AP9571GS-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET型号: | AP9571GS-HF |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总4页 (文件大小:102K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP9571GS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Low On-resistance
BVDSS
RDS(ON)
ID
-60V
12.5mΩ
-105A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ Halogen Free & RoHS Compliant Product
Description
AP9571 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
G
D
S
TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
Rating
-60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
-105
A
-67
A
-300
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
Total Power Dissipation3
250
W
W
oC
oC
3.13
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
oC/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
0.5
40
Rthj-a
Data and specifications subject to change without notice
1
201206141
AP9571GS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A
VGS=0V, ID=-250uA
-60
-
-
-
-
V
-
-
12.5 mΩ
VGS=-4.5V, ID=-20A
17
mΩ
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=-250uA
VDS=-10V, ID=-30A
VDS=-48V, VGS=0V
VGS= +20V, VDS=0V
ID=-30A
-1
-
-
60
-
-3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
-25
-
-
+100
Qg
-
63
11
37
12.5
54
125
140
100
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=-48V
-
-
-
-
-
-
-
VGS=-4.5V
-
VDS=-30V
-
ID=-30A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
-
VGS=-10V
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
-
6000 9600
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=-25V
-
940
320
4.3
-
-
f=1.0MHz
-
f=1.0MHz
-
8.6
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=-30A, VGS=0V
IS=-10A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.3
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
60
90
-
-
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9571GS-HF
200
160
120
80
320
240
160
80
T C =150 o C
-10V
-7.0V
-6.0V
-10V
T C = 25 o
C
-7.0V
-6.0V
-5.0V
-5.0V
V G = -4.0V
V G = - 4.0V
40
0
0
0
4
8
12
16
20
24
0
4
8
12
16
20
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
15
14
13
12
11
10
9
2.0
1.6
1.2
0.8
0.4
I D = -20 A
I D = - 30 A
C =25 o C
V
G = -10V
T
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.6
1.2
0.8
0.4
0.0
30
20
10
0
I D = -1mA
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9571GS-HF
f=1.0MHz
10
10000
8000
6000
4000
2000
0
V DS = - 48 V
I D = - 30 A
8
6
4
2
0
C iss
C oss
C rss
1
5
9
13
17
21
25
29
0
40
80
120
160
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
Operation in this
area limited by
100us
RDS(ON)
0.2
0.1
0.1
1ms
0.05
PDM
10ms
t
0.02
T
100ms
DC
0.01
Duty factor = t/T
T c =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
1
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
80
60
40
20
0
160
V DS = -5V
T j =25 o C
T j =150 o C
120
80
40
0
0
1
2
3
4
5
6
25
50
75
100
125
150
T C , Case Temperature ( o C )
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain
Current v.s. Case Temperature
4
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