APT20M21DN [ADPOW]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;![APT20M21DN](http://pdffile.icpdf.com/pdf2/p00286/img/icpdf/APT9021DN_1719040_icpdf.jpg)
型号: | APT20M21DN |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
文件: | 总4页 (文件大小:380K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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APT20M22
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT20M22B2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT20M22B2VFRG
Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-247, TMAX-3
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APT20M22B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT20M22B2VRG
Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3
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APT20M22JVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT20M22JVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
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