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AP9571GP-HF [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9571GP-HF
型号： AP9571GP-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
文件： 总4页 (文件大小：102K)
中文：  中文翻译
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AP9571GP-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Low On-resistance  
BVDSS  
RDS(ON)  
ID  
-60V  
12.5mΩ  
-105A  
▼ Simple Drive Requirement  
▼ Fast Switching Characteristic  
G
▼ Halogen Free & RoHS Compliant Product  
Description  
AP9571 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
The TO-220 package is widely preferred for all commercial-industrial  
through hole applications. The low thermal resistance and low  
package cost contribute to the worldwide popular package.  
G
TO-220(P)  
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
-105  
A
-67  
A
-300  
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
250  
W
W
oC  
oC  
Total Power Dissipation  
2
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
oC/W  
oC/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
0.5  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
201206141  
AP9571GP-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A  
VGS=0V, ID=-250uA  
-60  
-
-
-
-
V
-
-
12.5 mΩ  
VGS=-4.5V, ID=-20A  
17  
mΩ  
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge  
VDS=VGS, ID=-250uA  
VDS=-10V, ID=-30A  
VDS=-48V, VGS=0V  
VGS= +20V, VDS=0V  
ID=-30A  
-1  
-
-
60  
-
-3  
V
gfs  
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
-25  
-
-
+100  
Qg  
-
63  
11  
37  
12.5  
54  
125  
140  
100  
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
VDS=-48V  
-
-
-
-
-
-
-
VGS=-4.5V  
-
VDS=-30V  
-
ID=-30A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω  
-
VGS=-10V  
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
-
6000 9600  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=-25V  
-
940  
320  
4.3  
-
-
f=1.0MHz  
-
f=1.0MHz  
-
8.6  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Test Conditions  
IS=-30A, VGS=0V  
IS=-10A, VGS=0V,  
dI/dt=-100A/µs  
Min. Typ. Max. Units  
VSD  
trr  
-
-
-
-
-1.3  
V
ns  
nC  
Reverse Recovery Time  
Reverse Recovery Charge  
60  
90  
-
-
Qrr  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9571GP-HF  
200  
160  
120  
80  
320  
240  
160  
80  
T C =150 o C  
-10V  
-7.0V  
-6.0V  
-10V  
T C = 25 o  
C
-7.0V  
-6.0V  
-5.0V  
-5.0V  
V G = -4.0V  
V G = - 4.0V  
40  
0
0
0
4
8
12  
16  
20  
24  
0
4
8
12  
16  
20  
-V DS , Drain-to-Source Voltage (V)  
-V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
15  
14  
13  
12  
11  
10  
9
2.0  
1.6  
1.2  
0.8  
0.4  
I D = -20 A  
I D = - 30 A  
C =25 o C  
V
G = -10V  
T
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
-V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
30  
20  
10  
0
I D = -1mA  
T j =150 o C  
T j =25 o C  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
-V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9571GP-HF  
f=1.0MHz  
10  
10000  
8000  
6000  
4000  
2000  
0
V DS = - 48 V  
I D = - 30 A  
8
C iss  
6
4
2
0
C oss  
C rss  
1
5
9
13  
17  
21  
25  
29  
0
40  
80  
120  
160  
-V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
Operation in this  
area limited by  
100us  
RDS(ON)  
0.2  
0.1  
0.1  
1ms  
0.05  
PDM  
10ms  
t
0.02  
T
100ms  
DC  
0.01  
Duty factor = t/T  
T c =25 o C  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
Single Pulse  
1
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
-V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
100  
80  
60  
40  
20  
0
160  
V DS = -5V  
T j =25 o C  
T j =150 o C  
120  
80  
40  
0
0
1
2
3
4
5
6
25  
50  
75  
100  
125  
150  
T C , Case Temperature ( o C )  
-V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Maximum Continuous Drain  
Current v.s. Case Temperature  
4

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