AP9467AGH [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET型号: | AP9467AGH |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总4页 (文件大小:99K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP9467AGH
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
BVDSS
RDS(ON)
ID
40V
11.5mΩ
43A
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
40
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
ID@TC=25℃
ID@TC=100℃
IDM
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
43
A
27
A
180
A
PD@TC=25℃
TSTG
Total Power Dissipation
39
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
3.2
Rthj-a
62.5
Data & specifications subject to change without notice
1
200905133
AP9467AGH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
VGS=0V, ID=250uA
40
-
-
-
-
-
V
11.5 mΩ
V
GS=4.5V, ID=20A
-
20
mΩ
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=40V, VGS=0V
VGS=+20V, VDS=0V
ID=30A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
38
-
3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
+100
Qg
9.5
2
15
-
Qgs
Qgd
td(on)
tr
VDS=32V
VGS=4.5V
6.5
7
-
VDS=20V
-
ID=30A
64
18
6
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.67Ω
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
660 1060
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
140
85
-
-
f=1.0MHz
f=1.0MHz
2.2
3.3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=30A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
21
14
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9467AGH
120
100
80
60
40
20
0
80
60
40
20
0
T C =25 o C
T C =150 o C
10V
7.0V
6.0V
5.0V
10V
7 .0V
6.0V
5.0 V
V G =4.0V
V G = 4.0 V
0.0
1.0
2.0
3.0
4.0
5.0
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
18
16
14
12
10
8
2.0
1.6
1.2
0.8
0.4
I D =20A
I D =30A
C =25 o C
V
G =10V
T
Ω
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
30
25
20
15
10
5
T j =25 o C
T j =150 o C
0
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9467AGH
f=1.0MHz
10
1000
800
600
400
200
0
8
I D =30A
C iss
V
DS =32V
6
4
2
0
C oss
C rss
0
4
8
12
16
20
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
100
10
1
0.2
0.1
100us
0.1
0.05
PDM
t
1ms
10ms
100ms
DC
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
T C =25 o C
Single Pulse
Single Pulse
0
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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