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AP3303J [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP3303J
型号： AP3303J
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
文件： 总4页 (文件大小：74K)
中文：  中文翻译
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AP3303H/J  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low Gate Charge  
D
BVDSS  
RDS(ON)  
ID  
25V  
25mΩ  
28A  
▼ Simple Drive Requirement  
▼ Fast Switching  
G
S
Description  
G
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP3303J) is available for low-profile applications.  
D
S
TO-252(H)  
TO-251(J)  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
25  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
± 20  
28  
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
18  
A
130  
31  
A
PD@TC=25℃  
Total Power Dissipation  
W
Linear Derating Factor  
0.25  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
4.0  
Unit  
℃/W  
℃/W  
Rthj-case  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-amb  
110  
Data & specifications subject to change without notice  
200811031  
AP3303H/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
25  
-
-
0.02  
-
-
-
V
ΔBVDSS/ΔTj  
RDS(ON)  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=20A  
V/℃  
mΩ  
-
25  
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=20A  
VDS=25V, VGS=0V  
VDS=20V, VGS=0V  
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20  
-
4
-
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current (T=25oC)  
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
1
j
Drain-Source Leakage Current (T=150oC)  
j
-
100  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
V =  
GS  
-
± 20V  
±100  
ID=20A  
14.5  
3
24  
-
Qgs  
Qgd  
td(on)  
tr  
VDS= 20V  
VGS=10V  
VDS=15V  
ID=20A  
8.5  
8.8  
65  
11  
7
-
-
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=0.75Ω  
VGS=0V  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
340  
250  
98  
540  
VDS=25V  
f=1.0MHz  
-
-
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
IS=20A, VGS=0V  
IS=20A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.5  
V
Reverse Recovery Time  
Reverse Recovery Charge  
30.5  
29  
-
-
ns  
nC  
Qrr  
Notes:  
1.Pulse width limited by safe operating area.  
2.Pulse width <300us , duty cycle <2%.  
AP3303H/J  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T c =150 o  
C
T c =25 o C  
10V  
10V  
9.0V  
9.0V  
8.0V  
7.0V  
8.0V  
7.0V  
V G =5.0V  
V G =5.0V  
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
50  
40  
30  
20  
10  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D =8A  
I D = 8 A  
T C =25 o C  
V
G =10V  
Ω
Ω
Ω
Ω
5
6
7
8
9
10  
11  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
100  
5
4.5  
4
10  
1
3.5  
T j =150 o C  
T j =25 o C  
3
0.1  
2.5  
0.01  
2
0
0.4  
0.8  
1.2  
-50  
0
50  
100  
150  
T j ,Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
AP3303H/J  
f=1.0MHz  
10000  
1000  
100  
16  
I D =20A  
14  
V DS =12V  
12  
10  
8
V
V
DS =16V  
DS =20V  
Ciss  
Coss  
6
Crss  
4
2
0
10  
1
5
9
13  
17  
21  
25  
29  
0
4
8
12  
16  
20  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
DUTY=0.5  
0.2  
0.1  
0.1  
0.05  
PDM  
10ms  
0.02  
t
T
0.01  
T c =25 o C  
100ms  
Duty factor = t/T  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
1s  
Single Pulse  
DC  
0.01  
1
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
10V  
QGS  
QGD  
10%  
VGS  
tr  
t
td(on)  
d(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  

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