APT20M22B2VFRG [MICROSEMI]
Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-247, TMAX-3;
| 型号： | APT20M22B2VFRG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-247, TMAX-3 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT20M22B2VFR
200V 100A 0.022Ω
POWER MOS V®
FREDFET
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
• Lower Leakage
• 100% Avalanche Tested
D
S
FREDFET
• New T-MAX™ Package
(Clip-mounted TO-247 Package)
G
• Faster Switching
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT20M22B2VFR
UNIT
VDSS
ID
Drain-Source Voltage
200
100
Volts
5
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
5
IDM
Pulsed Drain Current
400
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
520
PD
4.16
-55 to 150
300
W/°C
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
°C
Amps
mJ
1
5
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
100
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
200
100
2
5
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
0.022
250
1000
±100
4
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT20M22B2VFR
Test Conditions
MIN
MIN
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
8500 10200
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
1950
560
290
66
2730
840
435
100
180
32
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
VDD = 0.5 VDSS
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
ID = ID [Cont.] @ 25°C
120
16
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
25
50
td(off)
tf
Turn-off Delay Time
Fall Time
48
72
5
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
TYP
MAX
100
400
1.5
5
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
ISM
VSD
Pulsed Source Current (Body Diode)
2
Diode Forward Voltage
Peak Diode Recovery dv
Reverse Recovery Time
(VGS = 0V, IS = -ID [Cont.])
Volts
V/ns
6
dv
/
/
dt
dt
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
220
420
ns
µC
trr
(IS = -ID [Cont.], di
Reverse Recovery Charge
(IS = -ID [Cont.], di
dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di
dt = 100A/µs)
/dt = 100A/µs)
0.8
3.0
10
Qrr
/
IRRM
Amps
/
18
THERMAL CHARACTERISTICS
Symbol Characteristic
TYP
MAX
0.24
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1
4
5
6
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Starting T = +25°C, L = 500µH, R = 25Ω, Peak I = 100A
j G L
These dimensions are equal to the TO-247 without mounting hole
di
2
3
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
I
S
≤ -I [Cont.],
/
= 100A/µs, V ≤ V
, T ≤ 150°C, R = 2.0Ω,
DSS j G
D
DD
dt
V
R
= 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.01
0.02
t
1
0.005
0.01
t
2
SINGLE PULSE
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM
θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT20M22B2VFR
200
160
120
80
200
160
120
80
10V
V
=7V, 8V, 10V & 15V
V
=15V
GS
GS
8V
7V
6.5V
6.5V
6V
6V
5.5V
5V
5.5V
5V
40
40
4.5V
4V
4.5V
4V
0
0
0
V
20
40
60
80
100
0
V
1
2
3
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
4
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
200
160
120
80
1.4
NORMALIZED TO
T
= -55°C
J
V
= 10V
@
0.5
I
[Cont.]
D
GS
T
= +25°C
J
1.3
1.2
1.1
1.0
0.9
0.8
T
= +125°C
J
V
> I (ON) x
R
(ON)MAX.
DS
D
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
=10V
GS
V
=20V
250
GS
T
T
= +125°C
= +25°C
J
J
40
T
= -55°C
J
0
0
V
2
4
6
8
0
50
100
150
200
300
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
100
1.15
80
60
40
20
0
1.10
1.05
1.00
0.95
0.90
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT20M22B2VFR
500
30,000
10µS
OPERATION HERE
LIMITED BY R (ON)
DS
100µS
C
C
iss
10,000
5,000
100
50
oss
1mS
C
rss
10mS
1,000
500
10
5
T
T
=+25°C
=+150°C
C
J
100mS
DC
SINGLE PULSE
1
100
1
V
5
10
50 100 200
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
400
I
= I [Cont.]
D
D
V
=40V
DS
=100V
T
=+150°C
T
=+25°C
J
J
100
50
V
DS
V
=160V
DS
10
5
4
1
0
0
100
g
200
300
400
500
0
V
0.4
0.8
1.2
1.6
2.0
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
5
T-MAX™ Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Gate
1.01 (.040)
1.40 (.055)
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
相关型号：
APT20M22B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT20M22B2VRG
Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3
MICROSEMI
APT20M22JVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT20M22JVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT20M22LVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT20M22LVFRG
Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
MICROSEMI
APT20M22LVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT20M22LVRG
Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明