ZXMN2B14FHTA [TYSEMI]
20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability; SOT23封装的20V N沟道增强型MOSFET具有低栅极驱动能力
| 型号： | ZXMN2B14FHTA |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability |
| 文件： | 总3页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
ZXMN2B14FH
20V SOT23 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
V
R
(⍀)
I (A)
(BR)DSS
DS(on)
D
0.055 @ V = 4.5V
4.3
3.7
3.2
GS
0.075 @ V = 2.5V
20
GS
0.100 @ V = 1.8V
GS
Description
This new generation of trench MOSFETs from TY features low on-
resistance achievable with low gate drive.
Features
D
S
•
•
•
•
Low on-resistance
Fast switching speed
Low gate drive capability
SOT23 package
G
Applications
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
S
D
Ordering information
G
Device
Reel size
(inches)
Tape width Quantity per reel
(mm)
Top view
ZXMN2B14FHTA
7
8
3,000
Device marking
2B4
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Product specification
ZXMN2B14FH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
20
V
DSS
Gate-source voltage
V
8
4.3
3.5
3.5
21
2.4
21
1
V
A
GS
Continuous drain current
Pulsed drain current (c)
@ V = 4.5V; T
=25°C (b)
=70°C (b)
=25°C (a)
I
GS
amb
amb
amb
D
@ V = 4.5V; T
GS
@ V = 4.5V; T
GS
I
I
A
A
DM
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
I
S
A
SM
Power dissipation at T
=25°C (a)
P
W
amb
D
Linear derating factor
Power dissipation at T
8
mW/°C
W
=25°C (b)
P
1.5
amb
D
Linear derating factor
12
mW/°C
°C
Operating and storage temperature range
T , T
-55 to +150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient
R
125
°C/W
⍜JA
⍜JA
Junction to ambient
R
82
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b)For a device surface mounted on FR4 PCB measured at t Յ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
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Product specification
ZXMN2B14FH
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage
V
20
V
A
nA
V
I = 250A, V =0V
D GS
(BR)DSS
Zero gate voltage drain current
Gate-body leakage
I
I
1
V
= 20V, V =0V
GS
DSS
DS
GS
100
V
= 8V, V =0V
DS
GSS
Gate-source threshold voltage
Static drain-source on-state
V
R
0.4
1.0
I = 250A, V =V
D DS GS
GS(th)
DS(on)
0.055
0.075
0.100
⍀
V
= 4.5V, I = 3.5A
D
GS
GS
GS
DS
(*)
resistance
⍀
V
V
V
= 2.5V, I = 3A
D
⍀
= 1.8V, I = 2.6A
D
(*) (‡)
g
11
S
= 10V, I = 3.5A
Forward transconductance
fs
D
(‡)
Dynamic
Input capacitance
C
872
145
90
pF
pF
pF
V
= 10V, V =0V
DS GS
iss
f=1MHz
Output capacitance
C
C
oss
rss
Reverse transfer capacitance
(†) (‡)
Switching
Turn-on-delay time
Rise time
t
t
t
t
3.7
5.2
30
ns
ns
ns
ns
nC
nC
nC
V
= 10V, V = 4.5V
DD GS
d(on)
I = 1A
D
r
R ≈ 6.0⍀
G
Turn-off delay time
Fall time
d(off)
f
5.5
11
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Q
Q
Q
V
= 10V, V = 4.5V
DS GS
g
I = 4.0A
D
1.4
2.1
gs
gd
(*)
V
0.69 0.95
V
T =25°C, I = 1.45A,
Diode forward voltage
SD
j
S
V
=0V
GS
(‡)
t
9.4
2.8
ns T =25°C, I = 2.4A,
j F
Reverse recovery time
rr
di/dt=100A/s
(‡)
Q
nC
Reverse recovery charge
rr
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
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