APT20M21JN [ETC]
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 120A I(D) ; 晶体管| MOSFET功率模块|独立| 200V V( BR ) DSS | 120A I( D)\n![APT20M21JN](http://pdffile.icpdf.com/pdf1/p00006/img/icpdf/APT20_27360_icpdf.jpg)
型号: | APT20M21JN |
厂家: | ![]() |
描述: | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 120A I(D)
|
文件: | 总4页 (文件大小:197K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Powered by ICminer.com Electronic-Library Service CopyRight 2003
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相关型号:
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APT20M22
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
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APT20M22B2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
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APT20M22B2VFRG
Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-247, TMAX-3
MICROSEMI
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APT20M22B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
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APT20M22B2VRG
Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3
MICROSEMI
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APT20M22JVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
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APT20M22JVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
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APT20M22LVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
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