AP9575AGM-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9575AGM-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9575AGM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
BVDSS
RDS(ON)
ID
-60V
64mΩ
-4.6A
D
D
D
▼ Simple Drive Requirement
D
▼ Fast Switching Characteristic
G
S
▼ RoHS Compliant & Halogen-Free
S
S
SO-8
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
-60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
-4.6
A
-3.6
A
-20
A
PD@TA=25℃
TSTG
Total Power Dissipation
2.5
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
50
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
201012071
AP9575AGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
VGS=0V, ID=-250uA
-60
-
-
-
-
-
V
mΩ
V
64
-3
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
gfs
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
VDS=-10V, ID=-4A
VDS=-48V, VGS=0V
VGS=+20V, VDS=0V
ID=-4A
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-25
-
+100
Qg
12.5
3.5
8
20
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=-30V
VGS=-4.5V
VDS=-30V
-
11
7
-
ID=-1A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
41
28
-
VGS=-10V
-
Ciss
Coss
Crss
Input Capacitance
VGS=0V
970 1550
Output Capacitance
Reverse Transfer Capacitance
VDS=-15V
210
150
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=-1.9A, VGS=0V
IS=-4A, VGS=0V,
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.3
V
35
50
-
-
ns
nC
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9575AGM-HF
60
50
40
30
20
10
0
40
30
20
10
0
-10V
-7.0V
-10V
-7.0V
T A = 25 o
C
T A = 150 o
C
-5.0V
-4.5V
-5.0V
-4.5V
V G = - 4.0V
V G = - 3.0V
0
2
4
6
8
10
0
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
140
120
100
80
2.4
2.0
1.6
1.2
0.8
0.4
I D = - 4 A
I D = - 4 A
V
G =-10V
T
A =25 ℃
Ω
60
40
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
16
12
8
3
2.6
2.2
1.8
1.4
1
T j =150 o C
T j =25 o C
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9575AGM-HF
f=1.0MHz
10
1600
1200
800
400
0
I D = -4A
V
DS = -30V
8
6
4
2
0
C iss
C oss
C rss
0
4
8
12
16
20
24
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor=0.5
0.2
10
Operation in this area
100us
limited by R
DS(ON)
0.1
0.1
1ms
0.05
1
10ms
100ms
1s
0.02
0.01
PDM
0.01
t
T
Single Pulse
0.1
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
T A =25 o C
DC
Single Pulse
0.001
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off)tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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