APT10045B2FLLG [MICROSEMI]

Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3;


型号：	APT10045B2FLLG
厂家：	Microsemi
描述：	Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 开关脉冲晶体管
文件：	总5页 (文件大小：284K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

APT10045B2FLL(G)

APT10045LFLL(G)

1000V 23A 0.46Ω

B2FLL

POWER MOS 7 FREDFET

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

T-MAX™

TO-264

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7 by significantly lowering R

and Q_g. Power MOS 7^®combines lower conduction and switching lo^Ds^Ss^(Oe^Ns⁾

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

LFLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• Increased Power Dissipation

• Easier To Drive

• Popular T-MAX™ or TO-264 Package

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT10045

1000

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

565

Watts

W/°C

P_D

4.52

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1000

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 11.5A)

Ohms

µA

0.46

250

1000

±100

Zero Gate Voltage Drain Current (V_DS= 1000V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 800V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

I_DSS

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

APT10045B2FLL - LFLL

DYNAMIC CHARACTERISTICS

Symbol

MIN

TYP

MAX

Characteristic

UNIT

Test Conditions

C_iss

= 0V

Input Capacitance

4350

715

120

154

= 25V

C_oss

C_rss

Q_g

Output Capacitance

f = 1 MHz

Reverse Transfer Capacitance

= 10V

Total Gate Charge

= 500V

Q_gs

Q_gd

t_d(on)

t_r

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

= 23A @ 25°C

RESISTIVE SWITCHING

= 15V

= 500V

t_d(off)

Turn-off Delay Time

Fall Time

= 23A @ 25°C

t_f

= 0.6Ω

INDUCTIVE SWITCHING @ 25°C

E_on

E_off

639

380

Turn-on Switching Energy

= 670V, V = 15V

Turn-off Switching Energy

= 23A, R = 5Ω

µJ

INDUCTIVE SWITCHING @ 125°C

E_on

E_off

Turn-on Switching Energy

1046

451

= 670V V = 15V

Turn-off Switching Energy

= 23A, R = 5Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

I_S

Continuous Source Current (Body Diode)

Amps

I_SM

Pulsed Source Current

Diode Forward Voltage

(Body Diode)

V_SD

Volts

V/ns

(V_GS= 0V, I_S= -23A)

1.3

Peak Diode Recovery

Reverse Recovery Time

(I_S= -23A, ^di/_dt= 100A/µs)

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

340

640

t_rr

µC

Reverse Recovery Charge

(I_S= -23A, ^di/_dt= 100A/µs)

1.78

4.47

11.4

16.4

Q_rr

Peak Recovery Current

(I_S= -23A, ^di/_dt= 100A/µs)

I_RRM

Amps

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN

TYP

MAX

0.22

UNIT

Junction to Case

R_θJC

R_θJA

°C/W

Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

4 Starting T = +25°C, L = 9.45mH, R = 25Ω, Peak I = 23A

numbers reflect the limitations of the test circuit rather than the

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

device itself.

≤ -I 23A

≤ 700A/µs

_R≤ V

T ≤ 150°C

DSS

Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.25

0.9

0.20

0.7

0.15

0.5

Note:

0.10

0.3

0.05

Duty Factor D =

0.1

Peak T = P

x Z + T

θJC C

SINGLE PULSE

0.05

10^-5

10^-4

10^-3

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

10^-2

10^-1

1.0

Typical Performance Curves

APT10045B2FLL - LFLL

RC MODEL

Junction

temp. ( ”C)

=15 & 8V

0.0893

0.0102F

0.106F

0.979F

6.5V

Power

0.0842

(Watts)

5.5V

0.0485

Case temperature

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TRANSIENT THERMAL IMPEDANCMEODEL

FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS

1.40

NORMALIZED TO

> I (ON) x

(ON)MAX.

= 10V

11.5A

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

1.30

1.20

1.10

1.00

=10V

=20V

= +125°C

= +25°C

= -55°C

0.90

0.80

, GATE-TO-SOURCE VOLTAGE (VOLTS)

I , DRAIN CURRENT (AMPERES)

FIGURE 4, TRANSFER CHARACTERISTICS

FIGURE 5, R (ON) vs DRAIN CURRENT

1.15

1.10

1.05

1.00

0.95

0.90

0.85

100

125

150

-50 -25

50 75 100 125 150

T , CASE TEMPERATURE (°C)

T , JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASTEEMPERATURE

FIGURE 7,BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

1.2

= 11.5A

= 10V

1.1

1.0

0.9

0.8

2.0

1.5

1.0

0.5

0.0

0.7

0.6

-50 -25

25 50

75 100 125 150

-50 -25

75 100 125 150

T , JUNCTION TEMPERATURE (°C)

T , CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

FIGURE9, THRESHOLD VOLTAGE vs TEMPERATURE

PT10045B2FLL - LFLL

Typical Performance Curves

20,000

10,000

OPERATION HERE

LIMITED BY R (ON)

iss

1,000

100µS

oss

rss

100

=+25°C

=+150°C

1mS

10mS

SINGLE PULSE

100

1000

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

200

= 23A

100

=200V

=+150°C

=+25°C

=500V

=800V

0.3

100

150

200

250

0.5

0.7

0.9

1.1

1.3

1.5

Q , TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE

160

= 670V

= 5Ω

140

120

100

d(off)

= 125°C

L = 100µ H

= 670V

= 5Ω

= 125°C

L = 100µ H

d(on)

(A)

FIGURE 14, DELAY TIMES vs CURRENT

FIGURE 15,RISE AND FALL TIMES vs CURRENT

2000

1500

4000

= 670V

= 5Ω

3500

3000

2500

= 125° C

off

L = 100 µH

E_ONincludes

diode reverse recovery.

1000

500

2000

1500

1000

500

= 670V

= 23A

= 125°C

L = 100µ H

E_ONincludes

off

diode reverse recovery.

15 20

(A)

35 40

10 15 20 25 30 35 40 45 50

R , GATE RESISTANCE (Ohms)

FIGURE 16, SWITCHING ENERGY vs CURRENT

FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

APT10045B2FLL - LFLL

Gate Voltage

10 %

90%

Gate Voltage

= 125 C

d(on)

d(off)

Drain Voltage

Drain Current

Drain Voltage

90%

5 %

90%

10%

10 %

Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

Figure 18, Turn-on Switching Waveforms and Definitions

APT15DF120B

V_CE

I_C

V_DD

D.U.T.

Figure 20, Inductive Switching Test Circuit

T-MAX^TM(B2) Package Outline

TO-264(L)PackageOutline

4.69 (.185)˜

5.31 (.209)

4.60 (.181)˜

15.49 (.610)˜

16.26 (.640)

5.21 (.205)

19.51 (.768)˜

20.50 (.807)

1.49 (.059)˜

2.49 (.098)

1.80 (.071)˜

2.01 (.079)

3.10 (.122)˜

3.48 (.137)

5.38 (.212)˜

6.20 (.244)

5.79 (.228)˜

6.20 (.244)

20.80 (.819)˜

21.46 (.845)

25.48 (1.003)˜

26.49 (1.043)

2.87 (.113)˜

3.12 (.123)

4.50 (.177) Max.

2.29 (.090)˜

2.69 (.106)

2.29 (.090)˜

2.69 (.106)

1.65 (.065)˜

2.13 (.084)

0.40 (.016)˜

0.79 (.031)

19.81 (.780)˜

20.32 (.800)

19.81 (.780)˜

21.39 (.842)

Gate

1.01 (.040)˜

1.40 (.055)

Drain

Source

Drain

Source

0.48 (.019)˜

0.76 (.030)˜

1.30 (.051)

2.79 (.110)˜

3.18 (.125)

0.84 (.033)

2.59 (.102)˜

3.00 (.118)

2.21 (.087)˜

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

5.45 (.215) BSC

2-Plcs.

These dimensions are equal to the TO-247 without the mounting hole.

Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

APT10045B2FLLG [MICROSEMI]

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