AP9467GM [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9467GM |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9467GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
BVDSS
RDS(ON)
ID
40V
11mΩ
12A
D
D
D
▼ Simple Drive Requirement
D
▼ Fast Switching Characteristic
G
S
S
S
SO-8
Description
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
40
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
12
A
10
A
40
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
50
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
200810072
AP9467GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=12A
VGS=0V, ID=250uA
40
-
-
-
-
-
V
11
20
mΩ
mΩ
VGS=4.5V, ID=6A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=12A
VDS=40V, VGS=0V
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24
-
3
V
gfs
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T=70oC) V =32V, V =0V
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1
-
100
j
DS
GS
IGSS
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=+20V
-
+100
Qg
ID=12A
10
3
16
-
Qgs
Qgd
td(on)
tr
VDS=20V
VGS=4.5V
VDS=20V
ID=1A
5
-
7
-
6
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=20Ω
22
10
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
970 1660
VDS=25V
185
110
1.8
-
-
f=1.0MHz
f=1.0MHz
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=2.1A, VGS=0V
IS=12A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
25
21
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9467GM
50
40
30
20
10
0
50
40
30
20
10
0
T A = 25 o
C
T A = 150 o
C
10 V
7.0 V
6.0 V
10 V
7.0 V
6.0 V
5.0 V
5.0 V
V G =4.0V
V G =4.0V
0
1
2
3
4
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.9
1.4
0.9
0.4
I D = 12 A
I D = 6 A
V
G =10V
18
16
14
12
10
8
T
A =25 ℃
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
12
10
8
T j =150 o C
T j =25 o C
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9467GM
f=1.0MHz
8
1600
1200
800
400
0
I
D = 12 A
6
4
2
0
V DS = 20 V
V
DS = 24 V
DS = 32 V
C iss
V
C oss
C rss
0
4
8
12
16
20
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
100us
0.2
10
0.1
0.1
1ms
0.05
10ms
1
0.02
100ms
1s
0.01
PDM
0.01
t
T
0.1
Single Pulse
Duty factor = t/T
T A =25 o C
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
DC
Single Pulse
0.001
0.0001
0.01
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
tr
td(on)
td(off) tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
SYMBOLS
MIN
1.35
0.10
0.33
0.19
4.80
5.80
3.80
NOM
MAX
A
A1
B
c
1.55
1.75
0.25
0.51
0.25
5.00
6.50
4.00
8
7
6
3
5
4
0.18
0.41
E
E1
0.22
D
E
4.90
1
6.15
2
E1
e
3.90
1.27 TYP
0.254 TYP
－
e
G
L
0.38
0.00
0.90
8.00
B
α
4.00
A
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
GM
YWWSSS
WW：Week
SSS：Sequence
5
相关型号：
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