ZXMN2B14FH [ZETEX]
20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability; SOT23封装的20V N沟道增强型MOSFET具有低栅极驱动能力
| 型号： | ZXMN2B14FH |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability |
| 文件： | 总8页 (文件大小：423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN2B14FH
20V SOT23 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
V
R
(⍀)
I (A)
(BR)DSS
DS(on)
D
0.055 @ V = 4.5V
4.3
3.7
3.2
GS
0.075 @ V = 2.5V
20
GS
0.100 @ V = 1.8V
GS
Description
This new generation of trench MOSFETs from Zetex features low on-
resistance achievable with low gate drive.
Features
D
S
•
•
•
•
Low on-resistance
Fast switching speed
Low gate drive capability
SOT23 package
G
Applications
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
S
D
Ordering information
G
Device
Reel size
(inches)
Tape width Quantity per reel
(mm)
Top view
ZXMN2B14FHTA
7
8
3,000
Device marking
2B4
Issue 2 - March 2007
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ZXMN2B14FH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
20
V
DSS
Gate-source voltage
V
8
4.3
3.5
3.5
21
2.4
21
1
V
A
GS
Continuous drain current
Pulsed drain current (c)
@ V = 4.5V; T
=25°C (b)
=70°C (b)
=25°C (a)
I
GS
amb
amb
amb
D
@ V = 4.5V; T
GS
@ V = 4.5V; T
GS
I
I
A
A
DM
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
I
S
A
SM
Power dissipation at T
=25°C (a)
P
W
amb
D
Linear derating factor
Power dissipation at T
8
mW/°C
W
=25°C (b)
P
1.5
amb
D
Linear derating factor
12
mW/°C
°C
Operating and storage temperature range
T , T
-55 to +150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient
R
125
°C/W
⍜JA
⍜JA
Junction to ambient
R
82
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b)For a device surface mounted on FR4 PCB measured at t Յ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
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ZXMN2B14FH
Thermal characteristics
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ZXMN2B14FH
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage
V
20
V
A
nA
V
I = 250A, V =0V
D GS
(BR)DSS
Zero gate voltage drain current
Gate-body leakage
I
I
1
V
= 20V, V =0V
GS
DSS
DS
GS
100
V
= 8V, V =0V
DS
GSS
Gate-source threshold voltage
Static drain-source on-state
V
R
0.4
1.0
I = 250A, V =V
D DS GS
GS(th)
DS(on)
0.055
0.075
0.100
⍀
V
= 4.5V, I = 3.5A
D
GS
GS
GS
DS
(*)
resistance
⍀
V
V
V
= 2.5V, I = 3A
D
⍀
= 1.8V, I = 2.6A
D
(*) (‡)
g
11
S
= 10V, I = 3.5A
Forward transconductance
fs
D
(‡)
Dynamic
Input capacitance
C
872
145
90
pF
pF
pF
V
= 10V, V =0V
DS GS
iss
f=1MHz
Output capacitance
C
C
oss
rss
Reverse transfer capacitance
(†) (‡)
Switching
Turn-on-delay time
Rise time
t
t
t
t
3.7
5.2
30
ns
ns
ns
ns
nC
nC
nC
V
= 10V, V = 4.5V
DD GS
d(on)
I = 1A
D
r
R ≈ 6.0⍀
G
Turn-off delay time
Fall time
d(off)
f
5.5
11
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Q
Q
Q
V
= 10V, V = 4.5V
DS GS
g
I = 4.0A
D
1.4
2.1
gs
gd
(*)
V
0.69 0.95
V
T =25°C, I = 1.45A,
Diode forward voltage
SD
j
S
V
=0V
GS
(‡)
t
9.4
2.8
ns T =25°C, I = 2.4A,
j F
Reverse recovery time
rr
di/dt=100A/s
(‡)
Q
nC
Reverse recovery charge
rr
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 2 - March 2007
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ZXMN2B14FH
Typical characteristics
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ZXMN2B14FH
Typical characteristics
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VCC
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
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ZXMN2B14FH
Package outline - SOT23
E
e
e1
b
3 leads
D
L1
E1
A
L
c
A1
Dim.
Millimeters
Min. Max.
Inches
Dim.
Millimeters
Inches
Max. Max.
0.075 NOM
Min.
-
Max.
0.044
0.004
0.020
0.008
0.120
Min.
Max.
A
A1
b
-
1.12
0.10
0.50
0.120
3.04
e1
E
1.90 NOM
0.01
0.30
0.085
2.80
0.0004
0.012
0.003
0.110
2.10
1.20
0.25
0.45
-
2.64
1.40
0.62
0.62
-
0.083
0.104
0.055
0.024
0.024
-
E1
L
0.047
0.018
0.018
-
C
D
L1
-
e
0.95 NOM
0.0375 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 2 - March 2007
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ZXMN2B14FH
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
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company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
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For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
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To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
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Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview”
“Active”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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© Zetex Semiconductors plc 2007
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