APT10040LLC [ADPOW]
Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN;
| 型号： | APT10040LLC |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN 高压 |
| 文件： | 总4页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT10040B2VFR
APT10040LVFR
1000V 25A 0.400W
B2VFR
POWER MOS V®
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVFR
• Identical Specifications: T-MAX™ or TO-264 Package
D
• Lower Leakage
• Faster Switching
G
• Fast Recovery Body Diode
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT10040
1000
25
UNIT
VDSS
ID
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
100
Pulsed Drain Current
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
625
Watts
W/°C
PD
5.0
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
33
Avalanche Current
(Repetitive and Non-Repetitive)
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
1000
25
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.40
250
1000
±100
4
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT10040 B2VFR - LVFR
Test Conditions
GS = 0V
MIN
MIN
MIN
TYP
7830
715
386
415
37
MAX
9400
1010
580
630
45
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
V
Output Capacitance
pF
VDS = 25V
f = 1 MHz
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
VDD = 0.5 VDSS
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
ID = ID [Cont.] @ 25°C
GS = 15V
216
13
330
26
V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
13
26
td(off)
tf
Turn-off Delay Time
Fall Time
57
86
9
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
TYP
MAX
25
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
ISM
VSD
Pulsed Source Current (Body Diode)
100
1.3
18
2
Diode Forward Voltage
Peak Diode Recovery dv
Reverse Recovery Time
(VGS = 0V, IS = -ID [Cont.])
Volts
V/ns
5
dv
/
/
dt
dt
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
320
650
ns
µC
trr
(IS = -ID [Cont.], di
Reverse Recovery Charge
(IS = -ID [Cont.], di
dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di
dt = 100A/µs)
/dt = 100A/µs)
3.1
8.7
Qrr
/
15.8
24.8
IRRM
Amps
/
THERMAL CHARACTERISTICS
Symbol Characteristic
TYP
MAX
0.20
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 9.60mH, R = 25Ω, Peak I = 25A
j
G
L
di
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
I
S
≤ -I [Cont.],
/
= 700A/µs, T ≤ 150°C, R = 2.0Ω, V = 200V.
D
j
G
R
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2
0.1
D=0.5
0.05
0.2
0.1
0.05
Note:
0.01
t
1
0.02
0.01
0.005
t
2
SINGLE PULSE
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Preformance Curves
60
50
40
30
20
V
=7, 10 &15V
5.5V
GS
6V
Graph Deleted
5V
10
0
4.5V
4V
20
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
0
V
5
10
15
25
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
80
NORMALIZED TO
V
> I (ON) x
DS
R
(ON)MAX.
DS
D
V
= 10V
@
0.5
I
[Cont.]
250µSEC. PULSE TEST
GS
D
70
60
50
40
30
20
@ <0.5 % DUTY CYCLE
1.15
1.1
V
=10V
GS
1.05
1.0
V
=20V
GS
T
= +25°C
J
T
= -55°C
J
0.95
0.90
T
= +125°C
10
0
J
0
1
2
3
4
5
6
7
8
0
5
10 15 20 25
30 35 40
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
25
1.15
1.10
1.05
1.00
20
15
10
5
0.95
0.90
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
3.0
1.2
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
2.5
2.0
1.5
1.0
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT10040 B2VFR - LVFR
40,000
100
50
OPERATION HERE
LIMITED BY R (ON)
DS
100µS
C
iss
10,000
5,000
1mS
10
5
1,000
500
C
oss
10mS
T
T
=+25°C
=+150°C
C
rss
C
J
SINGLE PULSE
1
100
1
5
10
50 100
500 1000
.01
V
.1
1
10
50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
12
10
8
100
I
= I [Cont.]
D
D
50
V
=100V
DS
T
=+150°C
J
V
=250V
DS
T
=+25°C
J
V
=400V
DS
6
10
5
4
2
0
1
0
100
200
300
400
500
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
g
SD
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Gate
1.01 (.040)
1.40 (.055)
Drain
Source
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522 5,262,336
5,434,095 5,528,058
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