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AP9468GM [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9468GM
型号： AP9468GM
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
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AP9468GM  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low On-resistance  
BVDSS  
RDS(ON)  
ID  
40V  
7mΩ  
14.6A  
D
D
D
▼ Simple Drive Requirement  
D
▼ Fast Switching Characteristic  
G
S
S
S
SO-8  
Description  
D
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
G
S
The SO-8 package is widly preferred for commercial-industrial surface  
mount applications and suited for low voltage applications such as  
DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
± 20  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
14.6  
A
11.7  
A
60  
A
PD@TA=25℃  
Total Power Dissipation  
2.5  
W
Linear Derating Factor  
0.02  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
℃/W  
Data and specifications subject to change without notice  
201015071-1/4  
AP9468GM  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=14A  
VGS=0V, ID=250uA  
40  
-
-
-
-
-
V
7
9
mΩ  
mΩ  
VGS=4.5V, ID=7A  
-
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=14A  
VDS=40V, VGS=0V  
VDS=32V, VGS=0V  
VGS=±20V  
0.5  
-
-
2
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current (T=25oC)  
14  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
10  
j
Drain-Source Leakage Current (T=70oC)  
-
-
100  
j
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
-
±100  
Qg  
ID=14A  
-
32  
4
51  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=32V  
-
VGS=4.5V  
-
16  
10  
7
-
VDS=20V  
-
-
ID=1A  
-
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=20Ω  
-
56  
26  
-
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
-
2235 3580  
VDS=25V  
-
365  
325  
1.8  
-
-
f=1.0MHz  
-
f=1.0MHz  
-
2.7  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=2.1A, VGS=0V  
IS=14A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
33  
33  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.  
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.  
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT  
DEVICE OR SYSTEM ARE NOT AUTHORIZED.  
2/4  
AP9468GM  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
T A = 25 o  
C
T A = 150 o  
C
10V  
7.0V  
5.0V  
10V  
7.0V  
5.0V  
4.5V  
4.5V  
V G =3.0V  
V
G =3.0V  
0
0
1
1
2
2
0
0
1
1
2
2
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
8
7
6
5
1.9  
1.4  
0.9  
0.4  
I D = 14 A  
I D = 7 A  
V
G =10V  
T
A =25 ℃  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
10  
1.6  
1.2  
0.8  
0.4  
0.0  
T j =150 o C  
T j =25 o C  
8
6
4
2
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP9468GM  
f=1.0MHz  
16  
10000  
1000  
100  
I
D = 14 A  
12  
V DS = 20 V  
DS = 24 V  
C iss  
V
V
DS = 32 V  
8
C oss  
C rss  
4
0
0
20  
40  
60  
80  
1
5
9
13  
17  
21  
25  
29  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
100us  
0.2  
10  
0.1  
0.1  
1ms  
0.05  
10ms  
1
0.02  
100ms  
1s  
PDM  
0.01  
0.01  
t
T
0.1  
T A =25 o C  
Single Pulse  
Duty factor = t/T  
Peak Tj = PDM x Rthja + Ta  
Rthja=125oC/W  
DC  
Single Pulse  
0.01  
0.001  
0.0001  
0.01  
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
1000  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Charge  
Q
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4/4  
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : SO-8  
D
Millimeters  
SYMBOLS  
MIN NOM MAX  
1.35 1.55 1.75  
0.10 0.18 0.25  
0.33 0.41 0.51  
0.19 0.22 0.25  
4.80 4.90 5.00  
3.80 3.90 4.00  
5.80 6.15 6.50  
0.38 0.71 1.27  
A
A1  
B
8
7
6
3
5
4
E
C
E1  
D
E1  
E
1
2
L
θ
0
4.00 8.00  
1.27 TYP  
e
e
B
A
A1  
DETAIL A  
θ
L
1.All Dimension Are In Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
c
DETAIL A  
Part Marking Information & Packing : SO-8  
Part Number  
Package Code  
meet Rohs requirement  
9468
GM  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  

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