APT10040LVR [ADPOW]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs; 功率MOS V是新一代高压N沟道增强型功率MOSFET
| 型号： | APT10040LVR |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT10040B2VR
APT10040LVR
1000V 25A 0.400W
B2VR
POWER MOS V®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVR
• Identical Specifications: T-MAX™ or TO-264 Package
D
S
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT10040
1000
25
UNIT
VDSS
ID
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
100
Pulsed Drain Current
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
625
Watts
W/°C
PD
5.0
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
33
Avalanche Current
(Repetitive and Non-Repetitive)
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
1000
25
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.400
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
250
±100
4
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT10040 B2VR - LVR
Test Conditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
7700
690
330
380
33
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
td(on)
tr
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = 0.5 ID[Cont.] @ 25°C
196
18
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6W
14
td(off)
tf
Turn-off Delay Time
Fall Time
66
9
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
25
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
100
1.3
2
(VGS = 0V, IS = -ID[Cont.]
)
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
1060
25.5
Q rr
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.20
40
UNIT
RqJC
RqJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 9.60mH, R = 25W, Peak I = 25A
j
G
L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX™ (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
4.60 (.181)
5.21 (.205)
5.31 (.209)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
4.50
(.177) Max.
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
0.40 (.016)
0.79 (.031)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
Gate
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Collector
Emitter
Collector
Emitter
1.01 (.040)
1.40 (.055)
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.21 (.087)
2.59 (.102)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.00 (.118)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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