ZXM41N10F [ZETEX]
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET; SOT23封装N沟道增强型垂直ð MOSFET型号: | ZXM41N10F |
厂家: | ZETEX SEMICONDUCTORS |
描述: | SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET |
文件: | 总2页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ZXM41N10F
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
FEATURES
• BVDSS = 100V
• Low Threshold
DEVICE MARKING
• 410
ABSOLUTE MAXIMUM RATINGS
PINOUT TOP VIEW
SOT23
PARAMETER
SYMBOL
VALUE
100
UNIT
Drain-source voltage
Drain-gate voltage
V
V
V
V
DS
100
DGR
Continuous drain current at T
Pulsed drain current
=25°C
I
I
170
mA
mA
V
amb
D
680
DM
Gate-source voltage
V
P
± ±0
GS
tot
Power dissipation at T
=25°C
360
mW
°C
amb
Operating and storage temperature range
T :T
-55 to +150
j
stg
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS
Drain-source breakdown voltage BV
100
0.5
V
I =0.25mA, V =0V
D GS
DSS
Gate-source threshold voltage
Gate-body leakage
V
I
1.5
50
V
I =1mA, V = V
DS GS
D
GS(th)
nA
nA
V
=±20V, V =0V
DS
GSS
DSS
GS
Zero gate voltage drain current
Static drain-source on-state
I
500
V
=100V, V =0V
DS GS
R
8
⍀
⍀
V
V
=4.5V, I =150mA
D
DS(on)
GS
GS
(1)
resistance
12
=3V, I =50mA
D
(1)(2)
Forward transconductance
g
C
C
80
mS
pF
V
=25V, I =100mA
D
fs
DS
(2)
Input capacitance
25
9
iss
oss
Common source output
pF
V
=25V, V =0V, f=1MHz
GS
(2)
DS
capacitance
(2)
Reverse transfer capacitance
C
4
pF
ns
ns
ns
ns
rss
(2)(3)
Turn-on delay time
t
t
t
t
10
10
15
25
d(on)
(2)(3)
Rise time
r
V
≈30V, I =280mA
DD
D
(2)(3)
Turn-off delay time
d(off)
f
(2)(3)
Fall time
NOTES:
(1)
Measured under pulsed conditions. Width=300µs. Duty cycle Յ2% (2) Sample test.
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
(3)
ISSUE 2 - OCTOBER 2006
SEMICONDUCTORS
1
ZXM41N0F
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
Min
Millimeters
Inches
Max
DIM
DIM
Min
2.67
1.20
ᎏ
Max
Max
0.120
0.055
0.043
0.021
Min
0.33
0.01
2.10
0.45
Max
Max
0.020
0.004
0.0985
0.025
A
B
C
D
F
3.05
1.40
1.10
0.53
0.15
0.105
0.047
ᎏ
H
K
0.51
0.10
2.50
0.64
0.013
0.0004
0.083
0.018
L
0.37
0.085
0.015
M
N
⍜
0.0034 0.0059
0.075 NOM
0.95 NOM
10Њ TYP
0.0375 NOM
10Њ TYP
G
1.90 NOM
© Zetex Semiconductors plc 2006
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ISSUE 2 - OCTOBER 2006
SEMICONDUCTORS
2
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