APT60M90JN [ADPOW]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
| 型号： | APT60M90JN |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S
D
S
S
D
G
G
SOT-227
APT60M90JN 600V 57A 0.090Ω
ISOTOP®
"UL Recognized" File No. E145592 (S)
POWER MOS IV®
SINGLE DIE ISOTOP® PACKAGE
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
APT
Symbol Parameter
60M90JN
UNIT
VDSS
600
Volts
Drain-Source Voltage
ID
57
Continuous Drain Current @ TC = 25°C
Amps
1
IDM, lLM
VGS
228
Pulsed Drain Current
and Inductive Current Clamped
Gate-Source Voltage
±30
Volts
Watts
W/°C
690
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
PD
5.52
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
°C
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Symbol
MIN
TYP
MAX
UNIT
APT60M90JN
APT60M90JN
APT60M90JN
600
Drain-Source Breakdown Voltage
BVDSS
Volts
(VGS = 0V, ID = 250 µA)
2
On State Drain Current
57
ID(ON)
Amps
Ohms
µA
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
2
0.090
Drain-Source On-State Resistance
RDS(ON)
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
1000
±100
4
IDSS
IGSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
nA
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 5.0mA)
THERMAL CHARACTERISTICS
2
Volts
Symbol Characteristic
MIN
TYP
MAX
UNIT
RΘJC
RΘCS
Junction to Case
0.18
°C/W
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
0.05
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
APT60M90JN
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
GS = 0V
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
11670 14000
V
Output Capacitance
VDS = 25V
f = 1 MHz
1810
545
446
64
2530
870
670
95
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = ID [Cont.] @ 25°C
208
22
315
45
td(on)
tr
VGS = 15V
VDD = 0.5 VDSS
24
50
ID = ID [Cont.] @ 25°C
td(off)
tf
65
95
Turn-off Delay Time
Fall Time
RG = 0.6Ω
12
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
APT60M90JN
APT60M90JN
57
Continuous Source Current
IS
(Body Diode)
Amps
1
228
Pulsed Source Current
ISM
(Body Diode)
2
VSD
t rr
Diode Forward Voltage
(VGS = 0V, IS = -ID [Cont.])
Volts
ns
1.8
1600
50
Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
800
26
Q rr
µC
PACKAGE CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
LD
Internal Drain Inductance (Measured From Drain Terminal to Center of Die.)
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
3
5
nH
LS
VIsolation
CIsolation
2500
Volts
pF
70
Torque Maximum Torque for Device Mounting Screws and Electrical Terminations.
13
lb•in
1
2
3
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
0.2
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
Note:
0.02
0.01
0.005
t
1
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
SINGLE PULSE
0.001
0.0005
J
DM
θJC
C
-5
-4
-3
-2
-1
10
10
10
10
10
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT60M90JN
150
125
100
75
150
125
100
75
V
=8, 10 & 15V
GS
V
=15V
GS
10V
8V
6V
6V
5.5V
5.5V
4.5V
50
50
5V
4V
5V
4V
25
25
4.5V
0
0
0
V
60
120
180
240
300
0
V
4
8
12
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
16
20
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
3.0
2.5
2.0
1.5
1.0
0.5
100
80
60
40
20
0
T
= 25°C
T
= +25°C
J
T
= -55°C
J
J
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
T
= +125°C
V
> I (ON) x
R
(ON)MAX.
J
DS
D
DS
250µSEC. PULSE TEST
V
= 10V
@
0.5
I
[Cont.]
D
@ <0.5 % DUTY CYCLE
GS
V
=10V
GS
V
=20V
GS
T
= +125°C
J
T
= -55°C
J
T
= +25°C
J
0
V
2
4
6
8
10
0
50
100
150
200
250
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
1.2
1.1
1.0
60
50
40
30
20
10
0
0.9
0.8
0.7
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.4
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.2
1.0
0.8
0.6
0.4
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT60M90JN
500
50,000
10µS
OPERATION HERE
LIMITED BY R (ON)
C
100
50
DS
iss
100µS
10,000
5,000
1mS
C
C
oss
10
5
10mS
rss
1,000
500
100mS
DC
1
T
T
=+25°C
=+150°C
C
J
.5
SINGLE PULSE
.1
100
1
V
5
10
50 100
600
.1
V
.5
1
5
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
400
20
I
=
I
[Cont.]
D
D
V
=120V
DS
=300V
T
=+150°C
J
16
12
8
100
50
V
DS
V
=480V
T
=+25°C
DS
J
T
=-55°C
J
10
5
4
0
1
0
200
g
400
600
800
1000
0
V
0.4
0.8
1.2
1.6
2.0
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP® is a Registered Trademark of SGS Thomson.
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