ZXMN2F34FH [TYSEMI]
20V SOT23 N-channel enhancement mode MOSFET Buck/Boost DC-DC Converters; SOT23封装的20V N沟道增强型MOSFET降压/升压DC- DC转换器
| 型号： | ZXMN2F34FH |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | 20V SOT23 N-channel enhancement mode MOSFET Buck/Boost DC-DC Converters |
| 文件： | 总3页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
ZXMN2F34FH
20V SOT23 N-channel enhancement mode MOSFET
Summary
V
R
(Ω)
I (A)
(BR)DSS
DS(on)
D
20
0.060 @ V = 4.5V
4.0
2.9
GS
0.120 @ V = 2.5V
GS
Description
This new generation Trench MOSFET from TY features low on-
resistance achievable with low (2.5V) gate drive.
Features
D
S
•
•
•
Low on-resistance
2.5V gate drive capability
SOT23 package
G
Applications
•
•
•
Buck/Boost DC-DC Converters
Motor Control
LED Lighting
Ordering information
S
DEVICE
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
D
ZXMN2F34FHTA
7
8
3000
G
Device marking
KNB
Top view
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Product specification
ZXMN2F34FH
Absolute maximum ratings
Parameter
Symbol
V
Limit
Unit
Drain source voltage
20
V
DSS
Gate source voltage
V
12
V
GS
(b)
(b)
(a)
I
4.0
3.3
3.4
A
A
A
Continous Drain Current @ V =4.5; T =25°C
D
GS
A
@ V =4.5; T =70°C
GS
A
@ V =4.5; T =25°C
GS
A
(c)
I
18.6
2.1
A
A
A
Pulsed drain current
DM
(b)
I
Continuous source current (body diode)
S
(c)
I
18.6
Pulsed source current (body diode)
SM
(a)
P
0.95
7.6
W
Power dissipation at T =25°C
D
A
mW/°C
Linear derating factor
(b)
P
1.4
11
W
Power dissipation at T =25°C
D
A
mW/°C
Linear derating factor
Operating and storage temperature range
T , T
-55 to 150
°C
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
131
°C/W
Junction to ambient
⍜JA
(b)
R
89
68
°C/W
°C/W
Junction to ambient
⍜JA
(d)
R
Junction to lead
⍜JL
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b)For a device surface mounted on FR4 PCB measured at t≤ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs - pulse width limited by maximum junction
temperature.
(d)Thermal resistance from junction to solder-point (at end of drain lead).
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Product specification
ZXMN2F34FH
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source Breakdown
Voltage
V
20
V
I = 250μA, V =0V
D GS
(BR)DSS
Zero Gate Voltage Drain
Current
I
I
1
μA
V
= 20V, V =0V
GS
DSS
DS
Gate-Body Leakage
100
1.5
nA
V
V
= 12V, V =0V
DS
GSS
GS
Gate-Source Threshold
Voltage
V
0.5
0.8
7.5
I = 250μA, V =V
D DS GS
GS(th)
Static Drain-Source
On-State Resistance
R
0.060
0.120
Ω
Ω
V
V
= 4.5V, I = 2.5A
DS(on)
GS
GS
D
(*)
= 2.5V, I = 1.0A
D
Forward
Transconductance
g
S
V
= 10V, I = 2.5A
D
fs
DS
(*)(†)
(†)
Dynamic
Input Capacitance
Output Capacitance
C
C
C
277
65
pF
pF
pF
iss
V
= 10V, V =0V
GS
DS
oss
rss
f=1MHz
Reverse Transfer
Capacitance
35
(‡)(†)
Switching
Turn-On-Delay Time
Rise Time
t
t
t
t
2.65
4.2
ns
ns
ns
ns
nC
nC
nC
d(on)
V
= 10V, V = 4.5V
GS
DD
r
I = 1A
D
Turn-Off Delay Time
Fall Time
9.9
d(off)
f
R
≈ 6.0Ω
G
5.1
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Source-drain diode
Q
Q
Q
2.8
V
= 10V, V = 4.5V
DS GS
g
I = 2.5A
D
0.61
0.63
gs
gd
(*)
V
0.73
6.5
1.2
V
I = 1.25A, V =0V
Diode Forward Voltage
SD
S
GS
(†)
o
t
ns
nC
Reverse recovery time
T =25 C, I =1.65A
j F
rr
di/dt=100A/s
(†)
Q
1.4
Reverse recovery charge
rr
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
(†) For design aid only, not subject to production testing.
(‡) Switching characteristics are independent of operating junction temperature.
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