AP3310GJ-HF_14 [A-POWER]
Simple Drive Requirement;
| 型号： | AP3310GJ-HF_14 |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Simple Drive Requirement |
| 文件： | 总6页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP3310GH/J-HF
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
-20V
150mΩ
-10A
D
S
▼ 2.5V Gate Drive Capability
▼ Fast Switching Characteristic
G
Description
G
D
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
S
TO-252(H)
This device is suited for low voltage and battery power applications.
G
D
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
- 20
Units
VDS
VGS
Drain-Source Voltage
V
V
Gate-Source Voltage
+12
Continuous Drain Current, VGS @ 4.5V
ID@TC=25℃
ID@TC=100℃
IDM
-10
A
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
-6.2
A
-24
A
PD@TC=25℃
Total Power Dissipation
25
W
Linear Derating Factor
0.01
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
5.0
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maximum Thermal Resistance, Junction-ambient
Rthj-a
62.5
110
Rthj-a
Data and specifications subject to change without notice
1
200902096
AP3310GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-20
-
-0.1
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2.0A
-
-
V/℃
RDS(ON)
150 mΩ
250 mΩ
-
-
-
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2.8A
VDS=-20V, VGS=0V
-0.5
-
V
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.4
-
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=-16V, VGS=0V
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-1
-
-250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=+12V, VDS=0V
ID=-2.8A
-
+100
6
-
-
-
-
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=-6V
1.5
0.6
25
60
70
60
300
180
60
VGS=-5V
VDS=-6V
ID=-1A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=6Ω,VGS=-5V
RD=6Ω
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=-6V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
A
V
IS
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage2
VD=VG=0V , VS=-1.2V
-
-
-
-
-
-
-10
-24
-1.2
ISM
VSD
Tj=25℃, IS=-10A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3310GH/J-HF
24
18
12
6
20
15
10
5
-4.5V
-4.0V
T C =150 o C
T C =25 o C
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
-3.5V
-3.0V
-2.5V
V
GS = -2.0V
V GS = -2.0V
0
0
0.0
2.5
5.0
7.5
10.0
0
2
4
6
8
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
800
600
400
200
0
1.8
I D = -2.8A
T C =25 o C
I D = -2.8A
V
GS = -4.5V
1.5
1.2
0.9
0.6
Ω
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-VGS (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP3310GH/J-HF
10
30
25
20
15
10
5
8
6
4
2
0
0
0
50
100
150
25
50
75
100
125
150
T c , Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
1
100
10
1
Duty Factor = 0.5
0.2
0.1
1ms
0.1
0.05
PDM
t
0.02
T
10ms
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
T C =25 °C
100ms
DC
Single Pulse
Single Pulse
0.01
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
-VDS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
AP3310GH/J-HF
f=1.0MHz
5
4
3
2
1
0
1000
100
10
I D =-2.8A
DS =-6V
V
Ciss
Coss
Crss
1
3
5
7
9
11
13
0
2
4
6
8
Q G , Total Gate Charge (nC)
-VDS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
10
1.5
T j =150 o C
T j =25 o C
1
1
0.5
0
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
T j , Junction Temperature ( o C)
-VSD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
AP3310GH/J-HF
VDS
RD
90%
VDS
TO THE
OSCILLOSCOPE
D
0.3 x RATED VDS
RG
G
10%
VGS
S
VGS
-5 V
td(off)
td(on) tr
tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
S
-5V
0.3 x RATED VDS
QGD
QGS
G
VGS
-1~-3mA
I
ID
G
Q
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
6
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