AP9467GJ-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9467GJ-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9467GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
S
BVDSS
RDS(ON)
ID
40V
11mΩ
52A
▼ Single Drive Requirement
▼ Fast Switching Characteristics
▼ RoHS Compliant & Halogen-Free
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G
D
TO-252(H)
S
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9467GJ) are
available for low-profile applications.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
40
Units
VDS
VGS
Drain-Source Voltage
V
V
Gate-Source Voltage
+ 20
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
52
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
33
A
200
A
PD@TC=25℃
Total Power Dissipation
44.6
W
W/℃
W
℃
℃
Linear Derating Factor
Total Power Dissipation3
0.36
PD@TA=25℃
2
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maximum Thermal Resistance, Junction-ambient
2.8
62.5
110
Rthj-a
Rthj-a
Data and specifications subject to change without notice
1
201005314
AP9467GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
VGS=0V, ID=250uA
40
-
-
-
-
-
V
11
20
mΩ
mΩ
VGS=4.5V, ID=20A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= +20V, VDS=0V
ID=30A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
35
-
3
V
gfs
Forward Transconductance
Drain-Source Leakage Current
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
250
IGSS
Qg
-
+100
11
3
29
-
Qgs
Qgd
td(on)
tr
VDS=32V
VGS=4.5V
7
-
VDS=20V
8
-
ID=30A
69
20
6
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.67Ω
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
970 1660
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
185
110
1.8
-
-
f=1.0MHz
f=1.0MHz
3
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=30A, VGS=0V
Min. Typ. Max. Units
VSD
trr
-
-
-
-
1.2
V
IS=20A, VGS=0V,
dI/dt=100A/µs
27
20
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9467GH/J-HF
180
150
120
90
80
60
40
20
0
10V
7.0V
T C =25 o C
T C =150 o C
10V
7.0V
5.0V
4.5V
.
5.0V
4.5V
60
V G =3.0V
30
V G =3.0V
0
0
1
2
3
4
5
0
1
2
3
4
150
150
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
14
12
10
8
2.2
1.8
1.4
1.0
0.6
I D =30A
C =25 o C
I D =30A
T
V
G =10V
Ω
6
2
4
6
8
10
-50
0
50
100
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.4
1.2
1
30
25
20
15
10
5
T j =150 o C
T j =25 o C
0.8
0.6
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9467GH/J-HF
f=1.0MHz
8
1600
1200
800
400
0
I D =30A
6
V DS =32V
C iss
4
2
0
C oss
C rss
0
4
8
12
16
20
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
100
10
1
0.2
0.1
100us
1ms
0.1
0.05
PDM
10ms
100ms
DC
0.02
t
T
0.01
Duty factor = t/T
Single Pulse
T C =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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