APT60M75L2LL_04 [ADPOW]
POWER MOS 7 R MOSFET; 功率MOS 7 R MOSFET![APT60M75L2LL_04](http://pdffile.icpdf.com/pdf1/p00120/img/icpdf/APT60M75L2LL_656761_icpdf.jpg)
型号: | APT60M75L2LL_04 |
厂家: | ![]() |
描述: | POWER MOS 7 R MOSFET |
文件: | 总5页 (文件大小:155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
APT60M75L2LL
600V 73A 0.075Ω
R
POWER MOS 7 MOSFET
TO-264
Max
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D
S
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg
MAXIMUM RATINGS
• Popular TO-264 MAX Package
All Ratings: T = 25°C unless otherwise specified.
C
APT60M75L2LL
UNIT
Symbol
VDSS
ID
Parameter
Volts
Drain-Source Voltage
600
Continuous Drain Current @ TC = 25°C
73
292
Amps
Volts
1
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
VGSM
±40
Watts
W/°C
893
PD
7.14
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
300
73
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
UNIT
Volts
Ohms
MIN
TYP
MAX
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 36.5A)
0.075
100
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
IDSS
µA
500
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT60M75L2LL
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
8930
1130
50
V
= 0V
GS
Output Capacitance
V
= 25V
pF
DS
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
195
48
GS
V
= 300V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
I
= 73A @ 25°C
D
100
23
RESISTIVESWITCHING
V
= 15V
GS
19
V
= 300V
DD
I
= 73A @ 25°C
td(off)
55
Turn-off Delay Time
D
R
= 0.6Ω
G
tf
Fall Time
8
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
1515
1745
2345
1950
V
= 400V, V = 15V
GS
DD
I
= 73A, R = 5Ω
Turn-off Switching Energy
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Turn-on Switching Energy
V
= 400V V = 15V
GS
DD
I
= 73A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
Characteristic / Test Conditions
UNIT
MIN
TYP
MAX
73
IS
Continuous Source Current (Body Diode)
Amps
ISM
1
292
1.3
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
VSD
t rr
(VGS = 0V, IS = -73A)
Volts
ns
Reverse Recovery Time (IS = -73A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -73A, dlS/dt = 100A/µs)
857
26
Q rr
µC
dv
/
dv
5
V/ns
Peak Diode Recovery
/
dt
8
dt
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.14
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting T = +25°C, L = 1.20mH, R = 25Ω, Peak I = 73A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 73A
/
≤ 700A/µs
V
R ≤ 600V T ≤ 150°C
dt
S
D
J
3 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinforationcontainedherein.
0.16
0.14
0.9
0.12
0.7
0.10
0.08
0.5
Note:
t
0.06
1
0.3
t
2
0.04
t
1
Duty Factor D =
/
t
2
Peak T = P
x Z + T
0.02
0
0.1
J
DM
θJC C
0.05
SINGLEPULSE
10-3
10-5
10-4
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT60M75L2LL
200
180
160
140
120
100
80
V
=15 &10V
GS
8V
7.5V
7V
RC MODEL
Junction
temp. (°C)
6.5
0.0484
0.0903
0.0236F
0.400F
Power
(watts)
6V
25
60
40
5.5V
30
20
0
Case temperature. (°C)
0
5
10
15
20
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
180
1.40
NORMALIZED TO
V
> I (ON) x
R
MAX.
DS(ON)
DS
D
V
= 10V
@
I
= 36.5A
160
140
120
100
80
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
GS
D
1.30
1.20
1.10
1.00
T
= -50°C
J
V
=10V
GS
T
J
= +25°C
60
V
=20V
T
= +125°C
GS
J
40
0.90
0.80
20
0
0
1
2
3
4
5
6
7
8
9
0
20
40
60
80
100 120 140
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5, R
vsDRAINCURRENT
DS(ON)
1.15
1.10
1.05
1.00
80
70
60
50
40
30
20
0.95
0.90
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 36.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8, R
vs. TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
DS(ON)
APT60M75L2LL
292
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
100
50
100µS
C
oss
rss
1,000
10
1mS
100
10
C
10mS
T
=+25°C
C
T =+150°C
J
SINGLEPULSE
10
1
16
12
8
1
100
600
0
V
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
200
I
= 73A
D
100
T =+150°C
J
V
=120V
DS
T =+25°C
J
V
=300V
DS
V
=480V
DS
10
4
0
1
0
50
100
150
200
250
300
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
g
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
160
180
V
= 400V
DD
= 5Ω
R
T
160
140
120
100
80
G
140
t
= 125°C
d(off)
J
L = 100µH
120
V
= 400V
DD
= 5Ω
100
80
R
T
t
G
f
= 125°C
J
L = 100µH
t
r
60
60
40
40
t
d(on)
20
0
20
0
10
30
50
70
(A)
90
110
130
10
30
50
70
(A)
90
110
130
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000
4000
3000
2000
8000
7000
6000
5000
4000
3000
2000
1000
0
V
= 400V
V
I
= 400V
DD
= 5Ω
DD
= 73A
R
T
G
D
= 125°C
T
= 125°C
E
off
J
J
L = 100µH
L = 100µH
EON includes
EON includes
diode reverse recovery
diode reverse recovery
E
off
E
E
on
on
1000
0
10
30
50
70
(A)
90
110
130
0
5
10 15 20 25 30 35 40 45 50
I
D
R ,GATERESISTANCE(Ohms)
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT60M75L2LL
90%
GateVoltage
DrainCurrent
10%
T 125°C
T 125°C
J
J
GateVoltage
DrainVoltage
td(off)
td(on)
90%
tf
90%
tr
10%
10%
5%
5%
0
DrainVoltage
DrainCurrent
SwitchingEnergy
SwitchingEnergy
Figure18,Turn-onSwitchingWaveformsandDefinitions
Figure19,Turn-offSwitchingWaveformsandDefinitions
APT60DF60
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264MAXTM(L2)PackageOutline
4.60 (.181)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
相关型号:
![](http://pdffile.icpdf.com/pdf1/p00075/img/page/APT60M75_397009_files/APT60M75_397009_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00075/img/page/APT60M75_397009_files/APT60M75_397009_2.jpg)
APT60M75PVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
![](http://pdffile.icpdf.com/pdf2/p00229/img/page/APT60M80L2VF_1342304_files/APT60M80L2VF_1342304_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00229/img/page/APT60M80L2VF_1342304_files/APT60M80L2VF_1342304_2.jpg)
APT60M80L2VFR
Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN
MICROSEMI
![](http://pdffile.icpdf.com/pdf2/p00229/img/page/APT60M80L2VF_1342304_files/APT60M80L2VF_1342304_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00229/img/page/APT60M80L2VF_1342304_files/APT60M80L2VF_1342304_2.jpg)
APT60M80L2VFRG
Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN
MICROSEMI
![](http://pdffile.icpdf.com/pdf1/p00075/img/page/APT60M80L2_397010_files/APT60M80L2_397010_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00075/img/page/APT60M80L2_397010_files/APT60M80L2_397010_2.jpg)
APT60M80L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
![](http://pdffile.icpdf.com/pdf2/p00229/img/page/APT60M80L2VR_1343631_files/APT60M80L2VR_1343631_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00229/img/page/APT60M80L2VR_1343631_files/APT60M80L2VR_1343631_2.jpg)
APT60M80L2VRG
Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明