AP3310J [A-POWER]
P-CHANNEL ENHANCEMENT MODE; P沟道增强模式
| 型号： | AP3310J |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | P-CHANNEL ENHANCEMENT MODE |
| 文件： | 总6页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP3310H/J
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
-20V
150mΩ
-10A
D
S
▼ 2.5V Gate Drive Capability
G
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
This device is suited for low voltage and battery power
applications.
G
D
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
- 20
Units
VDS
VGS
Drain-Source Voltage
V
V
Gate-Source Voltage
± 12
Continuous Drain Current, VGS @ 10V
ID@TA=25℃
ID@TA=100℃
IDM
-10
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
-6.2
A
-24
A
PD@TA=25℃
Total Power Dissipation
25
W
Linear Derating Factor
0.01
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
5.0
Unit
℃/W
℃/W
Rthj-c
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
Data and specifications subject to change without notice
201225023
AP3310H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-20
-
-0.1
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2.8A
150 mΩ
250 mΩ
VGS=-2.5V, ID=-2.0A
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2.8A
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
-
-
-
VGS(th)
gfs
Gate Threshold Voltage
-0.5
-
-
V
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.4
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
j
-1
Drain-Source Leakage Current (T=150oC)
-
-25
j
IGSS
Qg
± 12V
±100
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=
-
ID=-2.8A
VDS=-6V
VGS=-5V
VDS=-6V
ID=-1A
6
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
1.5
0.6
25
60
70
60
300
180
60
td(off)
tf
Turn-off Delay Time
Fall Time
RG=6Ω,VGS=-5V
RD=6Ω
-
-
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=-6V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
A
V
IS
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage2
VD=VG=0V , VS=-1.2V
-
-
-
-
-
-
-10
-24
-1.2
ISM
VSD
Tj=25℃, IS=-10A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP3310H/J
24
18
12
6
20
15
10
5
-4.5V
-4.0V
-3.5V
T C =150 o C
T C =25 o C
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
-3.0V
-2.5V
V
GS = -2.0V
V
GS = -2.0V
0
0
0
2
4
6
8
0.0
2.5
5.0
7.5
10.0
-V DS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
800
600
400
200
0
1.8
1.5
1.2
0.9
0.6
I D = -2.8A
I D = -2.8A
T C =25 ℃
V
GS = -4.5V
Ω
Ω
Ω
Ω
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-VGS (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP3310H/J
10
8
30
25
20
15
10
5
6
4
2
0
0
0
50
100
150
25
50
75
100
125
150
T c , Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
100
10
1
1
Duty Factor = 0.5
0.2
0.1
100us
1ms
0.1
0.05
0.02
PDM
Single Pulse
t
0.01
T
Duty Factor = t/T
10ms
Peak Tj = PDM x Rthjc + TC
T C =25 °C
Single Pulse
100ms
0.01
0.00001
0.0001
0.001
0.01
0.1
1
1
10
100
-VDS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP3310H/J
f=1.0MHz
1000
100
10
5
4
3
2
1
0
I D =-2.8A
DS =-6V
V
Ciss
Coss
Crss
0
2
4
6
8
1
3
5
7
9
11
13
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
10
1.5
T j =150 o C
T j =25 o C
1
0.5
0
1
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
-VSD (V)
T j , Junction Temperature ( o C)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
AP3310H/J
VDS
RD
90%
VDS
TO THE
OSCILLOSCOPE
D
S
0.3 x RATED VDS
RG
G
10%
VGS
VGS
-5 V
td(off)
td(on) tr
tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
S
-5V
0.3 x RATED VDS
QGD
QGS
G
VGS
-1~-3mA
I
ID
G
Q
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
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