MBR1040CT [SIRECTIFIER]
肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。; 肖特基势垒二极管肖特基势垒二极管,高结温低漏电流肖特基势垒二极管高TJM低IRRM肖特基势垒二极管, TJ = -65 ° C〜 175 ° C, TJM = 175 ℃。型号: | MBR1040CT |
厂家: | SIRECTIFIER SEMICONDUCTORS |
描述: | 肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。 |
文件: | 总2页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR1030CT thru MBR1045CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AB
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
C
C(TAB)
A
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
A=Anode, C=Cathode, TAB=Cathode
VRRM
V
VRMS
V
VDC
V
MBR1030CT
MBR1035CT
MBR1040CT
MBR1045CT
30
21
30
35
40
45
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
35
24.5
28
40
45
31.5
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
Maximum Average Forward Rectified Current @TC=105oC
10
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
IFSM
125
dv/dt
Voltage Rate Of Change (Rated VR)
10000
V/us
IF=5A @TJ=25oC
Maximum Forward
0.57
0.70
0.84
VF
IF=5A @TJ=125oC
V
Voltage (Note 1)
IF=10A @TJ=125oC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
0.1
15
IR
mA
@TJ=125oC
3.0
oC/W
pF
oC
ROJC
CJ
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
170
-55 to +150
-55 to +175
TJ
TSTG
Storage Temperature Range
oC
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MBR1030CT thru MBR1045CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
16
12
150
125
100
75
8
4
50
RESISTIVE OR
INDUCTIVE LOAD
25
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
0
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
100
T
J
= 125 C
10
1.0
0.1
1.0
0.1
0.01
J
T = 25 C
J
T = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
140
0
20
40
60
80
100
120
0.8
0.9
0.1 0.2
0.3
0.4
0.5
0.6
0.7
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
MBR1030CT ~ MBR1045CT
100
MBR1050CT ~ MBR1060CT
J
T = 25 C, f= 1MHz
10
0.1
1
REVERSE VOLTAGE , VOLTS
100
4
10
相关型号:
MBR1040CT-BP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 40V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
MBR1040CT-BP-HF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 40V V(RRM), Silicon, TO-220AB,
MCC
©2020 ICPDF网 联系我们和版权申明