APT60N60BCS [ADPOW]
Super Junction MOSFET; 超级结MOSFET
| 型号： | APT60N60BCS |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Super Junction MOSFET |
| 文件： | 总5页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
600V 60A 0.045Ω
APT60N60BCS
APT60N60SCS
APT60N60BCSG* APT60N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Super Junction MOSFET
(B)
COOLMOS
Power Semiconductors
D3PAK
• Ultra Low RDS(ON)
(S)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q
• Avalanche Energy Rated
g
D
dv
• Extreme
/
Rated
dt
G
• Popular TO-247 or Surface Mount D3 Package
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT60N60B_SCS(G)
UNIT
VDSS
Volts
Drain-Source Voltage
600
60
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 100°C
Amps
38
1
IDM
Pulsed Drain Current
230
VGS
Volts
Watts
W/°C
Gate-Source Voltage Continuous
±30
431
Total Power Dissipation @ TC = 25°C
PD
Linear Derating Factor
3.45
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
MOSFET dv/dt Ruggedness (VDS = 480V)
-55 to 150
260
°C
dv
/
V/ns
50
11
dt
2
IAR
EAR
EAS
Avalanche Current
Amps
2
Repetitive Avalanche Energy
3
mJ
3
1950
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
V(BR)DSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
600
4
Drain-Source On-State Resistance
(VGS = 10V, ID = 44A)
0.045 Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 3mA)
25
µA
250
IDSS
IGSS
nA
±100
3.9
VGS(th)
2.1
3
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
APT60N60B_SCS(G)
DYNAMIC CHARACTERISTICS
Symbol
Ciss
MIN
TYP
MAX
Characteristic
UNIT
Test Conditions
Input Capacitance
V
= 0V
7200
8500
290
150
34
GS
Coss
Crss
V
= 25V
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
Qg
5
190
V
= 10V
Total Gate Charge
GS
Qgs
Qgd
td(on)
tr
V
= 400V
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 44A @ 25°C
D
50
RESISTIVE SWITCHING
30
V
= 15V
GS
20
V
= 400V
DD
td(off)
100
10
Turn-off Delay Time
Fall Time
I
= 44A @ 25°C
D
tf
R
= 3.3Ω
G
INDUCTIVE SWITCHING @ 25°C
Eon
Eoff
6
675
520
Turn-on Switching Energy
V
= 400V, V = 15V
DD
GS
I
= 44A, R = 4.3Ω
Turn-off Switching Energy
D
G
µJ
INDUCTIVE SWITCHING @ 125°C
6
Eon
Eoff
1100
635
Turn-on Switching Energy
V
= 400V, V = 15V
DD
GS
I
= 44A, R = 4.3Ω
Turn-off Switching Energy
D
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
UNIT
MIN
TYP
MAX
IS
Continuous Source Current (Body Diode)
44
180
1.2
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
4
(VGS = 0V, IS = -44A)
Volts
ns
Reverse Recovery Time (IS = -44A, dlS/dt = 100A/µs)
600
17
Q rr
Reverse Recovery Charge (IS = -44A, dlS/dt = 100A/µs)
µC
dv
Peak Diode Recovery dv
/
4
7
/
V/ns
dt
dt
THERMAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
0.29
62
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
7 We do not recommend using this CoolMOS™ product in topologies
that have fee wheeling load current conducted in the body diode that is
hard commutated. The current commutation is very "snappy", resulting in
high di/dt at the completion of commutation, and the likelihood of severe
over-voltage transients due to the resulting high dv/dt.
2 Repetitive avalanche causes additional power losses that can
be calculated as PAV = E *f
AR
3 Starting T = +25°C, L = 33.23mH, R = 25Ω, Peak I = 11A
j
G
L
4 Pulse Test: Pulse width < 380µs, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
D = 0.9
0.25
0.7
0.20
0.5
0.3
0.15
0.10
Note:
t
1
t
2
0.05
0
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
0.1
SINGLE PULSE
10-3
+ T
C
J
DM
θJC
0.05
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
APT60N60B_SCS(G)
140
120
100
80
15, 10 & 7V
RC MODEL
6.5V
6V
Junction
temp. (°C)
0.143
0.00717
0.120
Power
(watts)
0.233
5.5V
60
40
5V
4.5V
0.00391
0.680
20
Case temperature. (°C)
0
0
5
10
15
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
200
1.40
NORMALIZED TO
VDS> ID(ON)
x RDS(ON) MAX.
180
160
140
120
100
80
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
= 10V
@
44A
GS
1.30
1.20
1.10
1.00
VGS=10V
TJ = -55°C
TJ = +25°C
TJ = +125°C
60
VGS=20V
40
0.90
0.80
20
0
0
V
1
2
3
4
5
6
7
8
0
20
40
60
80
100 120 140
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
60
50
40
30
20
10
0
1.15
1.10
1.05
1.00
0.95
0.90
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.15
I
= 44A
= 10V
D
V
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
GS
2.0
1.5
1.0
0.5
0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT60N60B_SCS(G)
105
104
103
102
230
OPERATION HERE
LIMITED BY R (ON)
DS
100
50
Ciss
Coss
100µS
10
5
101
100
Crss
TC =+25°C
1mS
T =+150°C
SJINGLE PULSE
10mS
1
1
V
10
100
600
0
V
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
100
150
200
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
16
14
12
10
8
I
= 44A
D
100
TJ =+150°C
V
DS=120V
TJ =+25°C
V
DS=300V
10
6
VDS=480V
4
2
0
1
0
50
100
150
200
250
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
g
SD
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
250
110
V
= 400V
DD
100
90
80
70
60
50
40
30
20
R
T
= 4.3Ω
G
= 125°C
200
J
L = 100µH
td(off)
tf
150
V
= 400V
DD
R
T
= 4.3Ω
G
= 125°C
J
L = 100µH
100
50
0
tr
td(on)
10
0
0
20
40
(A)
60
80
0
20
40
(A)
60
80
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
2000
1500
1000
V
= 400V
DD
R
T
= 4.3Ω
G
= 125°C
J
2000
L = 100µH
includes
Eoff
E
on
diode reverse recovery.
Eon
1500
Eon
1000
V
I
= 400V
DD
= 44A
Eoff
D
500
0
T
= 125°C
500
0
J
L = 100µH
includes
E
on
diode reverse recovery.
0
20
40
(A)
60
80
0
5
10 15 20 25 30 35 40 45 50
R , GATE RESISTANCE (Ohms)
I
D
G
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT60N60B_SCS(G)
90%
10%
Gate Voltage
Gate Voltage
Drain Current
T 125°C
J
T 125°C
J
td(on)
td(off)
tf
tr
Drain Voltage
90%
90%
5%
10%
0
Drain Voltage
10%
Drain Current
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60DQ60
V
V
I
DS
DD
D
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
D3PAK Package Outline
e1 SAC: Tin, Silver, Copper
e3
100% Sn
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
5.31 (.209)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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