ADG849YKSZ-REEL [ADI]
3 V/5 V CMOS 0.5 ohm SPDT/2:1 Mux in SC70; 3 V / 5 V CMOS 0.5欧姆SPDT / 2 ： 1多路复用器，SC70封装
| 型号： | ADG849YKSZ-REEL |
| 厂家： | 
ADI |
| 描述： | 3 V/5 V CMOS 0.5 ohm SPDT/2:1 Mux in SC70 |
| 文件： | 总12页 (文件大小：348K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3 V/5 V CMOS
0.5 Ω SPDT/2:1 Mux in SC70
ADG849
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Ultralow on-resistance:
0.5 Ω typical
ADG849
S2
0.8 Ω maximum at 5 V supply
Excellent audio performance, ultralow distortion:
0.13 Ω typical
0.24 Ω maximum RON flatness
High current carrying capability:
400 mA continuous current
600 mA peak current at 5 V
D
S1
IN
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
Figure 1.
Automotive temperature range: –40°C to +125°C
Rail-to-rail operation
Typical power consumption (<0.01 µW)
Pin-compatible upgrade for the ADG749 and ADG779
APPLICATIONS
Cellular phones
PDAs
Battery-powered systems
Audio and video signal routing
Modems
PCMCIA cards
Hard drives
Relay replacement
PRODUCT HIGHLIGHTS
1. Very low on-resistance, 0.5 Ω typical.
2. Tiny, 6-lead SC70 package.
3. Low power dissipation. The CMOS construction ensures
low power dissipation.
4. High current carrying capability.
GENERAL DESCRIPTION
The ADG849 is a monolithic, CMOS SPDT (single pole, double
throw) switch that operates with a supply range of 1.8 V to 5.5 V.
It is designed to offer ultralow on-resistance values of typically
0.5 Ω. This design makes the ADG849 an ideal solution for
applications that require minimal distortion through the switch.
The ADG849 also has the capability of carrying large amounts
of current, typically 600 mA at 5 V operation.
5. Low THD + noise (0.01% typ).
Each switch of the ADG849 conducts equally well in both
directions when on. The device exhibits break-before-make
switching action, thus preventing momentary shorting when
switching channels.
The ADG849 is available in a tiny, 6-lead SC70 package, making
it the ideal candidate for space-constrained applications.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.326.8703
www.analog.com
© 2004 Analog Devices, Inc. All rights reserved.
ADG849
TABLE OF CONTENTS
Specifications..................................................................................... 3
Typical Performance Characteristics ..............................................7
Test Circuits ........................................................................................9
Outline Dimensions....................................................................... 11
Ordering Guide .......................................................................... 11
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions............................. 6
REVISION HISTORY
7/04—Revision 0: Initial Version
Rev. 0| Page 2 of 12
ADG849
SPECIFICATIONS
Table 1. VDD = 4.5 V to 5.5 V, GND = 0 V1
–40°C to –40°C to
Parameter
+25°C +85°C
+125°C
0 V to VDD
0.8
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
On-Resistance (RON
V
)
0.5
0.6
Ω typ
Ω max
VS = 0 V to VDD, IDS = –100 mA
See Figure 15
0.7
On-Resistance Match Between Channels
(∆RON
0.05
Ω typ
VS = 0.85 V, IDS = –100 mA
)
0.095
0.13
0.18
0.11
0.22
0.125
0.24
Ω max
Ω typ
Ω max
On-Resistance Flatness (RFLAT(ON)
)
VS = 0 V to VDD, IDS = –100 mA
LEAKAGE CURRENTS
VDD = 5.5 V
Source Off Leakage, IS (Off)
0.01
0.04
nA typ
nA typ
VS = 4.5 V/1 V, VD = 1 V/4.5 V,
see Figure 16
VS = VD = 1 V, or VS = VD = 4.5 V,
see Figure 17
Channel On Leakage, ID, IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
2.0
0.8
V min
V max
IINL or IINH
0.005
2.5
µA typ
µA max
pF typ
VIN = VINL or VINH
0.1
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tON
11
15
9
13
5
ns typ
ns max
ns typ
ns max
ns typ
RL = 50 Ω, CL = 35 pF
VS = 3 V, see Figure 18
RL = 50 Ω, CL = 35 pF
VS = 3 V, see Figure 18
RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 3 V,
see Figure 19
17
14
18
15
tOFF
Break-Before-Make Time Delay, tBBM
1
ns min
pC typ
dB typ
Charge Injection
Off Isolation
50
–64
VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 20
RL = 50 Ω, CL = 5 pF, f = 100 kHz
see Figure 21
Channel-to-Channel Crosstalk
–64
dB typ
RL = 50 Ω, CL = 5 pF, f = 100 kHz,
see Figure 22
Bandwidth: –3 dB
Insertion Loss
THD + N
38
0.04
0.01
MHz typ
dB typ
%
RL = 50 Ω, CL = 5 pF, see Figure 23
RL = 50 Ω, CL = 5 pF, see Figure 23
RL = 32 Ω, f = 20 Hz to 20 kHz,
Vs = 2 V p-p
CS (Off)
CD, CS (On)
52
145
pF typ
pF typ
POWER REQUIREMENTS
IDD
VDD = 5.5 V, Digital Inputs = 0 V or 5.5 V
0.001
µA typ
1.0
µA max
1The temperature range for the Y version is –40°C to +125°C.
2 Guaranteed by design, not subject to production test.
Rev. 0| Page 3 of 12
ADG849
Table 2. VDD = 2.7 V to 3.6 V, GND = 0 V1
–40°C to –40°C to
Parameter
+25°C +85°C
+125°C
0 V to VDD
1.2
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
On-Resistance (RON
V
)
0.72
1.1
Ω typ
Ω max
VS = 0 V to VDD, IDS = –100 mA
See Figure 15
1.1
On-Resistance Match Between Channels
(∆RON
0.05
Ω typ
VS = 1.5 V, IDS = –100 mA
)
0.095
0.3
0.11
0.125
Ω max
Ω typ
On-Resistance Flatness (RFLAT(ON)
)
VS = 0 V to VDD, IDS = –100 mA
VDD = 3.6 V
LEAKAGE CURRENTS
Source Off Leakage, IS (Off)
Channel On Leakage, ID, IS (On)
0.1
0.01
nA typ
nA typ
VS = 3 V/1 V, VD = 1 V/3 V, see Figure 16
VS = VD = 1 V, or VS = VD = 3 V;
see Figure 17
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
2.0
0.8
0.7
V min
V max
V max
VDD = 3 V to 3.6 V
VDD = 2.7 V
Input Current
IINL or IINH
0.005
2.5
µA typ
µA max
pF typ
VIN = VINL or VINH
0.1
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tON
16
22
13
18
7
ns typ
ns max
ns typ
ns max
ns typ
RL = 50 Ω, CL = 35 pF
VS = 1.5 V, see Figure 18
RL = 50 Ω, CL = 35 pF
VS = 1.5 V, see Figure 18
RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 1.5 V,
see Figure 19
24
20
26
22
tOFF
Break-Before-Make Time Delay, tBBM
1
ns min
pC typ
dB typ
Charge Injection
Off Isolation
30
–64
VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 20
RL = 50 Ω, CL = 5 pF, f = 100 kHz,
see Figure 21
Channel-to-Channel Crosstalk
–64
dB typ
RL = 50 Ω, CL = 5 pF, f = 100 kHz,
see Figure 22
Bandwidth: –3 dB
Insertion Loss
THD + N
38
0.04
0.02
MHz typ
dB typ
%
RL = 50 Ω, CL = 5 pF, see Figure 23
RL = 50 Ω CL = 5 pF, see Figure 23
RL = 32 Ω, f = 20 Hz to 20 kHz,
Vs = 1 V p-p
CS (Off)
CD, CS (On)
55
147
pF typ
pF typ
f = 1 MHz
f = 1 MHz
POWER REQUIREMENTS
VDD = 3.6 V
Digital Inputs = 0 V or 3.6 V
IDD
0.001
µA typ
1.0
µA max
1The temperature range for the Y version is –40°C to +125°C.
2 Guaranteed by design, not subject to production test.
Rev. 0| Page 4 of 12
ADG849
ABSOLUTE MAXIMUM RATINGS
Table 3. TA = 25°C, unless otherwise noted
Table 4. Truth Table
Parameter
Rating
IN
Switch S1
Switch S2
Off
On
VDD to GND
Analog Inputs1
–0.3 V to +7 V
–0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
0
On
1
Off
Digital Inputs
1
–0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
Peak Current, S or D
600 mA (pulsed at 1 ms,
10% duty cycle maximum)
400 mA
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
Continuous Current, S or D
Operating Temperature Range
Extended
Storage Temperature Range
Junction Temperature
SC70 Package
θJA Thermal Impedance
θJC Thermal Impedance
Reflow Soldering
–40°C to +125°C
–65°C to +150°C
+150°C
332°C/W
120°C/W
Peak Temperature
260(0/–5)°C
Time at Peak Temperature
10 sec to 40 sec
1 Overvoltages at IN, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0| Page 5 of 12
ADG849
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
6
5
4
1
2
3
S2
D
IN
ADG849
TOP VIEW
(Not to Scale)
V
DD
S1
GND
Figure 2. Pin Configuration
Table 5. Terminology
Mnemonic
Function
VDD
GND
IDD
Most Positive Power Supply Potential.
Ground (0 V) Reference.
Positive Supply Current.
S
D
IN
Source Terminal. May be an input or output.
Drain Terminal. May be an input or output.
Logic Control Input.
RON
∆RON
RFLAT(ON)
Ohmic Resistance between D and S.
On-Resistance Match Between any Two Channels i.e., RON Maximum to RON Minimum.
Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the
specified analog signal range.
IS (Off)
ID, IS (On)
VD (VS)
VINL
Source Leakage Current with the Switch Off.
Channel Leakage Current with the Switch On.
Analog Voltage on Terminals D, S.
Maximum Input Voltage for Logic 0.
VINH
Minimum Input Voltage for Logic 1.
IINL (IINH
)
Input Current of the Digital Input.
CS (Off)
CD, CS (On)
tON
tOFF
tBBM
Off Switch Source Capacitance. Measured with reference to ground.
On Switch Capacitance. Measured with reference to ground.
Delay time between the 50% and 90% points of the digital input and switch on condition.
Delay time between the 50% and 90% points of the digital input and switch off condition.
On or off time measured between the 80% points of both switches when switching from one to another.
A measure of the glitch impulse transfered from the digital input to the analog output during switching.
Charge
Injection
Crosstalk
A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance.
A measure of unwanted signal coupling through an off switch.
The frequency at which the output is attenuated by 3 dB.
The frequency response of the on switch.
The loss due to the on-resistance of the switch.
Off Isolation
Bandwidth
On-Response
Insertion Loss
THD + N
The ratio of harmonic amplitudes plus the noise of a signal to the fundamental.
Rev. 0| Page 6 of 12
ADG849
TYPICAL PERFORMANCE CHARACTERISTICS
0.6
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
= 25°C
A
0.5
0.4
0.3
0.2
0.1
0
4.5V
5V
+125°C
+85°C
5.5V
+25
°
C
–40
°
C
0.1
0
0
0.5
1.0
1.5
V /V (V)
2.0
2.5
3.0
0
1
2
3
4
5
6
V /V (V)
S
D
S
D
Figure 3. On-Resistance vs. VD/VS, VDD = 5 V 10%
Figure 6. On-Resistance vs. Temperature, VDD = 3 V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
120
V
= 5V
DD
100
80
60
40
20
0
2.5V
2.7V
3V
3.3V
3.6V
I
, I (ON)
S
D
I
(OFF)
S
10
20
40
60
80
100
120
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
TEMPERATURE (°C)
V /V (V)
S
D
Figure 4. On-Resistance vs. VD/VS, VDD = 2.5 V to 3.6 V
Figure 7. Leakage Currents vs. Temperature, VDD = 5 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
90
80
70
60
50
40
30
20
10
0
V
= 3V
DD
+125°C
+85°C
I
, I (ON)
S
D
+25
°
C
–40°C
I
(OFF)
S
0
0.5
1.0
1.5
2.0
2.5
V /V (V)
3.0
3.5
4.0
4.5
5.0
10
20
40
60
80
100
120
TEMPERATURE (°C)
S
D
Figure 5. On-Resistance vs. Temperature, VDD = 5 V
Figure 8. Leakage Currents vs. Temperature, VDD = 3 V
Rev. 0| Page 7 of 12
ADG849
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
250
T
= 25°C
A
V
= 5V
200
150
100
50
DD
V
DD
= 3V
T
V
= 25°C
DD
A
= 5V/3V
0
10k
100k
1M
10M
100M
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
FREQUENCY (MHz)
DRAIN VOLTAGE (V)
Figure 12. Off Isolation vs. Frequency
Figure 9. Charge Injection
20
18
16
14
12
10
8
0
–10
–20
–30
–40
–50
–60
–70
–80
V
= 3.3V
DD
t
ON
t
OFF
V
= 5V
DD
t
ON
t
OFF
6
4
2
T
= 25°C
A
V
= 5V/3V
DD
0
–40
–20
0
20
40
60
80
100
120
10k
100k
1M
10M
100M
FREQUENCY (MHz)
TEMPERATURE (°C)
Figure 13. Crosstalk vs. Frequency
Figure 10. tON/tOFF vs. Temperature
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1
0
V
= 5V
DD
–1
–2
–3
–4
–5
–6
–7
–8
–9
1V p-p
2V p-p
T
V
= 25°C
DD
A
= 5V/3V
20
40
60
80
100
120
140
160
180
200
10k
100k
1M
10M
100M
FREQUENCY (MHz)
FREQUENCY (kHz)
Figure 11. Bandwidth
Figure 14. Total Harmonic Distortion + Noise
Rev. 0| Page 8 of 12
ADG849
TEST CIRCUITS
I
DS
I
(OFF)
I (OFF)
D
S
S
D
I
(ON)
A
D
V1
S
D
V
V
D
S
NC
S
D
V
D
V
S
R
= V1/I
ON
DS
Figure 15. On-Resistance
Figure 17. On-Leakage
Figure 16. Off-Leakage
V
V
DD
DD
0.1µF
S2
S1
V
S
V
50%
50%
OUT
D
V
IN
R
C
L
L
IN
35pF
50Ω
90%
90%
V
OUT
GND
tON
tOFF
Figure 18. Switching Times, tON, tOFF
V
V
DD
DD
0.1µF
50%
50%
0V
V
V
IN
S2
S1
V
S
V
L
OUT
OUT
D
80%
80%
R
C
L
IN
35pF
50Ω
tBBM
tBBM
GND
Figure 19. Break-Before-Make Time Delay, tBBM
V
DD
SW ON
SW OFF
V
V
IN
S2
S1
NC
D
V
S
V
OUT
1nF
IN
OUT
∆V
OUT
GND
Q
= CL × ∆V
OUT
INJ
Figure 20. Charge Injection
Rev. 0| Page 9 of 12
ADG849
V
V
V
DD
DD
DD
0.1µF
0.1µF
NETWORK
ANALYZER
NETWORK
ANALYZER
V
DD
S1
S2
V
OUT
50Ω
S2
S1
R
50Ω
50Ω
L
D
NC
V
S
R
50Ω
D
V
OUT
50Ω
R
L
50Ω
GND
V
S
GND
V
OUT
VS
V
OUT
OFF ISOLATION = 20 LOG
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
V
S
Figure 21. Off Isolation
Figure 22. Channel-to-Channel Crosstalk
V
V
DD
DD
0.1µF
NETWORK
ANALYZER
50Ω
S2
S1
V
S
D
V
OUT
R
L
50Ω
GND
V
WITH SWITCH
OUT
INSERTION LOSS = 20 LOG
V
WITHOUT SWITCH
OUT
Figure 23. Bandwidth
Rev. 0| Page 10 of 12
ADG849
OUTLINE DIMENSIONS
2.00 BSC
6
5
2
4
3
2.10 BSC
1.25 BSC
1
PIN 1
1.30 BSC
0.65 BSC
1.00
0.90
0.70
1.10 MAX
0.22
0.08
0.46
0.36
0.26
8°
4°
0°
0.30
0.15
0.10 MAX
SEATING
PLANE
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203AB
Figure 24. 6-Lead SC70 Package
[KS-6]
Dimensions shown in Millimeters
ORDERING GUIDE
Package
Option
Model
Temperature Range
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
Package Description
Branding1
SNA
SNA
SNA
ADG849YKSZ-500RL72
ADG849YKSZ-REEL2
ADG849YKSZ-REEL72
SC70 (Plastic Surface Mount)
SC70 (Plastic Surface Mount)
SC70 (Plastic Surface Mount)
KS-6
KS-6
KS-6
1 Branding on all packages is limited to three characters due to space constraints.
2 Z = Pb-free part.
Rev. 0| Page 11 of 12
ADG849
NOTES
©
2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D04737-0-7/04(0)
Rev. 0| Page 12 of 12
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