MBR1040CD [SENO]
10.0A SCHOTTKY BARRIER DIODE;
| 型号： | MBR1040CD |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 10.0A SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
MBR1040CD-MBR10200CD
10.0A SCHOTTKY BARRIER DIODE
Features
!
Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
For Use in Low Voltage Application
Guard Ring Die Construction
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TO-252/DPAK
Plastic Case Material has UL Flammability
Cꢀ lꢀaꢀsꢀsꢀification Rating 94V-O
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Mechanical Data
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Case: TO-252/DPAK, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
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Polarity: See Diagram
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
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Characteristic
Symbol
Units
1050CD 1060CD 1080CD 10100CD 10150CD 10200CD
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
28
45
31
50
35
60
80
56
100
70
150
105
200
140
V
RMS Reverse Voltage
VR(RMS)
IO
42
10.0
V
A
Average Rectified Output Current @TL = 75°C
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
100
FSM
I
A
0.80
280
0.85
0.92
V
Forward Voltage
@IF = 5A
V
FM
0.70
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.1
20
IRM
mA
350
200
pF
°C/W
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
C
j
3
Rꢀ
JA
Tj, TSTG
-55 to +150
-55 to +175
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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MBR1040CD-MBR10200CD
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Alldatasheet
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Zibo Seno Electronic Engineering Co., Ltd.
MBR1040CD-MBR10200CD
RATING AND CHARACTERISTIC CURVES
FIG.2-TYPICAL FORWARD
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
CHARACTERISTICS
12
50
10
8
10
6
4
3.0
2
1.0
0
0
20
40
60
80
100
120
140
160
180
200
Tj=25 C
CASE TEMPERATURE,(°C)
Pulse Width 300us
1% Duty Cycle
0.1
.01
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
.1
.3
.5
.7
.9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
120
90
8.3ms Single Half
Sine Wave
Tj=25 C
60
30
FIG.4 - TYPICAL REVERSE
CHARACTERISTICS
JEDEC method
100
10
20V~45V
0
50V~200V
50
1
5
10
100
NUMBER OF CYCLES AT 60Hz
TJ=100°C
1.0
0.1
TJ=25°C
0.01
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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Alldatasheet
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肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。
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