AP9569GJ-HF [A-POWER]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET
| 型号： | AP9569GJ-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9569GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
-40V
90mΩ
-14A
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
Description
G
D
S
TO-252(H)
TO-251(J)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9569GJ) is
available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
-40
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
-14
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
A
-8.6
-40
A
A
PD@TC=25℃
Total Power Dissipation
26
W
Linear Derating Factor
0.21
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
4.8
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maximum Thermal Resistance, Junction-ambient
Rthj-a
62.5
110
Rthj-a
Data and specifications subject to change without notice
1
201003182
AP9569GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-40
-
-0.03
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A
VGS=-4.5V, ID=-6A
-
-
V/℃
mΩ
RDS(ON)
90
-
-1
-
-
-
130 mΩ
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-10A
VDS=-40V, VGS=0V
-3
V
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=-32V, VGS=0V
7
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
-
-1
-
-
-250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +20V, VDS=0V
ID=-10A
-
-
+100
-
7
12
Qgs
Qgd
td(on)
tr
VDS=-30V
-
2
-
VGS=-4.5V
VDS=-20V
-
4
-
-
8
-
ID=-10A
-
20
19
6
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=2Ω
-
-
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
-
490
80
65
5.8
780
-
VDS=-25V
-
f=1.0MHz
-
-
f=1.0MHz
-
8.7
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=-10A, VGS=0V
IS=-10A, VGS=0V,
dI/dt=-100A/µs
-
-
-
-
-1.3
V
ns
nC
28
26
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9569GH/J-HF
30
20
10
0
30
20
10
0
-10V
-7.0V
-10V
-7.0V
T C = 25 o C
T C = 150 o
C
-5.0V
-4.5V
-5.0V
-4.5V
V G = -3.0 V
V
G = -3.0 V
0
2
4
6
8
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
1.5
1.2
0.9
0.6
260
210
160
110
60
I D =-10A
I D = -6 A
V
G =-10V
T
C =25 ℃
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
4
3
2
1
0
1.6
1.2
0.8
0.4
T j =150 o
C
T j =25 o C
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9569GH/J-HF
f=1.0MHz
C iss
12
1000
100
10
V DS =-30V
I
D =-10A
8
4
0
C oss
C rss
0
4
8
12
16
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
0.2
100us
10
0.1
0.05
PDM
0.1
1ms
10ms
100ms
DC
0.02
t
1
T
0.01
Duty factor = t/T
T c =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
15
10
5
VG
V
DS =-5V
QG
-4.5V
T j =25 o C
T j =150 o C
QGD
QGS
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
相关型号：
AP9575AGH
TRANSISTOR 17 A, 60 V, 0.064 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
A-POWER
AP9575AGH,J-HF
Higher Gate-Source Voltage, Simple Drive Requirement, Fast Switching Characteristic
A-POWER
AP9575AGH-HF
TRANSISTOR 17 A, 60 V, 0.064 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
A-POWER
AP9575AGJ
TRANSISTOR 17 A, 60 V, 0.064 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
A-POWER
AP9575AGJ-HF
TRANSISTOR 17 A, 60 V, 0.064 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
A-POWER
©2020 ICPDF网 联系我们和版权申明