation
0 to 40 dB Attenuation
±2.5 dB
±4.0 dB
±6.0 dB
Operating Characteristics
Impedance
50 Ohms Nominal
Switching Characteristics
Trise, Tfall (10% to 90%)
Ton, Toff (50% CTL to 90%/10% RF)
Transients (in band)
14 ns Typ
22 ns Typ
14 mV Typ
AT-337 (CR-2 w/o Pin 1)
Input Power for 1 dB Compression
Attenuation Level
0.05 GHz
0.5 GHz to 2.0 GHz
0 dB
21
27
dBm Typ
Intermodulation Intercept Point (for two-tone input power up to +5 dBm)
Intercept Points
IP2
IP3
Attenuation Level (dB)
0.05 GHz
0.5 to 2 GHz
0
5 10
0 5 10
39 33 30
47 44 38
54 43 39
65 54 49
dBm Typ
dBm Typ
Phase Shift
(Relative to 0 dB Attenuation)
Attenuation Level
0.5 GHz
10 dB 20 dB 30 dB 40 dB
0.1
0.4
3
10
35
19
60
Deg Typ
Deg Typ
2.0 GHz
12
Control Voltages
A input (Shunt FETS)
B input (Series FETS)
0 to -4V @ 100 µA Max
0 to -4V @ 100 µA Max
1. All specifications apply with 50 ohm connected to all RF Ports.
2. Contact the factory for standard or custom sreenig requirements.
Ordering Information
Model No.
Package
AT-354 PIN
Dual Inline
V 2.00
Absolute Maximum Ratings
Functional Schematics (Top View)
Parameter
Absolute Maximum1
Max. Input Power
0.05 GHz
+27 dBm
+30 dBm
0.5 – 2.0 GHz
Control Voltage
+5V, -8.5V
Operating Temperature
Storage Temperature
-55°C to +125°C
-65°C to +150°C
1.Operation of this device above any one of these parameters may cause
permanent damage.
Typical Performance
FREQUENCY (GHz)
FREQUENCY (GHz)
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